CN110709961B - 用变压器耦合电容调谐开关进行变压器耦合等离子体脉冲的系统和方法 - Google Patents

用变压器耦合电容调谐开关进行变压器耦合等离子体脉冲的系统和方法 Download PDF

Info

Publication number
CN110709961B
CN110709961B CN201880038055.8A CN201880038055A CN110709961B CN 110709961 B CN110709961 B CN 110709961B CN 201880038055 A CN201880038055 A CN 201880038055A CN 110709961 B CN110709961 B CN 110709961B
Authority
CN
China
Prior art keywords
frequency
duty cycle
processing system
substrate processing
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880038055.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN110709961A (zh
Inventor
龙茂林
亚历克斯·帕特森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN110709961A publication Critical patent/CN110709961A/zh
Application granted granted Critical
Publication of CN110709961B publication Critical patent/CN110709961B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Polarising Elements (AREA)
  • Threshing Machine Elements (AREA)
  • Types And Forms Of Lifts (AREA)
CN201880038055.8A 2017-06-08 2018-05-30 用变压器耦合电容调谐开关进行变压器耦合等离子体脉冲的系统和方法 Active CN110709961B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/617,366 2017-06-08
US15/617,366 US10734195B2 (en) 2017-06-08 2017-06-08 Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
PCT/US2018/035026 WO2018226468A1 (en) 2017-06-08 2018-05-30 Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

Publications (2)

Publication Number Publication Date
CN110709961A CN110709961A (zh) 2020-01-17
CN110709961B true CN110709961B (zh) 2023-02-03

Family

ID=64563707

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880038055.8A Active CN110709961B (zh) 2017-06-08 2018-05-30 用变压器耦合电容调谐开关进行变压器耦合等离子体脉冲的系统和方法

Country Status (6)

Country Link
US (1) US10734195B2 (https=)
JP (1) JP7536451B2 (https=)
KR (1) KR102621966B1 (https=)
CN (1) CN110709961B (https=)
TW (1) TWI787276B (https=)
WO (1) WO2018226468A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6976279B2 (ja) * 2019-03-25 2021-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
CN112509899B (zh) * 2019-09-16 2024-02-09 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置及其点火控制方法
TW202601749A (zh) * 2020-03-19 2026-01-01 美商蘭姆研究公司 基板處理系統
TW202215485A (zh) * 2020-06-12 2022-04-16 美商蘭姆研究公司 用於離子損傷減輕及蝕刻均勻度改善之脈動遠程電漿
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
CN112016676B (zh) * 2020-08-18 2021-07-02 武汉大学 一种神经网络模型预测的半导体薄膜工艺参数优化系统
KR102852822B1 (ko) * 2021-05-20 2025-09-02 인투코어테크놀로지 주식회사 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치
US11923175B2 (en) * 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US11715624B2 (en) * 2021-08-09 2023-08-01 Mks Instruments, Inc. Adaptive pulse shaping with post match sensor
US11621587B1 (en) 2022-07-18 2023-04-04 Caps Medical Ltd. Configurable plasma generating system
US12389521B2 (en) 2022-07-18 2025-08-12 Caps Medical Ltd. Plasma generating system
CN119896039A (zh) * 2022-07-18 2025-04-25 卡普斯医疗有限公司 等离子体生成系统
US20250006478A1 (en) * 2023-06-28 2025-01-02 Mks Instruments, Inc. Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method
US20250285840A1 (en) * 2024-03-05 2025-09-11 Applied Materials, Inc. Rf power splitting and control

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103930596A (zh) * 2011-11-15 2014-07-16 朗姆研究公司 混合型脉冲等离子体处理系统

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100560886B1 (ko) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법
JP3310608B2 (ja) * 1998-01-22 2002-08-05 アプライド マテリアルズ インコーポレイテッド スパッタリング装置
TW534928B (en) * 2000-03-31 2003-06-01 Lam Res Corp Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
US6818562B2 (en) * 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
EP1689907A4 (en) * 2003-06-19 2008-07-23 Plasma Control Systems Llc METHOD AND DEVICE FOR PRODUCING PLASMA, AND RF ATTACK CIRCUIT WITH ADJUSTABLE USE FACTOR
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US20080179948A1 (en) 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
KR20090017661A (ko) * 2006-05-31 2009-02-18 테갈 코퍼레이션 반도체 프로세싱을 위한 시스템 및 방법
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
JP2010238881A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP5632626B2 (ja) * 2010-03-04 2014-11-26 東京エレクトロン株式会社 自動整合装置及びプラズマ処理装置
US20120000887A1 (en) * 2010-06-30 2012-01-05 Kabushiki Kaisha Toshiba Plasma treatment apparatus and plasma treatment method
US20120000888A1 (en) 2010-06-30 2012-01-05 Applied Materials, Inc. Methods and apparatus for radio frequency (rf) plasma processing
US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9059678B2 (en) * 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
US8692467B2 (en) 2011-07-06 2014-04-08 Lam Research Corporation Synchronized and shortened master-slave RF pulsing in a plasma processing chamber
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
TWI647735B (zh) * 2013-03-15 2019-01-11 Lam Research Corporation 使用模型化以建立與電漿系統相關的離子能量
US9053908B2 (en) * 2013-09-19 2015-06-09 Lam Research Corporation Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
JP6424024B2 (ja) 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US10332725B2 (en) 2015-03-30 2019-06-25 Lam Research Corporation Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9515633B1 (en) 2016-01-11 2016-12-06 Lam Research Corporation Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103930596A (zh) * 2011-11-15 2014-07-16 朗姆研究公司 混合型脉冲等离子体处理系统

Also Published As

Publication number Publication date
CN110709961A (zh) 2020-01-17
KR102621966B1 (ko) 2024-01-05
US20180358205A1 (en) 2018-12-13
US10734195B2 (en) 2020-08-04
WO2018226468A1 (en) 2018-12-13
TWI787276B (zh) 2022-12-21
KR20200006180A (ko) 2020-01-17
JP7536451B2 (ja) 2024-08-20
JP2020523739A (ja) 2020-08-06
TW201909233A (zh) 2019-03-01

Similar Documents

Publication Publication Date Title
CN110709961B (zh) 用变压器耦合电容调谐开关进行变压器耦合等离子体脉冲的系统和方法
CN106960776B (zh) 用于蚀刻室的快速阻抗切换的变压器耦合电容性调谐电路
US10847345B2 (en) Direct drive RF circuit for substrate processing systems
TWI850242B (zh) 基板處理系統及其操作方法
TWI744344B (zh) 基於射頻功率之基板支撐件前饋溫度控制系統及方法
US10879044B2 (en) Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
TW201812829A (zh) 用以控制連續波與脈衝電漿之間的變遷之方法及設備
KR20160117213A (ko) 복수의 출력부 rf 매칭 네트워크의 일 출력부에서 rf 전류 극성을 반전시키기 위한 시스템들 및 방법들
TW202318921A (zh) 用於多頻率、多位準、多狀態脈波之包含rf匹配電路的基板處理系統
US20250273447A1 (en) Protection system for switches in direct drive circuits of substrate processing systems
JP2022552224A (ja) 基板処理システムの基板支持体の発熱体のための電源分離回路
WO2024091796A1 (en) Systems and methods for controlling a pulse width of a square pulse waveform

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant