KR102621966B1 - 변압기 커플링된 용량성 튜닝 스위칭 (switching) 으로 변압기 커플링된 플라즈마 펄싱하는 (pulsing) 시스템들 및 방법들 - Google Patents
변압기 커플링된 용량성 튜닝 스위칭 (switching) 으로 변압기 커플링된 플라즈마 펄싱하는 (pulsing) 시스템들 및 방법들 Download PDFInfo
- Publication number
- KR102621966B1 KR102621966B1 KR1020207000501A KR20207000501A KR102621966B1 KR 102621966 B1 KR102621966 B1 KR 102621966B1 KR 1020207000501 A KR1020207000501 A KR 1020207000501A KR 20207000501 A KR20207000501 A KR 20207000501A KR 102621966 B1 KR102621966 B1 KR 102621966B1
- Authority
- KR
- South Korea
- Prior art keywords
- frequency
- duty cycle
- pulsing
- variable capacitor
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Polarising Elements (AREA)
- Threshing Machine Elements (AREA)
- Types And Forms Of Lifts (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/617,366 | 2017-06-08 | ||
| US15/617,366 US10734195B2 (en) | 2017-06-08 | 2017-06-08 | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
| PCT/US2018/035026 WO2018226468A1 (en) | 2017-06-08 | 2018-05-30 | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200006180A KR20200006180A (ko) | 2020-01-17 |
| KR102621966B1 true KR102621966B1 (ko) | 2024-01-05 |
Family
ID=64563707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207000501A Active KR102621966B1 (ko) | 2017-06-08 | 2018-05-30 | 변압기 커플링된 용량성 튜닝 스위칭 (switching) 으로 변압기 커플링된 플라즈마 펄싱하는 (pulsing) 시스템들 및 방법들 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10734195B2 (https=) |
| JP (1) | JP7536451B2 (https=) |
| KR (1) | KR102621966B1 (https=) |
| CN (1) | CN110709961B (https=) |
| TW (1) | TWI787276B (https=) |
| WO (1) | WO2018226468A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6976279B2 (ja) * | 2019-03-25 | 2021-12-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
| US11114279B2 (en) | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
| CN112509899B (zh) * | 2019-09-16 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | 电感耦合等离子体处理装置及其点火控制方法 |
| TW202601749A (zh) * | 2020-03-19 | 2026-01-01 | 美商蘭姆研究公司 | 基板處理系統 |
| TW202215485A (zh) * | 2020-06-12 | 2022-04-16 | 美商蘭姆研究公司 | 用於離子損傷減輕及蝕刻均勻度改善之脈動遠程電漿 |
| US12609283B2 (en) * | 2020-06-15 | 2026-04-21 | Lam Research Corporation | Control of pulsing frequencies and duty cycles of parameters of RF signals |
| CN112016676B (zh) * | 2020-08-18 | 2021-07-02 | 武汉大学 | 一种神经网络模型预测的半导体薄膜工艺参数优化系统 |
| KR102852822B1 (ko) * | 2021-05-20 | 2025-09-02 | 인투코어테크놀로지 주식회사 | 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치 |
| US11923175B2 (en) * | 2021-07-28 | 2024-03-05 | COMET Technologies USA, Inc. | Systems and methods for variable gain tuning of matching networks |
| US11715624B2 (en) * | 2021-08-09 | 2023-08-01 | Mks Instruments, Inc. | Adaptive pulse shaping with post match sensor |
| US11621587B1 (en) | 2022-07-18 | 2023-04-04 | Caps Medical Ltd. | Configurable plasma generating system |
| US12389521B2 (en) | 2022-07-18 | 2025-08-12 | Caps Medical Ltd. | Plasma generating system |
| CN119896039A (zh) * | 2022-07-18 | 2025-04-25 | 卡普斯医疗有限公司 | 等离子体生成系统 |
| US20250006478A1 (en) * | 2023-06-28 | 2025-01-02 | Mks Instruments, Inc. | Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method |
| US20250285840A1 (en) * | 2024-03-05 | 2025-09-11 | Applied Materials, Inc. | Rf power splitting and control |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030196757A1 (en) * | 2002-04-19 | 2003-10-23 | Applied Materials, Inc. | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system |
| US20090294061A1 (en) * | 2008-05-29 | 2009-12-03 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power rf generator |
| JP2014195044A (ja) | 2013-01-31 | 2014-10-09 | Lam Research Corporation | プラズマシステムに関連付けられるウェハバイアスを決定するためのモデリングの使用 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100560886B1 (ko) * | 1997-09-17 | 2006-03-13 | 동경 엘렉트론 주식회사 | 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법 |
| JP3310608B2 (ja) * | 1998-01-22 | 2002-08-05 | アプライド マテリアルズ インコーポレイテッド | スパッタリング装置 |
| TW534928B (en) * | 2000-03-31 | 2003-06-01 | Lam Res Corp | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
| EP1689907A4 (en) * | 2003-06-19 | 2008-07-23 | Plasma Control Systems Llc | METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR |
| US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| US20080179948A1 (en) | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
| KR20090017661A (ko) * | 2006-05-31 | 2009-02-18 | 테갈 코퍼레이션 | 반도체 프로세싱을 위한 시스템 및 방법 |
| JP2010238881A (ja) | 2009-03-31 | 2010-10-21 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP5632626B2 (ja) * | 2010-03-04 | 2014-11-26 | 東京エレクトロン株式会社 | 自動整合装置及びプラズマ処理装置 |
| US20120000887A1 (en) * | 2010-06-30 | 2012-01-05 | Kabushiki Kaisha Toshiba | Plasma treatment apparatus and plasma treatment method |
| US20120000888A1 (en) | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Methods and apparatus for radio frequency (rf) plasma processing |
| US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US9059678B2 (en) * | 2011-04-28 | 2015-06-16 | Lam Research Corporation | TCCT match circuit for plasma etch chambers |
| US9966236B2 (en) * | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
| US8692467B2 (en) | 2011-07-06 | 2014-04-08 | Lam Research Corporation | Synchronized and shortened master-slave RF pulsing in a plasma processing chamber |
| US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
| TWI647735B (zh) * | 2013-03-15 | 2019-01-11 | Lam Research Corporation | 使用模型化以建立與電漿系統相關的離子能量 |
| US9053908B2 (en) * | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
| JP6424024B2 (ja) | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| KR101677748B1 (ko) | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| US10332725B2 (en) | 2015-03-30 | 2019-06-25 | Lam Research Corporation | Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network |
| US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US9515633B1 (en) | 2016-01-11 | 2016-12-06 | Lam Research Corporation | Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers |
-
2017
- 2017-06-08 US US15/617,366 patent/US10734195B2/en active Active
-
2018
- 2018-05-30 JP JP2019567599A patent/JP7536451B2/ja active Active
- 2018-05-30 KR KR1020207000501A patent/KR102621966B1/ko active Active
- 2018-05-30 CN CN201880038055.8A patent/CN110709961B/zh active Active
- 2018-05-30 WO PCT/US2018/035026 patent/WO2018226468A1/en not_active Ceased
- 2018-06-04 TW TW107119094A patent/TWI787276B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030196757A1 (en) * | 2002-04-19 | 2003-10-23 | Applied Materials, Inc. | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system |
| US20090294061A1 (en) * | 2008-05-29 | 2009-12-03 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power rf generator |
| JP2014195044A (ja) | 2013-01-31 | 2014-10-09 | Lam Research Corporation | プラズマシステムに関連付けられるウェハバイアスを決定するためのモデリングの使用 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110709961A (zh) | 2020-01-17 |
| US20180358205A1 (en) | 2018-12-13 |
| US10734195B2 (en) | 2020-08-04 |
| WO2018226468A1 (en) | 2018-12-13 |
| CN110709961B (zh) | 2023-02-03 |
| TWI787276B (zh) | 2022-12-21 |
| KR20200006180A (ko) | 2020-01-17 |
| JP7536451B2 (ja) | 2024-08-20 |
| JP2020523739A (ja) | 2020-08-06 |
| TW201909233A (zh) | 2019-03-01 |
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Patent event date: 20200107 Patent event code: PA01051R01D Comment text: International Patent Application |
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Patent event code: PA02012R01D Patent event date: 20210527 Comment text: Request for Examination of Application |
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Comment text: Registration of Establishment Patent event date: 20240103 Patent event code: PR07011E01D |
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