CN109964407B - 具有补偿电路的二进制加权衰减器 - Google Patents

具有补偿电路的二进制加权衰减器 Download PDF

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Publication number
CN109964407B
CN109964407B CN201780064950.2A CN201780064950A CN109964407B CN 109964407 B CN109964407 B CN 109964407B CN 201780064950 A CN201780064950 A CN 201780064950A CN 109964407 B CN109964407 B CN 109964407B
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China
Prior art keywords
attenuation
global
circuit
attenuator
phase
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CN201780064950.2A
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Chinese (zh)
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CN109964407A (zh
Inventor
颜燕
J·李
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/54—Modifications of networks to reduce influence of variations of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Circuits Of Receivers In General (AREA)
CN201780064950.2A 2016-08-30 2017-08-28 具有补偿电路的二进制加权衰减器 Active CN109964407B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662381376P 2016-08-30 2016-08-30
US62/381,376 2016-08-30
PCT/US2017/048917 WO2018044799A1 (en) 2016-08-30 2017-08-28 Binary-weighted attenuator having compensation circuit

Publications (2)

Publication Number Publication Date
CN109964407A CN109964407A (zh) 2019-07-02
CN109964407B true CN109964407B (zh) 2024-03-08

Family

ID=61240763

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780064950.2A Active CN109964407B (zh) 2016-08-30 2017-08-28 具有补偿电路的二进制加权衰减器

Country Status (9)

Country Link
US (1) US20180062622A1 (enExample)
JP (2) JP2019532596A (enExample)
KR (1) KR102579792B1 (enExample)
CN (1) CN109964407B (enExample)
DE (1) DE112017004354T5 (enExample)
GB (1) GB2576804A (enExample)
SG (1) SG11201901793XA (enExample)
TW (1) TWI801349B (enExample)
WO (1) WO2018044799A1 (enExample)

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US10340892B2 (en) * 2017-08-22 2019-07-02 Psemi Corporation Multi-channel digital step attenuator architecture
JP6452917B1 (ja) * 2018-03-29 2019-01-16 三菱電機株式会社 切替回路及び可変減衰器
KR102059817B1 (ko) * 2018-05-25 2019-12-27 삼성전기주식회사 증폭 이득 가변에 따른 위상 왜곡을 보상하는 가변이득 저잡음 증폭장치
US11088668B2 (en) * 2019-02-14 2021-08-10 Psemi Corporation LNA with controlled phase bypass
IL271075B2 (en) * 2019-12-01 2023-11-01 Rafael Advanced Defense Systems Ltd Very wide film damper with small phase change and improved stability against temperature change
CN111464145B (zh) * 2020-04-07 2023-04-25 成都仕芯半导体有限公司 一种数字步进衰减器
CN112653422B (zh) * 2020-11-30 2022-11-25 北京无线电测量研究所 一种数控衰减器芯片
CN113691236B (zh) * 2021-08-04 2023-08-22 国仪量子(合肥)技术有限公司 温度补偿宽带信号衰减电路及其控制方法
US12250015B2 (en) * 2021-09-07 2025-03-11 Analog Devices International Unlimited Company Front-end for receivers with RF sampling ADCS
CN114337564A (zh) * 2022-01-07 2022-04-12 深圳昂瑞微电子技术有限公司 低噪声放大器
US12136920B2 (en) * 2022-03-01 2024-11-05 Qualcomm Incorporated Current-mode radio frequency attenuators
US20240243732A1 (en) * 2023-01-18 2024-07-18 Mediatek Inc. Multi-level digital step attenuator and digital step attenuation device
CN120825148A (zh) * 2025-09-19 2025-10-21 中国科学技术大学 一种数控电流模衰减器及其模块与芯片

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CN103050976A (zh) * 2013-01-11 2013-04-17 山西省电力公司大同供电分公司 输电线路抑制系统次同步谐振的可控串补装置
KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
CN104953983A (zh) * 2014-02-27 2015-09-30 天工方案公司 与射频步阶衰减器有关的系统、设备和方法

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KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
CN103050976A (zh) * 2013-01-11 2013-04-17 山西省电力公司大同供电分公司 输电线路抑制系统次同步谐振的可控串补装置
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Also Published As

Publication number Publication date
US20180062622A1 (en) 2018-03-01
CN109964407A (zh) 2019-07-02
SG11201901793XA (en) 2019-03-28
GB2576804A (en) 2020-03-04
TW201813292A (zh) 2018-04-01
JP2019532596A (ja) 2019-11-07
WO2018044799A1 (en) 2018-03-08
GB201904324D0 (en) 2019-05-15
JP7387783B2 (ja) 2023-11-28
DE112017004354T5 (de) 2019-05-16
TWI801349B (zh) 2023-05-11
KR102579792B1 (ko) 2023-09-19
KR20190052012A (ko) 2019-05-15
JP2022088429A (ja) 2022-06-14

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