KR102579792B1 - 보상 회로를 갖는 이진 가중 감쇠기 - Google Patents

보상 회로를 갖는 이진 가중 감쇠기 Download PDF

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KR102579792B1
KR102579792B1 KR1020197008830A KR20197008830A KR102579792B1 KR 102579792 B1 KR102579792 B1 KR 102579792B1 KR 1020197008830 A KR1020197008830 A KR 1020197008830A KR 20197008830 A KR20197008830 A KR 20197008830A KR 102579792 B1 KR102579792 B1 KR 102579792B1
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South Korea
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attenuation
circuit
attenuator
capacitance
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Korean (ko)
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KR20190052012A (ko
Inventor
얀 얀
준형 이
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스카이워크스 솔루션즈, 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/54—Modifications of networks to reduce influence of variations of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Circuits Of Receivers In General (AREA)
KR1020197008830A 2016-08-30 2017-08-28 보상 회로를 갖는 이진 가중 감쇠기 Active KR102579792B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662381376P 2016-08-30 2016-08-30
US62/381,376 2016-08-30
PCT/US2017/048917 WO2018044799A1 (en) 2016-08-30 2017-08-28 Binary-weighted attenuator having compensation circuit

Publications (2)

Publication Number Publication Date
KR20190052012A KR20190052012A (ko) 2019-05-15
KR102579792B1 true KR102579792B1 (ko) 2023-09-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197008830A Active KR102579792B1 (ko) 2016-08-30 2017-08-28 보상 회로를 갖는 이진 가중 감쇠기

Country Status (9)

Country Link
US (1) US20180062622A1 (enExample)
JP (2) JP2019532596A (enExample)
KR (1) KR102579792B1 (enExample)
CN (1) CN109964407B (enExample)
DE (1) DE112017004354T5 (enExample)
GB (1) GB2576804A (enExample)
SG (1) SG11201901793XA (enExample)
TW (1) TWI801349B (enExample)
WO (1) WO2018044799A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340892B2 (en) * 2017-08-22 2019-07-02 Psemi Corporation Multi-channel digital step attenuator architecture
JP6452917B1 (ja) * 2018-03-29 2019-01-16 三菱電機株式会社 切替回路及び可変減衰器
KR102059817B1 (ko) * 2018-05-25 2019-12-27 삼성전기주식회사 증폭 이득 가변에 따른 위상 왜곡을 보상하는 가변이득 저잡음 증폭장치
US11088668B2 (en) * 2019-02-14 2021-08-10 Psemi Corporation LNA with controlled phase bypass
IL271075B2 (en) * 2019-12-01 2023-11-01 Rafael Advanced Defense Systems Ltd Very wide film damper with small phase change and improved stability against temperature change
CN111464145B (zh) * 2020-04-07 2023-04-25 成都仕芯半导体有限公司 一种数字步进衰减器
CN112653422B (zh) * 2020-11-30 2022-11-25 北京无线电测量研究所 一种数控衰减器芯片
CN113691236B (zh) * 2021-08-04 2023-08-22 国仪量子(合肥)技术有限公司 温度补偿宽带信号衰减电路及其控制方法
US12250015B2 (en) * 2021-09-07 2025-03-11 Analog Devices International Unlimited Company Front-end for receivers with RF sampling ADCS
CN114337564A (zh) * 2022-01-07 2022-04-12 深圳昂瑞微电子技术有限公司 低噪声放大器
US12136920B2 (en) * 2022-03-01 2024-11-05 Qualcomm Incorporated Current-mode radio frequency attenuators
US20240243732A1 (en) * 2023-01-18 2024-07-18 Mediatek Inc. Multi-level digital step attenuator and digital step attenuation device
CN120825148A (zh) * 2025-09-19 2025-10-21 中国科学技术大学 一种数控电流模衰减器及其模块与芯片

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060244548A1 (en) 2003-06-27 2006-11-02 Rohde & Schwarz Gmbh & Co. Kg Attenuator system
US20150326204A1 (en) 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with small output glitch

