KR102554147B1 - 칩의 제조 방법 - Google Patents

칩의 제조 방법 Download PDF

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Publication number
KR102554147B1
KR102554147B1 KR1020180062576A KR20180062576A KR102554147B1 KR 102554147 B1 KR102554147 B1 KR 102554147B1 KR 1020180062576 A KR1020180062576 A KR 1020180062576A KR 20180062576 A KR20180062576 A KR 20180062576A KR 102554147 B1 KR102554147 B1 KR 102554147B1
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South Korea
Prior art keywords
workpiece
holding
chip
modified layer
divided
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Korean (ko)
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KR20180133215A (ko
Inventor
요시아키 요도
진얀 자오
시게노리 하라다
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가부시기가이샤 디스코
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Publication of KR20180133215A publication Critical patent/KR20180133215A/ko
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Publication of KR102554147B1 publication Critical patent/KR102554147B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H01L21/78—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H01L21/324—
    • H01L21/76—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
KR1020180062576A 2017-06-05 2018-05-31 칩의 제조 방법 Active KR102554147B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-110732 2017-06-05
JP2017110732A JP6925717B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Publications (2)

Publication Number Publication Date
KR20180133215A KR20180133215A (ko) 2018-12-13
KR102554147B1 true KR102554147B1 (ko) 2023-07-10

Family

ID=64542716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180062576A Active KR102554147B1 (ko) 2017-06-05 2018-05-31 칩의 제조 방법

Country Status (4)

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JP (1) JP6925717B2 (https=)
KR (1) KR102554147B1 (https=)
CN (1) CN108987339B (https=)
TW (1) TWI765027B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3913660B1 (en) * 2020-05-22 2024-06-19 Nichia Corporation Method of cutting semiconductor element and semiconductor element
CN112404747B (zh) * 2020-11-09 2022-05-24 松山湖材料实验室 一种晶圆剥离方法和晶圆剥离装置
CN119525777B (zh) * 2025-01-23 2025-04-25 合肥芯谷微电子股份有限公司 一种半导体生产用防护输送载具

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2008153420A (ja) 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP2009043992A (ja) 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010186971A (ja) 2009-02-13 2010-08-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198783A (ja) * 1992-01-23 1993-08-06 Hitachi Ltd 半導体集積回路装置の製造方法
JPH06275712A (ja) * 1993-03-24 1994-09-30 Nec Kansai Ltd ダイシング装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP2007012878A (ja) * 2005-06-30 2007-01-18 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP4749851B2 (ja) * 2005-11-29 2011-08-17 株式会社ディスコ ウェーハの分割方法
JP2007223854A (ja) * 2006-02-24 2007-09-06 Seiko Epson Corp 基板分割方法、基板分割装置、レーザスクライブ装置、電気光学装置、電子機器
JP5139739B2 (ja) * 2007-07-19 2013-02-06 パナソニック株式会社 積層体の割断方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP5967405B2 (ja) * 2012-01-17 2016-08-10 アイシン精機株式会社 レーザによる割断方法、及びレーザ割断装置
JP2013152988A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5988601B2 (ja) * 2012-02-13 2016-09-07 株式会社ディスコ 光デバイスウェーハの分割方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP2015069975A (ja) * 2013-09-26 2015-04-13 株式会社ディスコ 被加工物の加工方法
JP6366393B2 (ja) * 2014-07-15 2018-08-01 株式会社ディスコ ウェーハの加工方法
JP6347714B2 (ja) * 2014-10-02 2018-06-27 株式会社ディスコ ウエーハの加工方法
JP2017011134A (ja) * 2015-06-23 2017-01-12 株式会社ディスコ デバイスチップの製造方法
JP6775880B2 (ja) * 2016-09-21 2020-10-28 株式会社ディスコ ウェーハの加工方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2008153420A (ja) 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP2009043992A (ja) 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010186971A (ja) 2009-02-13 2010-08-26 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
TW201903875A (zh) 2019-01-16
TWI765027B (zh) 2022-05-21
CN108987339A (zh) 2018-12-11
JP2018206941A (ja) 2018-12-27
CN108987339B (zh) 2023-12-15
JP6925717B2 (ja) 2021-08-25
KR20180133215A (ko) 2018-12-13

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