JP7141462B2 - ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング - Google Patents

３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング Download PDF

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Publication number
JP7141462B2
JP7141462B2 JP2020541723A JP2020541723A JP7141462B2 JP 7141462 B2 JP7141462 B2 JP 7141462B2 JP 2020541723 A JP2020541723 A JP 2020541723A JP 2020541723 A JP2020541723 A JP 2020541723A JP 7141462 B2 JP7141462 B2 JP 7141462B2
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memory
memory structure
string
thin film
vertical
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JP2020541723A
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Japanese (ja)
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JP2021512494A (ja
JP2021512494A5 (zh
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ハラリ、エリ
ヤン、ティアンホン
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Sunrise Memory Corp
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Sunrise Memory Corp
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Priority claimed from US16/107,732 external-priority patent/US10249370B2/en
Application filed by Sunrise Memory Corp filed Critical Sunrise Memory Corp
Publication of JP2021512494A publication Critical patent/JP2021512494A/ja
Publication of JP2021512494A5 publication Critical patent/JP2021512494A5/ja
Priority to JP2022143443A priority Critical patent/JP2022172352A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
JP2020541723A 2018-02-02 2019-01-18 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング Active JP7141462B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022143443A JP2022172352A (ja) 2018-02-02 2022-09-09 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201862625818P 2018-02-02 2018-02-02
US62/625,818 2018-02-02
US201862630214P 2018-02-13 2018-02-13
US62/630,214 2018-02-13
US16/107,732 2018-08-21
US16/107,732 US10249370B2 (en) 2015-09-30 2018-08-21 Three-dimensional vertical NOR flash thing-film transistor strings
PCT/US2019/014319 WO2019152226A1 (en) 2018-02-02 2019-01-18 Three-dimensional vertical nor flash thin-film transistor strings

Related Child Applications (1)

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JP2022143443A Division JP2022172352A (ja) 2018-02-02 2022-09-09 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング

Publications (3)

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JP2021512494A JP2021512494A (ja) 2021-05-13
JP2021512494A5 JP2021512494A5 (zh) 2021-11-25
JP7141462B2 true JP7141462B2 (ja) 2022-09-22

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JP2020541723A Active JP7141462B2 (ja) 2018-02-02 2019-01-18 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング
JP2022143443A Pending JP2022172352A (ja) 2018-02-02 2022-09-09 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング

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JP2022143443A Pending JP2022172352A (ja) 2018-02-02 2022-09-09 ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング

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JP (2) JP7141462B2 (zh)
KR (2) KR102626137B1 (zh)
CN (1) CN111937147A (zh)
WO (1) WO2019152226A1 (zh)

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US11251199B2 (en) 2019-12-09 2022-02-15 Sandisk Technologies Llc Three-dimensional NOR array including active region pillars and method of making the same
US11716855B2 (en) 2020-05-28 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
DE102020132373A1 (de) * 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co. Ltd. Ferroelektrische speichervorrichtung und deren ausbildungsverfahren
KR102602494B1 (ko) * 2020-05-28 2023-11-14 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 3차원 메모리 디바이스 및 방법
US11695073B2 (en) 2020-05-29 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array gate structures
US11710790B2 (en) 2020-05-29 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array channel regions
US11653500B2 (en) * 2020-06-25 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array contact structures
US11600520B2 (en) * 2020-06-26 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Air gaps in memory array structures
US11444069B2 (en) * 2020-06-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. 3D semiconductor package including memory array
US11581337B2 (en) * 2020-06-29 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and manufacturing method thereof
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
US11729987B2 (en) 2020-06-30 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array source/drain electrode structures
US11963363B2 (en) * 2020-07-14 2024-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method for fabricating the same
US11903214B2 (en) 2020-07-16 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional ferroelectric random access memory devices and methods of forming
US11527553B2 (en) 2020-07-30 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11968833B2 (en) * 2021-01-15 2024-04-23 Macronix International Co., Ltd. Memory device with vertically separated channels
US11587931B2 (en) 2021-03-03 2023-02-21 Micron Technology, Inc. Multiplexor for a semiconductor device
US11716856B2 (en) 2021-03-05 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
CN112909012B (zh) * 2021-03-08 2023-09-22 中国科学院微电子研究所 Nor型存储器件及其制造方法及包括存储器件的电子设备
CN117352490A (zh) * 2022-06-21 2024-01-05 长鑫存储技术有限公司 半导体结构及其制造方法、存储芯片、电子设备
CN114927527B (zh) * 2022-07-20 2022-11-04 合肥晶合集成电路股份有限公司 闪存器件、存储单元及其制造方法

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US20090242970A1 (en) 2008-03-27 2009-10-01 Kabushiki Kaisha Toshiba Semiconductor device, capacitor, and field effect transistor
US20170148517A1 (en) 2015-11-25 2017-05-25 Eli Harari Three-dimensional vertical nor flash thin film transistor strings
WO2017091338A1 (en) 2015-11-25 2017-06-01 Eli Harari Three-dimensional vertical nor flash thin film transistor strings

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US6873004B1 (en) * 2002-02-04 2005-03-29 Nexflash Technologies, Inc. Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof
KR20080051014A (ko) * 2006-12-04 2008-06-10 삼성전자주식회사 수직구조를 갖는 앤드형 및 노아형 플래시 메모리 어레이와그 각각의 제조방법 및 동작방법
US7898857B2 (en) * 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US8148763B2 (en) * 2008-11-25 2012-04-03 Samsung Electronics Co., Ltd. Three-dimensional semiconductor devices
US8630114B2 (en) * 2011-01-19 2014-01-14 Macronix International Co., Ltd. Memory architecture of 3D NOR array
KR20130095499A (ko) * 2012-02-20 2013-08-28 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 그 동작 방법 및 그 제조 방법
US9190293B2 (en) * 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US10014317B2 (en) * 2014-09-23 2018-07-03 Haibing Peng Three-dimensional non-volatile NOR-type flash memory
US9595566B2 (en) * 2015-02-25 2017-03-14 Sandisk Technologies Llc Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines
US9449701B1 (en) * 2015-06-30 2016-09-20 Sandisk Technologies Llc Non-volatile storage systems and methods
US9412752B1 (en) * 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US10121553B2 (en) * 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US20090242970A1 (en) 2008-03-27 2009-10-01 Kabushiki Kaisha Toshiba Semiconductor device, capacitor, and field effect transistor
JP2009239080A (ja) 2008-03-27 2009-10-15 Toshiba Corp 半導体装置、キャパシタ、および電界効果トランジスタ
US20170148517A1 (en) 2015-11-25 2017-05-25 Eli Harari Three-dimensional vertical nor flash thin film transistor strings
WO2017091338A1 (en) 2015-11-25 2017-06-01 Eli Harari Three-dimensional vertical nor flash thin film transistor strings
JP2019504479A (ja) 2015-11-25 2019-02-14 サンライズ メモリー コーポレイション ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング

Also Published As

Publication number Publication date
JP2021512494A (ja) 2021-05-13
KR102626137B1 (ko) 2024-01-18
KR102448489B1 (ko) 2022-09-30
KR20200112976A (ko) 2020-10-05
JP2022172352A (ja) 2022-11-15
KR20220133333A (ko) 2022-10-04
CN111937147A (zh) 2020-11-13
WO2019152226A1 (en) 2019-08-08

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