KR102580293B1 - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

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Publication number
KR102580293B1
KR102580293B1 KR1020160001028A KR20160001028A KR102580293B1 KR 102580293 B1 KR102580293 B1 KR 102580293B1 KR 1020160001028 A KR1020160001028 A KR 1020160001028A KR 20160001028 A KR20160001028 A KR 20160001028A KR 102580293 B1 KR102580293 B1 KR 102580293B1
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KR
South Korea
Prior art keywords
area
region
unit magnets
sputtering device
magnetic field
Prior art date
Application number
KR1020160001028A
Other languages
English (en)
Korean (ko)
Other versions
KR20170082185A (ko
Inventor
이동희
신상원
Original Assignee
삼성디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020160001028A priority Critical patent/KR102580293B1/ko
Priority to CN201710006470.2A priority patent/CN106939412B/zh
Publication of KR20170082185A publication Critical patent/KR20170082185A/ko
Application granted granted Critical
Publication of KR102580293B1 publication Critical patent/KR102580293B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020160001028A 2016-01-05 2016-01-05 스퍼터링 장치 KR102580293B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160001028A KR102580293B1 (ko) 2016-01-05 2016-01-05 스퍼터링 장치
CN201710006470.2A CN106939412B (zh) 2016-01-05 2017-01-05 溅射装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160001028A KR102580293B1 (ko) 2016-01-05 2016-01-05 스퍼터링 장치

Publications (2)

Publication Number Publication Date
KR20170082185A KR20170082185A (ko) 2017-07-14
KR102580293B1 true KR102580293B1 (ko) 2023-09-19

Family

ID=59358729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160001028A KR102580293B1 (ko) 2016-01-05 2016-01-05 스퍼터링 장치

Country Status (2)

Country Link
KR (1) KR102580293B1 (zh)
CN (1) CN106939412B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106481B (zh) * 2019-06-06 2021-01-26 京东方科技集团股份有限公司 镀膜装置及物理气相沉积设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2954407B2 (ja) 1990-11-30 1999-09-27 株式会社日立製作所 薄膜形成方法
KR100369276B1 (ko) * 2000-09-05 2003-01-24 아이티엠 주식회사 마그네트론 스퍼터링 장치의 타겟 표면에 형성되는 자기장위치를 가변시켜 다양한 화합물 박막 조성을 얻는 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268869A (ja) * 1988-04-20 1989-10-26 Fuji Photo Film Co Ltd スパッタリング装置
JP3403550B2 (ja) * 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法
JP4562818B2 (ja) * 1997-02-14 2010-10-13 パナソニック株式会社 人工格子多層膜の着膜装置
US20020046945A1 (en) * 1999-10-28 2002-04-25 Applied Materials, Inc. High performance magnetron for DC sputtering systems
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
KR20090131453A (ko) * 2008-06-18 2009-12-29 주식회사 엔씰텍 스퍼터링 장치 및 이를 구비하는 멀티 챔버
JP4551490B2 (ja) * 2008-08-18 2010-09-29 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP5702143B2 (ja) * 2008-08-28 2015-04-15 株式会社イー・エム・ディー スパッタリング薄膜形成装置
JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2954407B2 (ja) 1990-11-30 1999-09-27 株式会社日立製作所 薄膜形成方法
KR100369276B1 (ko) * 2000-09-05 2003-01-24 아이티엠 주식회사 마그네트론 스퍼터링 장치의 타겟 표면에 형성되는 자기장위치를 가변시켜 다양한 화합물 박막 조성을 얻는 방법

Also Published As

Publication number Publication date
CN106939412A (zh) 2017-07-11
KR20170082185A (ko) 2017-07-14
CN106939412B (zh) 2021-01-22

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