KR102565869B1 - 단차형 구조의 광필터 - Google Patents
단차형 구조의 광필터 Download PDFInfo
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- KR102565869B1 KR102565869B1 KR1020190137902A KR20190137902A KR102565869B1 KR 102565869 B1 KR102565869 B1 KR 102565869B1 KR 1020190137902 A KR1020190137902 A KR 1020190137902A KR 20190137902 A KR20190137902 A KR 20190137902A KR 102565869 B1 KR102565869 B1 KR 102565869B1
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 173
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- 239000000463 material Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 32
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- 239000007788 liquid Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000013519 translation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 claims 16
- 238000005266 casting Methods 0.000 claims 1
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- 239000010410 layer Substances 0.000 description 53
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- 230000003595 spectral effect Effects 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000000151 deposition Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 150000003376 silicon Chemical class 0.000 description 5
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- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
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- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Spectrometry And Color Measurement (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020230102639A KR102951105B1 (ko) | 2018-11-02 | 2023-08-07 | 단차형 구조의 광필터 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/179,480 | 2018-11-02 | ||
| US16/179,480 US10962694B2 (en) | 2018-11-02 | 2018-11-02 | Stepped structure optical filter |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230102639A Division KR102951105B1 (ko) | 2018-11-02 | 2023-08-07 | 단차형 구조의 광필터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200050882A KR20200050882A (ko) | 2020-05-12 |
| KR102565869B1 true KR102565869B1 (ko) | 2023-08-10 |
Family
ID=68426196
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190137902A Active KR102565869B1 (ko) | 2018-11-02 | 2019-10-31 | 단차형 구조의 광필터 |
| KR1020230102639A Active KR102951105B1 (ko) | 2018-11-02 | 2023-08-07 | 단차형 구조의 광필터 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230102639A Active KR102951105B1 (ko) | 2018-11-02 | 2023-08-07 | 단차형 구조의 광필터 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10962694B2 (https=) |
| EP (1) | EP3647839B1 (https=) |
| JP (3) | JP7210417B2 (https=) |
| KR (2) | KR102565869B1 (https=) |
| CN (2) | CN111142179B (https=) |
| CA (1) | CA3060740A1 (https=) |
| TW (2) | TWI791917B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10962694B2 (en) | 2018-11-02 | 2021-03-30 | Viavi Solutions Inc. | Stepped structure optical filter |
| US12392945B2 (en) * | 2020-04-28 | 2025-08-19 | Viavi Solutions Inc. | Induced transmission filter with hydrogenated silicon, silver, and silicon dioxide |
| CN111579067B (zh) * | 2020-05-22 | 2023-03-03 | 中国科学院上海技术物理研究所 | 一种具有超宽带外截止的集成窄带分光器件 |
| WO2021237567A1 (zh) * | 2020-05-28 | 2021-12-02 | 深圳市海谱纳米光学科技有限公司 | 一种可调光学滤波器件和光谱成像系统 |
| EP3943988B1 (en) | 2020-07-20 | 2023-12-27 | Samsung Electronics Co., Ltd. | Spectral filter, and image sensor and electronic device including the spectral filter |
| WO2022147920A1 (zh) * | 2021-01-11 | 2022-07-14 | 苏州联讯仪器有限公司 | 用于光通信的光波长测量系统 |
| CN113503978A (zh) * | 2021-08-16 | 2021-10-15 | 苏州联讯仪器有限公司 | 光通信用光波长测量系统 |
| WO2023027523A1 (ko) * | 2021-08-27 | 2023-03-02 | 경북대학교 산학협력단 | 마이크로옵틱 마하젠더 간섭계의 파장대역 특성을 원하는 형상으로 제어하는 방법 |
| KR102727382B1 (ko) * | 2021-08-27 | 2024-11-07 | 경북대학교 산학협력단 | 마이크로옵틱 마하젠더 간섭계의 파장대역 특성을 원하는 형상으로 제어하는 방법 |
