KR102541387B1 - 인덕터들을 갖는 유리 웨이퍼를 이용한 진보된-노드 soc(system-on-chip)를 갖는 인덕터들의 통합 및 웨이퍼간 결합 - Google Patents

인덕터들을 갖는 유리 웨이퍼를 이용한 진보된-노드 soc(system-on-chip)를 갖는 인덕터들의 통합 및 웨이퍼간 결합 Download PDF

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KR102541387B1
KR102541387B1 KR1020187009210A KR20187009210A KR102541387B1 KR 102541387 B1 KR102541387 B1 KR 102541387B1 KR 1020187009210 A KR1020187009210 A KR 1020187009210A KR 20187009210 A KR20187009210 A KR 20187009210A KR 102541387 B1 KR102541387 B1 KR 102541387B1
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wafer
inductor
inductor wafer
soc
forming
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KR20180048948A (ko
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카림 아라비
라빈드라 바만 쉬노이
예브게니 페트로비치 고세브
메테 에르터크
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퀄컴 인코포레이티드
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    • H01L23/49833
    • H01L23/49816
    • H01L23/49827
    • H01L23/645
    • H01L28/10
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/501Inductive arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/401Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/222Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/255Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/728Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors

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  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
KR1020187009210A 2015-09-02 2016-08-08 인덕터들을 갖는 유리 웨이퍼를 이용한 진보된-노드 soc(system-on-chip)를 갖는 인덕터들의 통합 및 웨이퍼간 결합 Active KR102541387B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/843,964 2015-09-02
US14/843,964 US20170062398A1 (en) 2015-09-02 2015-09-02 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining
PCT/US2016/045998 WO2017039962A1 (en) 2015-09-02 2016-08-08 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining

Publications (2)

Publication Number Publication Date
KR20180048948A KR20180048948A (ko) 2018-05-10
KR102541387B1 true KR102541387B1 (ko) 2023-06-08

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Application Number Title Priority Date Filing Date
KR1020187009210A Active KR102541387B1 (ko) 2015-09-02 2016-08-08 인덕터들을 갖는 유리 웨이퍼를 이용한 진보된-노드 soc(system-on-chip)를 갖는 인덕터들의 통합 및 웨이퍼간 결합

Country Status (8)

Country Link
US (2) US20170062398A1 (https=)
EP (1) EP3345218B1 (https=)
JP (1) JP2018532260A (https=)
KR (1) KR102541387B1 (https=)
CN (1) CN108012565A (https=)
BR (1) BR112018004288A2 (https=)
CA (1) CA2992855A1 (https=)
WO (1) WO2017039962A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935076B1 (en) * 2015-09-30 2018-04-03 Apple Inc. Structure and method for fabricating a computing system with an integrated voltage regulator module
US20170169934A1 (en) * 2015-12-15 2017-06-15 Globalfoundries Inc. Patterned magnetic shields for inductors and transformers
US20200203067A1 (en) * 2017-09-29 2020-06-25 Intel Corporation Magnetic core/shell particles for inductor arrays
US11538617B2 (en) 2018-06-29 2022-12-27 Intel Corporation Integrated magnetic core inductors on glass core substrates
US11271071B2 (en) * 2019-11-15 2022-03-08 Nuvia, Inc. Integrated system with power management integrated circuit having on-chip thin film inductors
US11450628B2 (en) * 2019-12-15 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure including a solenoid inductor laterally aside a die and method of fabricating the same
KR102949699B1 (ko) 2020-02-19 2026-04-10 삼성전자주식회사 반도체 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020095768A1 (en) * 1999-07-09 2002-07-25 Micron Technology, Inc. Integrated circuit inductors
US7463131B1 (en) 2005-01-24 2008-12-09 National Semiconductor Corporation Patterned magnetic layer on-chip inductor
US20150137342A1 (en) * 2013-11-20 2015-05-21 Marvell World Trade Ltd. Inductor/transformer outside of silicon wafer

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Publication number Priority date Publication date Assignee Title
US6531945B1 (en) * 2000-03-10 2003-03-11 Micron Technology, Inc. Integrated circuit inductor with a magnetic core
US6992871B2 (en) * 2003-08-06 2006-01-31 Micron Technology, Inc. Microtransformer for system-on-chip power supply
US20060088971A1 (en) * 2004-10-27 2006-04-27 Crawford Ankur M Integrated inductor and method of fabrication
JP4929857B2 (ja) * 2006-06-12 2012-05-09 株式会社日立製作所 半導体装置
US9105627B2 (en) * 2011-11-04 2015-08-11 International Business Machines Corporation Coil inductor for on-chip or on-chip stack
US10115671B2 (en) * 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
US9041152B2 (en) * 2013-03-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Inductor with magnetic material
US9165791B2 (en) * 2013-10-31 2015-10-20 Qualcomm Incorporated Wireless interconnects in an interposer
WO2015127207A1 (en) * 2014-02-21 2015-08-27 Marvell World Trade Ltd. Method and apparatus for incorporating passive devices in an integrated passive device separate from a die
US9893141B2 (en) * 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020095768A1 (en) * 1999-07-09 2002-07-25 Micron Technology, Inc. Integrated circuit inductors
US7463131B1 (en) 2005-01-24 2008-12-09 National Semiconductor Corporation Patterned magnetic layer on-chip inductor
US20150137342A1 (en) * 2013-11-20 2015-05-21 Marvell World Trade Ltd. Inductor/transformer outside of silicon wafer

Also Published As

Publication number Publication date
WO2017039962A1 (en) 2017-03-09
CA2992855A1 (en) 2017-03-09
JP2018532260A (ja) 2018-11-01
BR112018004288A2 (en) 2018-10-09
EP3345218C0 (en) 2025-06-25
CN108012565A (zh) 2018-05-08
US20170062398A1 (en) 2017-03-02
KR20180048948A (ko) 2018-05-10
EP3345218A1 (en) 2018-07-11
US20210384292A1 (en) 2021-12-09
EP3345218B1 (en) 2025-06-25

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