KR102626137B1 - 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 - Google Patents
3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 Download PDFInfo
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- KR102626137B1 KR102626137B1 KR1020227033231A KR20227033231A KR102626137B1 KR 102626137 B1 KR102626137 B1 KR 102626137B1 KR 1020227033231 A KR1020227033231 A KR 1020227033231A KR 20227033231 A KR20227033231 A KR 20227033231A KR 102626137 B1 KR102626137 B1 KR 102626137B1
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- memory
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- thin film
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862625818P | 2018-02-02 | 2018-02-02 | |
| US62/625,818 | 2018-02-02 | ||
| US201862630214P | 2018-02-13 | 2018-02-13 | |
| US62/630,214 | 2018-02-13 | ||
| US16/107,732 | 2018-08-21 | ||
| US16/107,732 US10249370B2 (en) | 2015-09-30 | 2018-08-21 | Three-dimensional vertical NOR flash thing-film transistor strings |
| KR1020207025160A KR102448489B1 (ko) | 2018-02-02 | 2019-01-18 | 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 |
| PCT/US2019/014319 WO2019152226A1 (en) | 2018-02-02 | 2019-01-18 | Three-dimensional vertical nor flash thin-film transistor strings |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207025160A Division KR102448489B1 (ko) | 2018-02-02 | 2019-01-18 | 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220133333A KR20220133333A (ko) | 2022-10-04 |
| KR102626137B1 true KR102626137B1 (ko) | 2024-01-18 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227033231A KR102626137B1 (ko) | 2018-02-02 | 2019-01-18 | 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 |
| KR1020207025160A KR102448489B1 (ko) | 2018-02-02 | 2019-01-18 | 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207025160A KR102448489B1 (ko) | 2018-02-02 | 2019-01-18 | 3-차원 수직 nor 플래시 박막 트랜지스터 스트링들 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP7141462B2 (zh) |
| KR (2) | KR102626137B1 (zh) |
| CN (1) | CN111937147A (zh) |
| WO (1) | WO2019152226A1 (zh) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11251199B2 (en) | 2019-12-09 | 2022-02-15 | Sandisk Technologies Llc | Three-dimensional NOR array including active region pillars and method of making the same |
| US11716855B2 (en) | 2020-05-28 | 2023-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| DE102020132373A1 (de) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | Ferroelektrische speichervorrichtung und deren ausbildungsverfahren |
| KR102602494B1 (ko) * | 2020-05-28 | 2023-11-14 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 3차원 메모리 디바이스 및 방법 |
| US11695073B2 (en) | 2020-05-29 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array gate structures |
| US11710790B2 (en) | 2020-05-29 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array channel regions |
| US11653500B2 (en) * | 2020-06-25 | 2023-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array contact structures |
| US11600520B2 (en) * | 2020-06-26 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air gaps in memory array structures |
| US11444069B2 (en) * | 2020-06-29 | 2022-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | 3D semiconductor package including memory array |
| US11581337B2 (en) * | 2020-06-29 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional memory device and manufacturing method thereof |
| US11640974B2 (en) | 2020-06-30 | 2023-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array isolation structures |
| US11729987B2 (en) | 2020-06-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array source/drain electrode structures |
| US11963363B2 (en) * | 2020-07-14 | 2024-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method for fabricating the same |
| US11903214B2 (en) | 2020-07-16 | 2024-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional ferroelectric random access memory devices and methods of forming |
