TWI787276B - 基板處理系統 - Google Patents

基板處理系統 Download PDF

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Publication number
TWI787276B
TWI787276B TW107119094A TW107119094A TWI787276B TW I787276 B TWI787276 B TW I787276B TW 107119094 A TW107119094 A TW 107119094A TW 107119094 A TW107119094 A TW 107119094A TW I787276 B TWI787276 B TW I787276B
Authority
TW
Taiwan
Prior art keywords
frequency
processing system
duty cycle
substrate processing
variable capacitor
Prior art date
Application number
TW107119094A
Other languages
English (en)
Chinese (zh)
Other versions
TW201909233A (zh
Inventor
龍茂林
艾立克斯 派特森
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201909233A publication Critical patent/TW201909233A/zh
Application granted granted Critical
Publication of TWI787276B publication Critical patent/TWI787276B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Polarising Elements (AREA)
  • Threshing Machine Elements (AREA)
  • Types And Forms Of Lifts (AREA)
TW107119094A 2017-06-08 2018-06-04 基板處理系統 TWI787276B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/617,366 2017-06-08
US15/617,366 US10734195B2 (en) 2017-06-08 2017-06-08 Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

Publications (2)

Publication Number Publication Date
TW201909233A TW201909233A (zh) 2019-03-01
TWI787276B true TWI787276B (zh) 2022-12-21

Family

ID=64563707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107119094A TWI787276B (zh) 2017-06-08 2018-06-04 基板處理系統

Country Status (6)

Country Link
US (1) US10734195B2 (https=)
JP (1) JP7536451B2 (https=)
KR (1) KR102621966B1 (https=)
CN (1) CN110709961B (https=)
TW (1) TWI787276B (https=)
WO (1) WO2018226468A1 (https=)

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JP6976279B2 (ja) * 2019-03-25 2021-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
CN112509899B (zh) * 2019-09-16 2024-02-09 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置及其点火控制方法
TW202601749A (zh) * 2020-03-19 2026-01-01 美商蘭姆研究公司 基板處理系統
TW202215485A (zh) * 2020-06-12 2022-04-16 美商蘭姆研究公司 用於離子損傷減輕及蝕刻均勻度改善之脈動遠程電漿
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
CN112016676B (zh) * 2020-08-18 2021-07-02 武汉大学 一种神经网络模型预测的半导体薄膜工艺参数优化系统
KR102852822B1 (ko) * 2021-05-20 2025-09-02 인투코어테크놀로지 주식회사 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치
US11923175B2 (en) * 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US11715624B2 (en) * 2021-08-09 2023-08-01 Mks Instruments, Inc. Adaptive pulse shaping with post match sensor
US11621587B1 (en) 2022-07-18 2023-04-04 Caps Medical Ltd. Configurable plasma generating system
US12389521B2 (en) 2022-07-18 2025-08-12 Caps Medical Ltd. Plasma generating system
CN119896039A (zh) * 2022-07-18 2025-04-25 卡普斯医疗有限公司 等离子体生成系统
US20250006478A1 (en) * 2023-06-28 2025-01-02 Mks Instruments, Inc. Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method
US20250285840A1 (en) * 2024-03-05 2025-09-11 Applied Materials, Inc. Rf power splitting and control

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TW200307989A (en) * 2002-04-19 2003-12-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
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KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
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CN1299226C (zh) * 1997-09-17 2007-02-07 东京电子株式会社 用于监视和控制气体等离子体处理的系统和方法
TW534928B (en) * 2000-03-31 2003-06-01 Lam Res Corp Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
TW200307989A (en) * 2002-04-19 2003-12-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US20120000888A1 (en) * 2010-06-30 2012-01-05 Applied Materials, Inc. Methods and apparatus for radio frequency (rf) plasma processing
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Also Published As

Publication number Publication date
CN110709961A (zh) 2020-01-17
KR102621966B1 (ko) 2024-01-05
US20180358205A1 (en) 2018-12-13
US10734195B2 (en) 2020-08-04
WO2018226468A1 (en) 2018-12-13
CN110709961B (zh) 2023-02-03
KR20200006180A (ko) 2020-01-17
JP7536451B2 (ja) 2024-08-20
JP2020523739A (ja) 2020-08-06
TW201909233A (zh) 2019-03-01

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