JP7536451B2 - トランス結合容量性同調切り替えを用いたトランス結合プラズマパルス化のためのシステムおよび方法 - Google Patents

トランス結合容量性同調切り替えを用いたトランス結合プラズマパルス化のためのシステムおよび方法 Download PDF

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JP7536451B2
JP7536451B2 JP2019567599A JP2019567599A JP7536451B2 JP 7536451 B2 JP7536451 B2 JP 7536451B2 JP 2019567599 A JP2019567599 A JP 2019567599A JP 2019567599 A JP2019567599 A JP 2019567599A JP 7536451 B2 JP7536451 B2 JP 7536451B2
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frequency
pulsing
duty cycle
processing system
substrate processing
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JPWO2018226468A5 (https=
JP2020523739A5 (https=
JP2020523739A (ja
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ロング・マオリン
パターソン・アレックス
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Polarising Elements (AREA)
  • Threshing Machine Elements (AREA)
  • Types And Forms Of Lifts (AREA)
JP2019567599A 2017-06-08 2018-05-30 トランス結合容量性同調切り替えを用いたトランス結合プラズマパルス化のためのシステムおよび方法 Active JP7536451B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/617,366 2017-06-08
US15/617,366 US10734195B2 (en) 2017-06-08 2017-06-08 Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
PCT/US2018/035026 WO2018226468A1 (en) 2017-06-08 2018-05-30 Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

Publications (4)

Publication Number Publication Date
JP2020523739A JP2020523739A (ja) 2020-08-06
JPWO2018226468A5 JPWO2018226468A5 (https=) 2023-03-14
JP2020523739A5 JP2020523739A5 (https=) 2023-03-14
JP7536451B2 true JP7536451B2 (ja) 2024-08-20

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JP2019567599A Active JP7536451B2 (ja) 2017-06-08 2018-05-30 トランス結合容量性同調切り替えを用いたトランス結合プラズマパルス化のためのシステムおよび方法

Country Status (6)

Country Link
US (1) US10734195B2 (https=)
JP (1) JP7536451B2 (https=)
KR (1) KR102621966B1 (https=)
CN (1) CN110709961B (https=)
TW (1) TWI787276B (https=)
WO (1) WO2018226468A1 (https=)

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US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
CN112509899B (zh) * 2019-09-16 2024-02-09 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置及其点火控制方法
TW202601749A (zh) * 2020-03-19 2026-01-01 美商蘭姆研究公司 基板處理系統
TW202215485A (zh) * 2020-06-12 2022-04-16 美商蘭姆研究公司 用於離子損傷減輕及蝕刻均勻度改善之脈動遠程電漿
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
CN112016676B (zh) * 2020-08-18 2021-07-02 武汉大学 一种神经网络模型预测的半导体薄膜工艺参数优化系统
KR102852822B1 (ko) * 2021-05-20 2025-09-02 인투코어테크놀로지 주식회사 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치
US11923175B2 (en) * 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US11715624B2 (en) * 2021-08-09 2023-08-01 Mks Instruments, Inc. Adaptive pulse shaping with post match sensor
US11621587B1 (en) 2022-07-18 2023-04-04 Caps Medical Ltd. Configurable plasma generating system
US12389521B2 (en) 2022-07-18 2025-08-12 Caps Medical Ltd. Plasma generating system
CN119896039A (zh) * 2022-07-18 2025-04-25 卡普斯医疗有限公司 等离子体生成系统
US20250006478A1 (en) * 2023-06-28 2025-01-02 Mks Instruments, Inc. Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method
US20250285840A1 (en) * 2024-03-05 2025-09-11 Applied Materials, Inc. Rf power splitting and control

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JP2010238881A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
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US20130135058A1 (en) 2011-04-28 2013-05-30 Maolin Long Tcct match circuit for plasma etch chambers
US20130009545A1 (en) 2011-07-06 2013-01-10 Neil Martin Paul Benjamin Synchronized and shortened master-slave rf pulsing in a plasma processing chamber
US20160126069A1 (en) 2014-10-29 2016-05-05 Samsung Electronics Co., Ltd. Pulse plasma apparatus and drive method thereof

Also Published As

Publication number Publication date
CN110709961A (zh) 2020-01-17
KR102621966B1 (ko) 2024-01-05
US20180358205A1 (en) 2018-12-13
US10734195B2 (en) 2020-08-04
WO2018226468A1 (en) 2018-12-13
CN110709961B (zh) 2023-02-03
TWI787276B (zh) 2022-12-21
KR20200006180A (ko) 2020-01-17
JP2020523739A (ja) 2020-08-06
TW201909233A (zh) 2019-03-01

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