KR102590634B1 - 하전 입자 빔 장치, 시료 가공 방법 - Google Patents
하전 입자 빔 장치, 시료 가공 방법 Download PDFInfo
- Publication number
- KR102590634B1 KR102590634B1 KR1020180034692A KR20180034692A KR102590634B1 KR 102590634 B1 KR102590634 B1 KR 102590634B1 KR 1020180034692 A KR1020180034692 A KR 1020180034692A KR 20180034692 A KR20180034692 A KR 20180034692A KR 102590634 B1 KR102590634 B1 KR 102590634B1
- Authority
- KR
- South Korea
- Prior art keywords
- sample
- charged particle
- particle beam
- processing
- inclined portion
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 94
- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000012545 processing Methods 0.000 claims abstract description 74
- 230000001678 irradiating effect Effects 0.000 claims abstract description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 51
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 49
- 229910052786 argon Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 20
- 238000001878 scanning electron micrograph Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 description 51
- 238000010894 electron beam technology Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 18
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000003754 machining Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 150000001485 argon Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
- G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2017-060907 | 2017-03-27 | ||
| JP2017060907A JP6974820B2 (ja) | 2017-03-27 | 2017-03-27 | 荷電粒子ビーム装置、試料加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180109734A KR20180109734A (ko) | 2018-10-08 |
| KR102590634B1 true KR102590634B1 (ko) | 2023-10-17 |
Family
ID=63782290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180034692A KR102590634B1 (ko) | 2017-03-27 | 2018-03-26 | 하전 입자 빔 장치, 시료 가공 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6974820B2 (ja) |
| KR (1) | KR102590634B1 (ja) |
| CN (1) | CN108666196B (ja) |
| TW (1) | TWI768001B (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102677678B1 (ko) * | 2017-09-25 | 2024-06-21 | 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. | 깊이 제어 가능한 이온 밀링 |
| JP7152757B2 (ja) * | 2018-10-18 | 2022-10-13 | 株式会社日立ハイテクサイエンス | 試料加工観察方法 |
| JP7360871B2 (ja) * | 2019-09-24 | 2023-10-13 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム照射装置、及び制御方法 |
| CN111366428B (zh) * | 2020-03-03 | 2023-06-09 | 上海华力集成电路制造有限公司 | Fib倒切制备tem样品的方法 |
| JPWO2023084773A1 (ja) * | 2021-11-15 | 2023-05-19 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020151A1 (ja) | 2007-08-08 | 2009-02-12 | Sii Nanotechnology Inc. | 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法 |
| JP2014225362A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社日立ハイテクノロジーズ | 集束イオンビーム装置、集束イオンビーム装置を用いた試料加工方法、及び試料加工プログラム |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318468A (ja) * | 1994-05-25 | 1995-12-08 | Hitachi Ltd | 電子顕微鏡観察用試料の作製方法 |
| JP2992682B2 (ja) | 1996-11-26 | 1999-12-20 | セイコーインスツルメンツ株式会社 | 集積回路の断面観察方法 |
| JP5039961B2 (ja) | 2007-04-24 | 2012-10-03 | エスアイアイ・ナノテクノロジー株式会社 | 三次元画像構築方法 |
| JP5352335B2 (ja) * | 2009-04-28 | 2013-11-27 | 株式会社日立ハイテクノロジーズ | 複合荷電粒子線装置 |
| CN102023108B (zh) * | 2009-09-23 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | 透射电子显微镜样品的制备方法 |
| JP2011154920A (ja) * | 2010-01-28 | 2011-08-11 | Hitachi High-Technologies Corp | イオンミリング装置，試料加工方法，加工装置、および試料駆動機構 |
| DE102010032894B4 (de) * | 2010-07-30 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Tem-Lamelle, Verfahren zu ihrer Herstellung und Vorrichtung zum Ausführen des Verfahrens |
| JP2011203266A (ja) * | 2011-05-27 | 2011-10-13 | Sii Nanotechnology Inc | 薄片試料作製方法 |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| JP6105204B2 (ja) * | 2012-02-10 | 2017-03-29 | 株式会社日立ハイテクサイエンス | Ｔｅｍ観察用試料作製方法 |
| JP5887247B2 (ja) * | 2012-10-15 | 2016-03-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置および試料作製法 |
| DE102012020478A1 (de) * | 2012-10-18 | 2014-05-08 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlsystem und Verfahren zum Bearbeiten einer TEM-Probe |
| US9057670B2 (en) * | 2013-05-30 | 2015-06-16 | International Business Machines Corporation | Transmission electron microscope sample fabrication |
| JP6240754B2 (ja) * | 2014-05-09 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | 試料加工方法、及び荷電粒子線装置 |
| KR102358551B1 (ko) * | 2014-08-29 | 2022-02-04 | 가부시키가이샤 히다치 하이테크 사이언스 | 자동 시료편 제작 장치 |
| US9620333B2 (en) * | 2014-08-29 | 2017-04-11 | Hitachi High-Tech Science Corporation | Charged particle beam apparatus |
| US9679743B2 (en) * | 2015-02-23 | 2017-06-13 | Hitachi High-Tech Science Corporation | Sample processing evaluation apparatus |
-
2017
- 2017-03-27 JP JP2017060907A patent/JP6974820B2/ja active Active
-
2018
- 2018-03-05 TW TW107107249A patent/TWI768001B/zh active
- 2018-03-22 CN CN201810239287.1A patent/CN108666196B/zh active Active
- 2018-03-26 KR KR1020180034692A patent/KR102590634B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020151A1 (ja) | 2007-08-08 | 2009-02-12 | Sii Nanotechnology Inc. | 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法 |
| JP2015043343A (ja) * | 2007-08-08 | 2015-03-05 | 株式会社日立ハイテクサイエンス | 複合集束イオンビーム装置 |
| JP2014225362A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社日立ハイテクノロジーズ | 集束イオンビーム装置、集束イオンビーム装置を用いた試料加工方法、及び試料加工プログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6974820B2 (ja) | 2021-12-01 |
| TW201835964A (zh) | 2018-10-01 |
| CN108666196B (zh) | 2022-03-29 |
| KR20180109734A (ko) | 2018-10-08 |
| TWI768001B (zh) | 2022-06-21 |
| JP2018163826A (ja) | 2018-10-18 |
| CN108666196A (zh) | 2018-10-16 |
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| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |