KR102629195B1 - 패키지 구조, 장치, 보드 카드 및 집적회로를 레이아웃하는 방법 - Google Patents
패키지 구조, 장치, 보드 카드 및 집적회로를 레이아웃하는 방법 Download PDFInfo
- Publication number
- KR102629195B1 KR102629195B1 KR1020217042291A KR20217042291A KR102629195B1 KR 102629195 B1 KR102629195 B1 KR 102629195B1 KR 1020217042291 A KR1020217042291 A KR 1020217042291A KR 20217042291 A KR20217042291 A KR 20217042291A KR 102629195 B1 KR102629195 B1 KR 102629195B1
- Authority
- KR
- South Korea
- Prior art keywords
- area
- die
- memory
- chip
- capacitors
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 126
- 230000015654 memory Effects 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 238000000465 moulding Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 150000001875 compounds Chemical class 0.000 description 30
- 238000012545 processing Methods 0.000 description 26
- 238000003860 storage Methods 0.000 description 17
- 238000004891 communication Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 9
- 238000013135 deep learning Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000012858 packaging process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000306 component Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010801 machine learning Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000007418 data mining Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 flux Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000206 moulding compound Substances 0.000 description 1
- 238000003058 natural language processing Methods 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2113/00—Details relating to the application field
- G06F2113/18—Chip packaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10152—Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011053319.2A CN114330201A (zh) | 2020-09-29 | 2020-09-29 | 封装结构、装置、板卡及布局集成电路的方法 |
CN202011053319.2 | 2020-09-29 | ||
PCT/CN2021/114097 WO2022068467A1 (zh) | 2020-09-29 | 2021-08-23 | 封装结构、装置、板卡及布局集成电路的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20220044903A KR20220044903A (ko) | 2022-04-12 |
KR102629195B1 true KR102629195B1 (ko) | 2024-01-24 |
Family
ID=80949583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020217042291A KR102629195B1 (ko) | 2020-09-29 | 2021-08-23 | 패키지 구조, 장치, 보드 카드 및 집적회로를 레이아웃하는 방법 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR102629195B1 (zh) |
CN (1) | CN114330201A (zh) |
TW (1) | TW202213709A (zh) |
WO (1) | WO2022068467A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115794434B (zh) * | 2022-11-18 | 2024-05-24 | 电子科技大学 | 一种基于共享存储的多裸芯集成微系统及多裸芯交互方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6700794B2 (en) * | 2001-07-26 | 2004-03-02 | Harris Corporation | Decoupling capacitor closely coupled with integrated circuit |
WO2014078134A2 (en) * | 2012-11-15 | 2014-05-22 | Amkor Technology, Inc. | Method and system for a semiconductor device package with a die-to-die first bond |
US9806058B2 (en) * | 2015-07-02 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip package having die structures of different heights and method of forming same |
US10141253B2 (en) * | 2016-11-14 | 2018-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US10153222B2 (en) * | 2016-11-14 | 2018-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structures and methods of forming the same |
US20190013283A1 (en) * | 2017-07-10 | 2019-01-10 | Powertech Technology Inc. | Semiconductor package and manufacturing method thereof |
US10978406B2 (en) * | 2017-07-13 | 2021-04-13 | Mediatek Inc. | Semiconductor package including EMI shielding structure and method for forming the same |
CN110473839A (zh) * | 2018-05-11 | 2019-11-19 | 三星电子株式会社 | 半导体封装系统 |
-
2020
- 2020-09-29 CN CN202011053319.2A patent/CN114330201A/zh active Pending
-
2021
- 2021-08-23 KR KR1020217042291A patent/KR102629195B1/ko active IP Right Grant
- 2021-08-23 WO PCT/CN2021/114097 patent/WO2022068467A1/zh active Application Filing
- 2021-08-31 TW TW110132352A patent/TW202213709A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN114330201A (zh) | 2022-04-12 |
KR20220044903A (ko) | 2022-04-12 |
WO2022068467A1 (zh) | 2022-04-07 |
TW202213709A (zh) | 2022-04-01 |
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GRNT | Written decision to grant |