JP2019532596A - 補償回路を有する２進重み付け減衰器 - Google Patents

補償回路を有する２進重み付け減衰器 Download PDF

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Publication number
JP2019532596A
JP2019532596A JP2019531561A JP2019531561A JP2019532596A JP 2019532596 A JP2019532596 A JP 2019532596A JP 2019531561 A JP2019531561 A JP 2019531561A JP 2019531561 A JP2019531561 A JP 2019531561A JP 2019532596 A JP2019532596 A JP 2019532596A
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JP
Japan
Prior art keywords
attenuation
circuit
attenuator
attenuator circuit
global
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Pending
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JP2019531561A
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English (en)
Japanese (ja)
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JP2019532596A5 (enExample
Inventor
ヤン ヤン、
ヤン ヤン、
ジュンヒョン イ、
ジュンヒョン イ、
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Skyworks Solutions Inc
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Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of JP2019532596A publication Critical patent/JP2019532596A/ja
Publication of JP2019532596A5 publication Critical patent/JP2019532596A5/ja
Priority to JP2022036073A priority Critical patent/JP7387783B2/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/54—Modifications of networks to reduce influence of variations of temperature
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Circuits Of Receivers In General (AREA)
JP2019531561A 2016-08-30 2017-08-28 補償回路を有する２進重み付け減衰器 Pending JP2019532596A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022036073A JP7387783B2 (ja) 2016-08-30 2022-03-09 無線周波数の減衰器回路、無線周波数モジュール及び無線デバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662381376P 2016-08-30 2016-08-30
US62/381,376 2016-08-30
PCT/US2017/048917 WO2018044799A1 (en) 2016-08-30 2017-08-28 Binary-weighted attenuator having compensation circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022036073A Division JP7387783B2 (ja) 2016-08-30 2022-03-09 無線周波数の減衰器回路、無線周波数モジュール及び無線デバイス

Publications (2)

Publication Number Publication Date
JP2019532596A true JP2019532596A (ja) 2019-11-07
JP2019532596A5 JP2019532596A5 (enExample) 2020-10-08

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JP2019531561A Pending JP2019532596A (ja) 2016-08-30 2017-08-28 補償回路を有する２進重み付け減衰器
JP2022036073A Active JP7387783B2 (ja) 2016-08-30 2022-03-09 無線周波数の減衰器回路、無線周波数モジュール及び無線デバイス

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Country Status (9)

Country Link
US (1) US20180062622A1 (enExample)
JP (2) JP2019532596A (enExample)
KR (1) KR102579792B1 (enExample)
CN (1) CN109964407B (enExample)
DE (1) DE112017004354T5 (enExample)
GB (1) GB2576804A (enExample)
SG (1) SG11201901793XA (enExample)
TW (1) TWI801349B (enExample)
WO (1) WO2018044799A1 (enExample)

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US10340892B2 (en) * 2017-08-22 2019-07-02 Psemi Corporation Multi-channel digital step attenuator architecture
JP6452917B1 (ja) * 2018-03-29 2019-01-16 三菱電機株式会社 切替回路及び可変減衰器
KR102059817B1 (ko) * 2018-05-25 2019-12-27 삼성전기주식회사 증폭 이득 가변에 따른 위상 왜곡을 보상하는 가변이득 저잡음 증폭장치
US11088668B2 (en) * 2019-02-14 2021-08-10 Psemi Corporation LNA with controlled phase bypass
IL271075B2 (en) * 2019-12-01 2023-11-01 Rafael Advanced Defense Systems Ltd Very wide film damper with small phase change and improved stability against temperature change
CN111464145B (zh) * 2020-04-07 2023-04-25 成都仕芯半导体有限公司 一种数字步进衰减器
CN112653422B (zh) * 2020-11-30 2022-11-25 北京无线电测量研究所 一种数控衰减器芯片
CN113691236B (zh) * 2021-08-04 2023-08-22 国仪量子(合肥)技术有限公司 温度补偿宽带信号衰减电路及其控制方法
US12250015B2 (en) * 2021-09-07 2025-03-11 Analog Devices International Unlimited Company Front-end for receivers with RF sampling ADCS
CN114337564A (zh) * 2022-01-07 2022-04-12 深圳昂瑞微电子技术有限公司 低噪声放大器
US12136920B2 (en) * 2022-03-01 2024-11-05 Qualcomm Incorporated Current-mode radio frequency attenuators
US20240243732A1 (en) * 2023-01-18 2024-07-18 Mediatek Inc. Multi-level digital step attenuator and digital step attenuation device
CN120825148A (zh) * 2025-09-19 2025-10-21 中国科学技术大学 一种数控电流模衰减器及其模块与芯片

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JP2011182048A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 可変減衰器
KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
JP2014096725A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp ベクトル合成形移相器

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US4684881A (en) * 1986-09-17 1987-08-04 Tektronix, Inc. Low impedance switched attenuator
US5666089A (en) * 1996-04-12 1997-09-09 Hewlett-Packard Company Monolithic step attenuator having internal frequency compensation
EP1450479B1 (en) * 2003-02-20 2012-03-28 Sony Ericsson Mobile Communications AB Efficient modulation of RF signals
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JP2003309454A (ja) * 2002-04-15 2003-10-31 Mitsubishi Electric Corp 可変減衰器
JP2011182048A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 可変減衰器
KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
JP2014096725A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp ベクトル合成形移相器

Also Published As

Publication number Publication date
CN109964407B (zh) 2024-03-08
US20180062622A1 (en) 2018-03-01
CN109964407A (zh) 2019-07-02
SG11201901793XA (en) 2019-03-28
GB2576804A (en) 2020-03-04
TW201813292A (zh) 2018-04-01
WO2018044799A1 (en) 2018-03-08
GB201904324D0 (en) 2019-05-15
JP7387783B2 (ja) 2023-11-28
DE112017004354T5 (de) 2019-05-16
TWI801349B (zh) 2023-05-11
KR102579792B1 (ko) 2023-09-19
KR20190052012A (ko) 2019-05-15
JP2022088429A (ja) 2022-06-14

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