KR102563642B1 - 고효율 이면전극형 태양전지 및 그 제조방법 - Google Patents

고효율 이면전극형 태양전지 및 그 제조방법 Download PDF

Info

Publication number
KR102563642B1
KR102563642B1 KR1020197038090A KR20197038090A KR102563642B1 KR 102563642 B1 KR102563642 B1 KR 102563642B1 KR 1020197038090 A KR1020197038090 A KR 1020197038090A KR 20197038090 A KR20197038090 A KR 20197038090A KR 102563642 B1 KR102563642 B1 KR 102563642B1
Authority
KR
South Korea
Prior art keywords
conductor
type region
solar cell
forming
type
Prior art date
Application number
KR1020197038090A
Other languages
English (en)
Korean (ko)
Other versions
KR20200023301A (ko
Inventor
히로시 하시가미
타케노리 와타베
히로유키 오츠카
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20200023301A publication Critical patent/KR20200023301A/ko
Application granted granted Critical
Publication of KR102563642B1 publication Critical patent/KR102563642B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
KR1020197038090A 2017-06-26 2018-05-07 고효율 이면전극형 태양전지 및 그 제조방법 KR102563642B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017124479A JP6741626B2 (ja) 2017-06-26 2017-06-26 高効率裏面電極型太陽電池及びその製造方法
JPJP-P-2017-124479 2017-06-26
PCT/JP2018/017615 WO2019003638A1 (ja) 2017-06-26 2018-05-07 高効率裏面電極型太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
KR20200023301A KR20200023301A (ko) 2020-03-04
KR102563642B1 true KR102563642B1 (ko) 2023-08-04

Family

ID=64741452

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197038090A KR102563642B1 (ko) 2017-06-26 2018-05-07 고효율 이면전극형 태양전지 및 그 제조방법

Country Status (8)

Country Link
US (1) US11984522B2 (ja)
EP (1) EP3648175B1 (ja)
JP (1) JP6741626B2 (ja)
KR (1) KR102563642B1 (ja)
CN (1) CN110800114B (ja)
ES (1) ES2942985T3 (ja)
TW (1) TWI753179B (ja)
WO (1) WO2019003638A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117153951A (zh) * 2023-10-20 2023-12-01 正泰新能科技有限公司 一种背接触光伏组件的生产方法及背接触光伏组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179334A (ja) * 2002-11-26 2004-06-24 Kyocera Corp 太陽電池素子の形成方法
CN101383386A (zh) * 2008-10-24 2009-03-11 中国科学院电工研究所 一种发射极环绕型太阳电池及其制备方法
US20140210073A1 (en) 2011-08-31 2014-07-31 Sharp Kabushiki Kaisha Conductive paste, electrode for semiconductor device, semiconductor device, and method for manufacturing semiconductor device

