TWI801349B - 具有補償電路之二進制加權衰減器 - Google Patents

具有補償電路之二進制加權衰減器 Download PDF

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Publication number
TWI801349B
TWI801349B TW106129592A TW106129592A TWI801349B TW I801349 B TWI801349 B TW I801349B TW 106129592 A TW106129592 A TW 106129592A TW 106129592 A TW106129592 A TW 106129592A TW I801349 B TWI801349 B TW I801349B
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TW
Taiwan
Prior art keywords
attenuation
global
circuit
attenuator
bypass
Prior art date
Application number
TW106129592A
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English (en)
Chinese (zh)
Other versions
TW201813292A (zh
Inventor
顏燕
俊勇 李
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美商天工方案公司
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Application filed by 美商天工方案公司 filed Critical 美商天工方案公司
Publication of TW201813292A publication Critical patent/TW201813292A/zh
Application granted granted Critical
Publication of TWI801349B publication Critical patent/TWI801349B/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/54—Modifications of networks to reduce influence of variations of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Circuits Of Receivers In General (AREA)
TW106129592A 2016-08-30 2017-08-30 具有補償電路之二進制加權衰減器 TWI801349B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381376P 2016-08-30 2016-08-30
US62/381,376 2016-08-30

Publications (2)

Publication Number Publication Date
TW201813292A TW201813292A (zh) 2018-04-01
TWI801349B true TWI801349B (zh) 2023-05-11

Family

ID=61240763

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106129592A TWI801349B (zh) 2016-08-30 2017-08-30 具有補償電路之二進制加權衰減器

Country Status (9)

Country Link
US (1) US20180062622A1 (enExample)
JP (2) JP2019532596A (enExample)
KR (1) KR102579792B1 (enExample)
CN (1) CN109964407B (enExample)
DE (1) DE112017004354T5 (enExample)
GB (1) GB2576804A (enExample)
SG (1) SG11201901793XA (enExample)
TW (1) TWI801349B (enExample)
WO (1) WO2018044799A1 (enExample)

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US10340892B2 (en) * 2017-08-22 2019-07-02 Psemi Corporation Multi-channel digital step attenuator architecture
JP6452917B1 (ja) * 2018-03-29 2019-01-16 三菱電機株式会社 切替回路及び可変減衰器
KR102059817B1 (ko) * 2018-05-25 2019-12-27 삼성전기주식회사 증폭 이득 가변에 따른 위상 왜곡을 보상하는 가변이득 저잡음 증폭장치
US11088668B2 (en) * 2019-02-14 2021-08-10 Psemi Corporation LNA with controlled phase bypass
IL271075B2 (en) * 2019-12-01 2023-11-01 Rafael Advanced Defense Systems Ltd Very wide film damper with small phase change and improved stability against temperature change
CN111464145B (zh) * 2020-04-07 2023-04-25 成都仕芯半导体有限公司 一种数字步进衰减器
CN112653422B (zh) * 2020-11-30 2022-11-25 北京无线电测量研究所 一种数控衰减器芯片
CN113691236B (zh) * 2021-08-04 2023-08-22 国仪量子(合肥)技术有限公司 温度补偿宽带信号衰减电路及其控制方法
US12250015B2 (en) * 2021-09-07 2025-03-11 Analog Devices International Unlimited Company Front-end for receivers with RF sampling ADCS
CN114337564A (zh) * 2022-01-07 2022-04-12 深圳昂瑞微电子技术有限公司 低噪声放大器
US12136920B2 (en) * 2022-03-01 2024-11-05 Qualcomm Incorporated Current-mode radio frequency attenuators
US20240243732A1 (en) * 2023-01-18 2024-07-18 Mediatek Inc. Multi-level digital step attenuator and digital step attenuation device
CN120825148A (zh) * 2025-09-19 2025-10-21 中国科学技术大学 一种数控电流模衰减器及其模块与芯片

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JP2003309454A (ja) * 2002-04-15 2003-10-31 Mitsubishi Electric Corp 可変減衰器
JP2011182048A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 可変減衰器
US20130088403A1 (en) * 2011-10-05 2013-04-11 International Business Machines Corporation Low Phase Variation CMOS Digital Attenuator
KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
TW201406058A (zh) * 2012-05-31 2014-02-01 Advantest Singapore Pte Ltd 可變衰減器
JP2014096725A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp ベクトル合成形移相器
US20150137913A1 (en) * 2013-11-19 2015-05-21 Peregrine Semiconductor Corporation Segmented Attenuator with Glitch Reduction
US20150326205A1 (en) * 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with low phase shift
US20160118959A1 (en) * 2014-10-22 2016-04-28 Analog Devices Global Apparatus and methods for reducing glitches in digital step attenuators
US20160134259A1 (en) * 2014-11-11 2016-05-12 Peregrine Semiconductor Corporation Digital Step Attenuator with Reduced Relative Phase Error

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US5666089A (en) * 1996-04-12 1997-09-09 Hewlett-Packard Company Monolithic step attenuator having internal frequency compensation
EP1450479B1 (en) * 2003-02-20 2012-03-28 Sony Ericsson Mobile Communications AB Efficient modulation of RF signals
EP1639717B1 (de) * 2003-06-27 2016-08-10 Rohde & Schwarz GmbH & Co. KG Eichleitungs-anordnung
US8059705B2 (en) * 2007-02-16 2011-11-15 Applied Micro Circuits Corporation Channel equalization using frequency and phase compensation
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JP5692813B2 (ja) * 2008-11-18 2015-04-01 フリースケール セミコンダクター インコーポレイテッド 位相補償のための集積回路、通信ユニット、および方法
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US8452187B2 (en) * 2010-12-02 2013-05-28 Eastern Optx Inc. Bi-directional, compact, multi-path and free space channel replicator
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Publication number Priority date Publication date Assignee Title
JP2003309454A (ja) * 2002-04-15 2003-10-31 Mitsubishi Electric Corp 可変減衰器
JP2011182048A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 可変減衰器
US20130088403A1 (en) * 2011-10-05 2013-04-11 International Business Machines Corporation Low Phase Variation CMOS Digital Attenuator
KR20130103073A (ko) * 2012-03-09 2013-09-23 알에프코어 주식회사 위상 왜곡을 보상하는 감쇄기 및 그의 감쇄 방법
TW201406058A (zh) * 2012-05-31 2014-02-01 Advantest Singapore Pte Ltd 可變衰減器
JP2014096725A (ja) * 2012-11-09 2014-05-22 Mitsubishi Electric Corp ベクトル合成形移相器
US20150137913A1 (en) * 2013-11-19 2015-05-21 Peregrine Semiconductor Corporation Segmented Attenuator with Glitch Reduction
US20150326205A1 (en) * 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with low phase shift
US20160118959A1 (en) * 2014-10-22 2016-04-28 Analog Devices Global Apparatus and methods for reducing glitches in digital step attenuators
US20160134259A1 (en) * 2014-11-11 2016-05-12 Peregrine Semiconductor Corporation Digital Step Attenuator with Reduced Relative Phase Error

Also Published As

Publication number Publication date
CN109964407B (zh) 2024-03-08
US20180062622A1 (en) 2018-03-01
CN109964407A (zh) 2019-07-02
SG11201901793XA (en) 2019-03-28
GB2576804A (en) 2020-03-04
TW201813292A (zh) 2018-04-01
JP2019532596A (ja) 2019-11-07
WO2018044799A1 (en) 2018-03-08
GB201904324D0 (en) 2019-05-15
JP7387783B2 (ja) 2023-11-28
DE112017004354T5 (de) 2019-05-16
KR102579792B1 (ko) 2023-09-19
KR20190052012A (ko) 2019-05-15
JP2022088429A (ja) 2022-06-14

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