KR102607646B1 - 오버레이 측정을 위한 지형 위상 제어 - Google Patents

오버레이 측정을 위한 지형 위상 제어 Download PDF

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KR102607646B1
KR102607646B1 KR1020217038910A KR20217038910A KR102607646B1 KR 102607646 B1 KR102607646 B1 KR 102607646B1 KR 1020217038910 A KR1020217038910 A KR 1020217038910A KR 20217038910 A KR20217038910 A KR 20217038910A KR 102607646 B1 KR102607646 B1 KR 102607646B1
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optical system
target
imaging
illumination
metrology tool
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KR20210149886A (ko
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블라디미르 레빈스키
유리 파스코버
암논 마나센
요니 샬리보
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32—Fiducial marks and measuring scales within the optical system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Theoretical Computer Science (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
KR1020217038910A 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어 Active KR102607646B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562163783P 2015-05-19 2015-05-19
US62/163,783 2015-05-19
US201562222724P 2015-09-23 2015-09-23
US62/222,724 2015-09-23
KR1020177036236A KR102334168B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
PCT/US2016/033353 WO2016187468A1 (en) 2015-05-19 2016-05-19 Topographic phase control for overlay measurement

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177036236A Division KR102334168B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어

Publications (2)

Publication Number Publication Date
KR20210149886A KR20210149886A (ko) 2021-12-09
KR102607646B1 true KR102607646B1 (ko) 2023-11-29

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KR1020217038910A Active KR102607646B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
KR1020217038903A Active KR102665579B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
KR1020177036236A Active KR102334168B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
KR1020217038906A Active KR102678955B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어

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KR1020217038903A Active KR102665579B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
KR1020177036236A Active KR102334168B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어
KR1020217038906A Active KR102678955B1 (ko) 2015-05-19 2016-05-19 오버레이 측정을 위한 지형 위상 제어

Country Status (7)