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5426674A (en) 1977-07-29 1979-02-28 Matsushita Electric Ind Co Ltd Electrode material for semiconductor device
JPS6159546A (ja) 1984-08-30 1986-03-27 Fujitsu Ltd リカバリ・デ−タ制御方式
US6180869B1 (en) 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
US8263858B2 (en) * 2009-04-08 2012-09-11 E I Du Pont De Nemours And Company Solar cell electrode
WO2011074467A1 (ja) * 2009-12-18 2011-06-23 東レ株式会社 半導体デバイスの製造方法および裏面接合型太陽電池
WO2011090169A1 (ja) * 2010-01-22 2011-07-28 シャープ株式会社 裏面電極型太陽電池セル、配線シート、配線シート付き太陽電池セル、太陽電池モジュールおよび配線シート付き太陽電池セルの製造方法
WO2011163534A1 (en) 2010-06-24 2011-12-29 E. I. Du Pont De Nemours And Company Process for the formation of a silver back anode of a silicon solar cell
JP5642591B2 (ja) * 2011-02-28 2014-12-17 三洋電機株式会社 太陽電池モジュール
US20120222721A1 (en) * 2011-03-02 2012-09-06 General Electric Company Photovoltaic module package and fabrication method
KR20120113548A (ko) 2011-04-05 2012-10-15 주식회사 엘지화학 식각 마스크 페이스트 및 이를 이용한 후면전극형 태양전지
US20130288425A1 (en) * 2011-08-05 2013-10-31 Solexel, Inc. End point detection for back contact solar cell laser via drilling
US20140360567A1 (en) * 2011-08-05 2014-12-11 Solexel, Inc. Back contact solar cells using aluminum-based alloy metallization
US20130042912A1 (en) * 2011-08-12 2013-02-21 Hitachi Chemical Company, Ltd. Solder bonded body, method of producing solder bonded body, element, photovoltaic cell, method of producing element and method of producing photovoltaic cell
US10038109B2 (en) * 2011-09-09 2018-07-31 Heraeus Precious Metals North America Conshohocken Llc Silver solar cell contacts
KR20130050721A (ko) * 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
KR101863294B1 (ko) * 2011-11-25 2018-05-31 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양전지 및 그 제조 방법
KR101356849B1 (ko) 2012-03-15 2014-02-03 고려대학교 산학협력단 결정질 실리콘 태양 전지 및 이의 제조방법
TW201340347A (zh) * 2012-03-22 2013-10-01 Motech Ind Inc 太陽能電池
KR101387718B1 (ko) * 2012-05-07 2014-04-22 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP2014029963A (ja) * 2012-07-31 2014-02-13 Panasonic Corp 太陽電池モジュール
CN103151395A (zh) * 2013-01-25 2013-06-12 友达光电股份有限公司 太阳能电池
JP6141223B2 (ja) * 2013-06-14 2017-06-07 三菱電機株式会社 受光素子モジュールおよびその製造方法
JP6599769B2 (ja) 2013-10-25 2019-10-30 シャープ株式会社 光電変換装置
KR101622090B1 (ko) 2013-11-08 2016-05-18 엘지전자 주식회사 태양 전지
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102175893B1 (ko) * 2014-02-24 2020-11-06 엘지전자 주식회사 태양 전지 모듈의 제조 방법
KR101867855B1 (ko) * 2014-03-17 2018-06-15 엘지전자 주식회사 태양 전지
JP2015177175A (ja) * 2014-03-18 2015-10-05 シャープ株式会社 光電変換素子および光電変換素子の製造方法
US9349883B2 (en) * 2014-06-19 2016-05-24 E I Du Pont De Nemours And Company Conductor for a solar cell
WO2016028825A1 (en) * 2014-08-18 2016-02-25 Solexel, Inc. Photovoltaic solar module metallization and distributed shade management connection and fabrication methods
KR101551475B1 (ko) 2015-03-26 2015-09-08 주식회사 엘지화학 식각 마스크 페이스트 및 이를 이용한 후면전극형 태양전지
JP2015188089A (ja) * 2015-04-30 2015-10-29 日立化成株式会社 素子及び太陽電池
US10217877B2 (en) * 2015-07-27 2019-02-26 Lg Electronics Inc. Solar cell
EP3340315B1 (en) * 2015-08-21 2021-10-27 Sharp Kabushiki Kaisha Photoelectric conversion element
KR20170028548A (ko) * 2015-09-04 2017-03-14 엘지전자 주식회사 태양 전지 모듈
JP6598608B2 (ja) 2015-09-10 2019-10-30 ホーチキ株式会社 消火栓装置
JP6559244B2 (ja) * 2015-09-25 2019-08-14 三菱電機株式会社 太陽電池の製造方法および太陽電池
EP3151289A1 (en) * 2015-10-01 2017-04-05 LG Electronics Inc. Solar cell
CN110121787B (zh) * 2016-10-25 2022-10-14 信越化学工业株式会社 高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法
JP6330108B1 (ja) * 2016-11-07 2018-05-23 信越化学工業株式会社 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法
CN110073499B (zh) * 2016-11-15 2024-04-05 信越化学工业株式会社 高效率太阳能电池及高效率太阳能电池的制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179334A (ja) * 2002-11-26 2004-06-24 Kyocera Corp 太陽電池素子の形成方法
CN101383386A (zh) * 2008-10-24 2009-03-11 中国科学院电工研究所 一种发射极环绕型太阳电池及其制备方法
US20140210073A1 (en) 2011-08-31 2014-07-31 Sharp Kabushiki Kaisha Conductive paste, electrode for semiconductor device, semiconductor device, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP6741626B2 (ja) 2020-08-19
US11984522B2 (en) 2024-05-14
TW201907450A (zh) 2019-02-16
EP3648175A4 (en) 2021-03-24
CN110800114B (zh) 2023-04-28
ES2942985T3 (es) 2023-06-08
CN110800114A (zh) 2020-02-14
US20210143291A1 (en) 2021-05-13
WO2019003638A1 (ja) 2019-01-03
EP3648175A1 (en) 2020-05-06
TWI753179B (zh) 2022-01-21
JP2019009312A (ja) 2019-01-17
EP3648175B1 (en) 2023-02-15
KR20200023301A (ko) 2020-03-04

Similar Documents

Publication Publication Date Title
US11538944B2 (en) Solar cell, method for manufacturing solar cell, and solar cell module
JP5490231B2 (ja) 太陽電池素子およびその製造方法ならびに太陽電池モジュール
KR20070071060A (ko) 태양 전지의 제조 방법
EP3916813A1 (en) Double-sided power generation solar cell and fabricating method therefor
JP2014239150A (ja) 太陽電池および太陽電池モジュール
WO2013100085A1 (ja) 太陽電池素子、太陽電池素子の製造方法および太陽電池モジュール
KR102674774B1 (ko) 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법
JP6688244B2 (ja) 高効率太陽電池の製造方法及び太陽電池セルの製造システム
KR102563642B1 (ko) 고효율 이면전극형 태양전지 및 그 제조방법
CN115207169B (zh) P型ibc太阳能电池片及其制备方法、电池组件和光伏系统
US20190081186A1 (en) Solar cell element and solar cell module
KR100995654B1 (ko) 태양전지 및 그 제조방법
WO2013002285A1 (ja) アルミナ膜の形成方法および太陽電池素子
KR20120085067A (ko) 태양전지 제조방법
KR101090124B1 (ko) 태양전지 및 이의 제조방법
JP2012023227A (ja) 太陽電池の製造方法
KR20120027652A (ko) 이중 반사 방지막을 갖는 태양 전지 및 그 제조 방법
KR20120085074A (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant