KR102557501B1 - 금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 - Google Patents
금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 Download PDFInfo
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- KR102557501B1 KR102557501B1 KR1020197036521A KR20197036521A KR102557501B1 KR 102557501 B1 KR102557501 B1 KR 102557501B1 KR 1020197036521 A KR1020197036521 A KR 1020197036521A KR 20197036521 A KR20197036521 A KR 20197036521A KR 102557501 B1 KR102557501 B1 KR 102557501B1
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- H—ELECTRICITY
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- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/14—Metallic material, boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Non-Insulated Conductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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| ATGM104/2017 | 2017-05-11 | ||
| ATGM104/2017U AT15574U3 (de) | 2017-05-11 | 2017-05-11 | Flexibles Bauteil mit Schichtaufbau mit metallischer Lage |
| PCT/AT2018/000026 WO2018204944A1 (de) | 2017-05-11 | 2018-04-19 | Flexibles bauteil mit schichtaufbau mit metallischer lage |
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| KR20200008575A KR20200008575A (ko) | 2020-01-28 |
| KR102557501B1 true KR102557501B1 (ko) | 2023-07-20 |
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| TW (1) | TWI793121B (https=) |
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| DE102018123944A1 (de) * | 2018-09-27 | 2020-04-02 | Liebherr-Hausgeräte Ochsenhausen GmbH | Vakuumdämmkörper für Kühl- und/oder Gefriergeräte |
| CN112582479A (zh) * | 2020-12-30 | 2021-03-30 | 福建华佳彩有限公司 | 一种顶栅结构的薄膜晶体管及制作方法 |
| TW202318568A (zh) * | 2021-07-30 | 2023-05-01 | 日商尼康股份有限公司 | 金屬配線的製造方法、電晶體的製造方法及金屬配線 |
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| JP2015119175A (ja) * | 2013-11-15 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
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| JP2002232142A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 多層配線基板およびその製造方法 |
| JP2002324874A (ja) * | 2001-04-25 | 2002-11-08 | Kyocera Corp | 配線基板 |
| JP4530579B2 (ja) * | 2001-05-22 | 2010-08-25 | 京セラ株式会社 | 半導体素子収納用パッケージ |
| JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
| KR20060090523A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 표시 장치용 배선 및 상기 배선을 포함하는 박막트랜지스터 표시판 |
| JP2007069561A (ja) * | 2005-09-09 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | 2層フレキシブル基板とその製造方法 |
| EP2188406B1 (en) * | 2007-09-12 | 2018-03-07 | Flisom AG | Method for manufacturing a compound film |
| KR101542840B1 (ko) * | 2008-09-09 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
| JP5874308B2 (ja) * | 2011-10-21 | 2016-03-02 | 三菱瓦斯化学株式会社 | 銅及びモリブデンを含む多層膜用エッチング液 |
| CN102560383B (zh) * | 2012-01-12 | 2013-10-23 | 宝鸡市科迪普有色金属加工有限公司 | 钼铌合金板靶材加工工艺 |
| DE102012023260A1 (de) * | 2012-11-29 | 2014-06-05 | Oerlikon Trading Ag, Trübbach | Verfahren zur Strukturierung von Schichtoberflächen und Vorrichtung dazu |
| KR101600169B1 (ko) * | 2013-03-12 | 2016-03-04 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재 |
| KR102194818B1 (ko) * | 2013-08-06 | 2020-12-24 | 삼성디스플레이 주식회사 | 플렉서블 터치 표시 패널 |
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| KR102439505B1 (ko) * | 2015-06-11 | 2022-09-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
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- 2018-04-19 JP JP2019561901A patent/JP7282688B2/ja active Active
- 2018-05-02 TW TW107114884A patent/TWI793121B/zh active
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| WO2004038049A1 (ja) * | 2002-10-28 | 2004-05-06 | A.L.M.T.Corp. | 複合材料、その製造方法およびそれを用いた部材 |
| JP2015119175A (ja) * | 2013-11-15 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200008575A (ko) | 2020-01-28 |
| TWI793121B (zh) | 2023-02-21 |
| AT15574U3 (de) | 2018-05-15 |
| WO2018204944A1 (de) | 2018-11-15 |
| CN110651373A (zh) | 2020-01-03 |
| CN110651373B (zh) | 2023-08-15 |
| JP2020522728A (ja) | 2020-07-30 |
| AT15574U2 (de) | 2018-03-15 |
| JP7282688B2 (ja) | 2023-05-29 |
| TW201903177A (zh) | 2019-01-16 |
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