| CN114236663B (zh) * | 2021-12-15 | 2025-07-25 | 浙江大学 | 大面积单片集成的平坦化多通道滤光片阵列及制备方法 |
| CN114551489A (zh) * | 2022-02-11 | 2022-05-27 | 中国科学院上海技术物理研究所 | 一种分光与探测一体化的短波红外光谱探测器 |
| CN115831041B (zh) * | 2023-01-09 | 2023-04-18 | 北京数字光芯集成电路设计有限公司 | 一种阶梯式线阵MicroLED、扫描装置及扫描方法 |
| CN119779483A (zh) * | 2025-01-23 | 2025-04-08 | 星遥光宇(常州)科技有限公司 | 多光谱成像系统的焦面补偿方法、焦面补偿系统 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20120200852A1 (en) * | 2010-09-10 | 2012-08-09 | Aerospace Missions Corporation | Spectroscopy and spectral imaging methods and apparatus |
| JP2017168822A (ja) * | 2016-02-12 | 2017-09-21 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | センサデバイスの製造方法 |
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| JPH0814509B2 (ja) * | 1986-05-15 | 1996-02-14 | ミノルタ株式会社 | 分光測定センサ |
| JP3375147B2 (ja) | 1992-05-26 | 2003-02-10 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
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| US10914961B2 (en) | 2017-02-13 | 2021-02-09 | Viavi Solutions Inc. | Optical polarizing filter |
| US10962694B2 (en) | 2018-11-02 | 2021-03-30 | Viavi Solutions Inc. | Stepped structure optical filter |
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2018
- 2018-11-02 US US16/179,480 patent/US10962694B2/en active Active
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2019
- 2019-10-29 CA CA3060740A patent/CA3060740A1/en active Pending
- 2019-10-31 TW TW108139486A patent/TWI791917B/zh active
- 2019-10-31 KR KR1020190137902A patent/KR102565869B1/ko active Active
- 2019-10-31 TW TW111149950A patent/TWI907760B/zh active
- 2019-11-01 EP EP19206709.8A patent/EP3647839B1/en active Active
- 2019-11-01 JP JP2019199619A patent/JP7210417B2/ja active Active
- 2019-11-04 CN CN201911067451.6A patent/CN111142179B/zh active Active
- 2019-11-04 CN CN202311061226.8A patent/CN117031607A/zh active Pending
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2021
- 2021-03-17 US US17/249,872 patent/US11892664B2/en active Active
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2023
- 2023-01-11 JP JP2023002173A patent/JP7822974B2/ja active Active
- 2023-08-07 KR KR1020230102639A patent/KR102951105B1/ko active Active
- 2023-11-30 US US18/523,975 patent/US12436328B2/en active Active
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2024
- 2024-09-06 JP JP2024153647A patent/JP2024174959A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120200852A1 (en) * | 2010-09-10 | 2012-08-09 | Aerospace Missions Corporation | Spectroscopy and spectral imaging methods and apparatus |
| JP2017168822A (ja) * | 2016-02-12 | 2017-09-21 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | センサデバイスの製造方法 |
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| US12436328B2 (en) | 2025-10-07 |
| JP2024174959A (ja) | 2024-12-17 |
| TWI791917B (zh) | 2023-02-11 |
| US10962694B2 (en) | 2021-03-30 |
| US20200142111A1 (en) | 2020-05-07 |
| JP7210417B2 (ja) | 2023-01-23 |
| KR102951105B1 (ko) | 2026-04-09 |
| TW202024680A (zh) | 2020-07-01 |
| EP3647839A3 (en) | 2020-07-29 |
| KR20230118795A (ko) | 2023-08-14 |
| US20210199866A1 (en) | 2021-07-01 |
| CA3060740A1 (en) | 2020-05-02 |
| US11892664B2 (en) | 2024-02-06 |
| JP7822974B2 (ja) | 2026-03-03 |
| EP3647839A2 (en) | 2020-05-06 |
| KR20200050882A (ko) | 2020-05-12 |
| JP2020071488A (ja) | 2020-05-07 |
| CN117031607A (zh) | 2023-11-10 |
| EP3647839B1 (en) | 2024-10-30 |
| JP2023052306A (ja) | 2023-04-11 |
| TWI907760B (zh) | 2025-12-11 |
| CN111142179A (zh) | 2020-05-12 |
| US20240094450A1 (en) | 2024-03-21 |
| TW202316146A (zh) | 2023-04-16 |
| CN111142179B (zh) | 2023-09-08 |
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