| US11527553B2 (en) | 2020-07-30 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| US11968833B2 (en) * | 2021-01-15 | 2024-04-23 | Macronix International Co., Ltd. | Memory device with vertically separated channels |
| US11587931B2 (en) | 2021-03-03 | 2023-02-21 | Micron Technology, Inc. | Multiplexor for a semiconductor device |
| US11716856B2 (en) | 2021-03-05 | 2023-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| CN112909012B (zh) * | 2021-03-08 | 2023-09-22 | 中国科学院微电子研究所 | Nor型存储器件及其制造方法及包括存储器件的电子设备 |
| CN117352490A (zh) * | 2022-06-21 | 2024-01-05 | 长鑫存储技术有限公司 | 半导体结构及其制造方法、存储芯片、电子设备 |
| CN114927527B (zh) * | 2022-07-20 | 2022-11-04 | 合肥晶合集成电路股份有限公司 | 闪存器件、存储单元及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010130016A (ja) | 2008-11-25 | 2010-06-10 | Samsung Electronics Co Ltd | ３次元半導体装置及びその動作方法 |
| US20120182801A1 (en) | 2011-01-19 | 2012-07-19 | Macronix International Co., Ltd. | Memory Architecture of 3D NOR Array |
| US20160086970A1 (en) | 2014-09-23 | 2016-03-24 | Haibing Peng | Three-dimensional non-volatile nor-type flash memory |
| US20170092371A1 (en) | 2015-09-30 | 2017-03-30 | Eli Harari | Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays |
| US20170148517A1 (en) | 2015-11-25 | 2017-05-25 | Eli Harari | Three-dimensional vertical nor flash thin film transistor strings |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873004B1 (en) * | 2002-02-04 | 2005-03-29 | Nexflash Technologies, Inc. | Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof |
| KR20080051014A (ko) * | 2006-12-04 | 2008-06-10 | 삼성전자주식회사 | 수직구조를 갖는 앤드형 및 노아형 플래시 메모리 어레이와그 각각의 제조방법 및 동작방법 |
| US7898857B2 (en) * | 2008-03-20 | 2011-03-01 | Micron Technology, Inc. | Memory structure having volatile and non-volatile memory portions |
| JP5354944B2 (ja) | 2008-03-27 | 2013-11-27 | 株式会社東芝 | 半導体装置および電界効果トランジスタ |
| KR20130095499A (ko) * | 2012-02-20 | 2013-08-28 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치, 그 동작 방법 및 그 제조 방법 |
| US9190293B2 (en) * | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
| US9595566B2 (en) * | 2015-02-25 | 2017-03-14 | Sandisk Technologies Llc | Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines |
| US9449701B1 (en) * | 2015-06-30 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile storage systems and methods |
| US9412752B1 (en) * | 2015-09-22 | 2016-08-09 | Macronix International Co., Ltd. | Reference line and bit line structure for 3D memory |
| EP3381036B1 (en) | 2015-11-25 | 2021-07-21 | Sunrise Memory Corporation | Three-dimensional vertical nor flash thin film transistor strings |
-
2019
- 2019-01-18 KR KR1020227033231A patent/KR102626137B1/ko active IP Right Grant
- 2019-01-18 JP JP2020541723A patent/JP7141462B2/ja active Active
- 2019-01-18 KR KR1020207025160A patent/KR102448489B1/ko active IP Right Grant
- 2019-01-18 CN CN201980024463.2A patent/CN111937147A/zh active Pending
- 2019-01-18 WO PCT/US2019/014319 patent/WO2019152226A1/en active Application Filing
-
2022
- 2022-09-09 JP JP2022143443A patent/JP2022172352A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010130016A (ja) | 2008-11-25 | 2010-06-10 | Samsung Electronics Co Ltd | ３次元半導体装置及びその動作方法 |
| US20120182801A1 (en) | 2011-01-19 | 2012-07-19 | Macronix International Co., Ltd. | Memory Architecture of 3D NOR Array |
| US20160086970A1 (en) | 2014-09-23 | 2016-03-24 | Haibing Peng | Three-dimensional non-volatile nor-type flash memory |
| US20170092371A1 (en) | 2015-09-30 | 2017-03-30 | Eli Harari | Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays |
| US20170148517A1 (en) | 2015-11-25 | 2017-05-25 | Eli Harari | Three-dimensional vertical nor flash thin film transistor strings |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021512494A (ja) | 2021-05-13 |
| KR102448489B1 (ko) | 2022-09-30 |
| KR20200112976A (ko) | 2020-10-05 |
| JP2022172352A (ja) | 2022-11-15 |
| KR20220133333A (ko) | 2022-10-04 |
| CN111937147A (zh) | 2020-11-13 |
| JP7141462B2 (ja) | 2022-09-22 |
| WO2019152226A1 (en) | 2019-08-08 |
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