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684881A (en) * 1986-09-17 1987-08-04 Tektronix, Inc. Low impedance switched attenuator
US5666089A (en) * 1996-04-12 1997-09-09 Hewlett-Packard Company Monolithic step attenuator having internal frequency compensation
JP4214710B2 (ja) * 2002-04-15 2009-01-28 三菱電機株式会社 可変減衰器
EP1450479B1 (en) * 2003-02-20 2012-03-28 Sony Ericsson Mobile Communications AB Efficient modulation of RF signals
US8059705B2 (en) * 2007-02-16 2011-11-15 Applied Micro Circuits Corporation Channel equalization using frequency and phase compensation
EP2190116B1 (en) * 2007-08-11 2018-03-21 Yantel Corporation Variable attenuator
JP5692813B2 (ja) * 2008-11-18 2015-04-01 フリースケール セミコンダクター インコーポレイテッド 位相補償のための集積回路、通信ユニット、および方法
US8386986B2 (en) * 2009-12-23 2013-02-26 Rf Micro Devices, Inc. Temperature controlled attenuator
JP2011182048A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 可変減衰器
US8452187B2 (en) * 2010-12-02 2013-05-28 Eastern Optx Inc. Bi-directional, compact, multi-path and free space channel replicator
JP2012129721A (ja) * 2010-12-14 2012-07-05 Mitsubishi Electric Corp 可変減衰器
US9100046B2 (en) * 2011-08-17 2015-08-04 Rf Micro Devices, Inc. Digital step attenuator utilizing thermometer encoded multi-bit attenuator stages
US8779870B2 (en) * 2011-10-05 2014-07-15 International Business Machines Corporation Low phase variation CMOS digital attenuator
KR101351248B1 (ko) * 2012-03-09 2014-01-15 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
WO2013178271A1 (en) * 2012-05-31 2013-12-05 Advantest (Singapore) Pte. Ltd. Variable attenuator
JP2014096725A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp ベクトル合成形移相器
CN103050976B (zh) * 2013-01-11 2015-02-18 山西省电力公司大同供电分公司 输电线路抑制系统次同步谐振的可控串补装置
US9397635B2 (en) * 2013-11-19 2016-07-19 Peregrine Semiconductor Corporation Segmented attenuator with glitch reduction
US9473194B2 (en) * 2014-02-27 2016-10-18 Skywoods Solutions, Inc. Systems, devices and methods related to radio-frequency step attenuators
US9847804B2 (en) * 2014-04-30 2017-12-19 Skyworks Solutions, Inc. Bypass path loss reduction
US9584096B2 (en) * 2014-05-09 2017-02-28 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with low phase shift
US9548722B2 (en) * 2014-10-22 2017-01-17 Analog Devices Global Apparatus and methods for reducing glitches in digital step attenuators
US9444432B2 (en) * 2014-11-11 2016-09-13 Peregrine Semiconductor Corporation Digital step attenuator with reduced relative phase error
US9531359B1 (en) * 2015-10-08 2016-12-27 Peregrine Semiconductor Corporation Multi-state attenuator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060244548A1 (en) 2003-06-27 2006-11-02 Rohde & Schwarz Gmbh & Co. Kg Attenuator system
US20150326204A1 (en) 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with small output glitch

Also Published As

Publication number Publication date
CN109964407B (zh) 2024-03-08
US20180062622A1 (en) 2018-03-01
CN109964407A (zh) 2019-07-02
SG11201901793XA (en) 2019-03-28
GB2576804A (en) 2020-03-04
TW201813292A (zh) 2018-04-01
JP2019532596A (ja) 2019-11-07
WO2018044799A1 (en) 2018-03-08
GB201904324D0 (en) 2019-05-15
JP7387783B2 (ja) 2023-11-28
DE112017004354T5 (de) 2019-05-16
TWI801349B (zh) 2023-05-11
KR20190052012A (ko) 2019-05-15
JP2022088429A (ja) 2022-06-14

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