Country Link
US (5) US10520832B2 (https=)
JP (4) JP6879939B2 (https=)
KR (4) KR102607646B1 (https=)
CN (4) CN112859540B (https=)
SG (3) SG10201912822UA (https=)
TW (4) TWI715582B (https=)
WO (1) WO2016187468A1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112859540B (zh) * 2015-05-19 2024-10-18 科磊股份有限公司 成像计量目标及方法
US9989806B2 (en) * 2015-09-10 2018-06-05 Samsung Display Co., Ltd. Color conversion panel and display device including the same
KR102393740B1 (ko) * 2015-12-08 2022-05-02 케이엘에이 코포레이션 편광 타겟 및 편광 조명을 사용한 회절 차수의 진폭 및 위상의 제어
JP7179742B2 (ja) 2017-02-10 2022-11-29 ケーエルエー コーポレイション 散乱計測オーバーレイターゲット及び方法
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
EP3454123A1 (en) * 2017-09-06 2019-03-13 ASML Netherlands B.V. Metrology method and apparatus
EP3499312A1 (en) * 2017-12-15 2019-06-19 ASML Netherlands B.V. Metrology apparatus and a method of determining a characteristic of interest
KR102648880B1 (ko) * 2017-11-07 2024-03-15 에이에스엠엘 네델란즈 비.브이. 관심 특성을 결정하는 계측 장치 및 방법
US11085754B2 (en) 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
EP3521929A1 (en) * 2018-02-02 2019-08-07 ASML Netherlands B.V. Method of determining an optimal focus height for a metrology apparatus
WO2019166190A1 (en) * 2018-02-27 2019-09-06 Stichting Vu Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
WO2019182637A1 (en) * 2018-03-19 2019-09-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
US10622238B2 (en) * 2018-06-07 2020-04-14 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
US11281111B2 (en) 2018-08-28 2022-03-22 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
US12130246B2 (en) * 2018-12-31 2024-10-29 Asml Netherlands B.V. Method for overlay metrology and apparatus thereof
JP7254217B2 (ja) 2019-02-14 2023-04-07 ケーエルエー コーポレイション 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法
WO2020190318A1 (en) * 2019-03-21 2020-09-24 Kla Corporation Parameter-stable misregistration measurement amelioration in semiconductor devices
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
KR102825815B1 (ko) * 2020-06-18 2025-06-27 삼성전자주식회사 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치
CN112465694B (zh) * 2020-11-27 2024-10-15 中国科学院西安光学精密机械研究所 基于相位变化的医学图像数据增广方法
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
KR20240018489A (ko) * 2021-06-09 2024-02-13 에이에스엠엘 네델란즈 비.브이. 애퍼처 아포디제이션을 갖는 구조적 조명을 이용한 레티클 입자 검출을 위한 검사 시스템
CN113467033A (zh) * 2021-06-24 2021-10-01 南昌欧菲光电技术有限公司 一种摄像头模组及其透镜的定位方法
CN113777731A (zh) * 2021-08-11 2021-12-10 中国工程物理研究院应用电子学研究所 一种共轴反转环型连续变密度衰减器装置及其工作方法
CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置
KR102874693B1 (ko) * 2023-08-17 2025-10-29 (주) 오로스테크놀로지 이미지 기반 오버레이 시스템에서 위상 이미지 획득 장치 및 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040233440A1 (en) 2003-02-22 2004-11-25 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
US20140060148A1 (en) 2012-09-05 2014-03-06 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
US20140111791A1 (en) 2012-10-19 2014-04-24 Kla-Tencor Corporation Phase characterization of targets
US20150043803A1 (en) 2013-08-08 2015-02-12 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US5666197A (en) * 1996-08-21 1997-09-09 Polaroid Corporation Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography
JPH10284370A (ja) * 1997-04-03 1998-10-23 Nikon Corp 焦点位置検出装置及び該装置を備えた投影露光装置
JP2001307975A (ja) * 2000-02-18 2001-11-02 Nikon Corp 荷電粒子線露光装置及び半導体デバイスの製造方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP2002170760A (ja) * 2000-12-01 2002-06-14 Nikon Corp 荷電粒子ビーム露光装置、荷電粒子ビーム露光方法及びデバイス製造方法
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
US6794671B2 (en) * 2002-07-17 2004-09-21 Particle Sizing Systems, Inc. Sensors and methods for high-sensitivity optical particle counting and sizing
WO2004053426A1 (en) * 2002-12-05 2004-06-24 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7230704B2 (en) * 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
JP4734261B2 (ja) * 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション 連続変化するオフセットマークと、オーバレイ決定方法
DE102005006724A1 (de) * 2004-10-20 2006-08-10 Universität Stuttgart Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten
DE102006016131A1 (de) * 2005-09-22 2007-03-29 Robert Bosch Gmbh Interferometrische Messvorrichtung
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
JP2009523574A (ja) * 2006-01-18 2009-06-25 ザ ジェネラル ホスピタル コーポレイション １つ又は複数の内視鏡顕微鏡検査法を使用してデータを生成するシステム及び方法
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
DE102006021557B3 (de) * 2006-05-08 2007-07-12 Carl Mahr Holding Gmbh Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
KR20100014357A (ko) * 2007-04-12 2010-02-10 가부시키가이샤 니콘 계측 방법, 노광 방법 및 디바이스 제조 방법
JP4966724B2 (ja) * 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
WO2008134378A1 (en) * 2007-04-26 2008-11-06 Kla-Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
US7869022B2 (en) * 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
US20090034071A1 (en) * 2007-07-31 2009-02-05 Dean Jennings Method for partitioning and incoherently summing a coherent beam
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US9239455B2 (en) * 2007-12-31 2016-01-19 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP5319978B2 (ja) * 2008-07-28 2013-10-16 株式会社日立メディアエレクトロニクス 光ピックアップ装置、光ディスク装置および回折格子
US8531648B2 (en) * 2008-09-22 2013-09-10 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
JP5361322B2 (ja) * 2008-10-14 2013-12-04 キヤノン株式会社 露光装置及びデバイスの製造方法
DE102009044151B4 (de) * 2009-05-19 2012-03-29 Kla-Tencor Mie Gmbh Vorrichtung zur optischen Waferinspektion
JP5545782B2 (ja) * 2009-07-31 2014-07-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置の焦点測定方法、散乱計、リソグラフィシステム、およびリソグラフィセル
CN101699265A (zh) * 2009-10-28 2010-04-28 上海理工大学 动态偏振光散射颗粒测量装置及测量方法
US8896832B2 (en) 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
KR101793538B1 (ko) 2010-07-19 2017-11-03 에이에스엠엘 네델란즈 비.브이. 오버레이 오차를 결정하는 장치 및 방법
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
US9104120B2 (en) * 2011-02-10 2015-08-11 Kla-Tencor Corporation Structured illumination for contrast enhancement in overlay metrology
US20120224183A1 (en) * 2011-03-02 2012-09-06 Zygo Corporation Interferometric metrology of surfaces, films and underresolved structures
JP5731063B2 (ja) * 2011-04-08 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法
US8582114B2 (en) 2011-08-15 2013-11-12 Kla-Tencor Corporation Overlay metrology by pupil phase analysis
EP2841875A4 (en) * 2012-04-23 2016-01-20 Univ Ben Gurion HIGH-RESOLUTION OPTICAL FULL-FIELD COHERENCE TOMOGRAPHY WITH GENUINE SPECTROSCOPIC DOUBLE MODE USING LIQUID CRYSTAL DEVICES
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9875946B2 (en) * 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
CN103411557B (zh) * 2013-08-15 2016-02-03 哈尔滨工业大学 阵列照明的角谱扫描准共焦环形微结构测量装置与方法
WO2015113724A1 (en) * 2014-02-03 2015-08-06 Asml Netherlands B.V. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
WO2015124397A1 (en) * 2014-02-21 2015-08-27 Asml Netherlands B.V. Optimization of target arrangement and associated target
KR102345196B1 (ko) * 2014-04-07 2021-12-29 노바 메주어링 인스트루먼츠 엘티디. 광학 위상 측정 방법 및 시스템
US20150355098A1 (en) * 2014-05-06 2015-12-10 California Institute Of Technology Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals
CN112698551B (zh) 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
CN112859540B (zh) * 2015-05-19 2024-10-18 科磊股份有限公司 成像计量目标及方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040233440A1 (en) 2003-02-22 2004-11-25 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
US20140060148A1 (en) 2012-09-05 2014-03-06 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
US20140111791A1 (en) 2012-10-19 2014-04-24 Kla-Tencor Corporation Phase characterization of targets
US20150043803A1 (en) 2013-08-08 2015-02-12 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods

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