CA2992855A1 - Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining - Google Patents

Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining Download PDF

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Publication number
CA2992855A1
CA2992855A1 CA2992855A CA2992855A CA2992855A1 CA 2992855 A1 CA2992855 A1 CA 2992855A1 CA 2992855 A CA2992855 A CA 2992855A CA 2992855 A CA2992855 A CA 2992855A CA 2992855 A1 CA2992855 A1 CA 2992855A1
Authority
CA
Canada
Prior art keywords
wafer
inductor
soc
vias
magnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2992855A
Other languages
English (en)
French (fr)
Inventor
Karim Arabi
Ravindra Vaman Shenoy
Evgeni Petrovich Gousev
Mete Erturk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CA2992855A1 publication Critical patent/CA2992855A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/728—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
CA2992855A 2015-09-02 2016-08-08 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining Abandoned CA2992855A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/843,964 2015-09-02
US14/843,964 US20170062398A1 (en) 2015-09-02 2015-09-02 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining
PCT/US2016/045998 WO2017039962A1 (en) 2015-09-02 2016-08-08 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining

Publications (1)

Publication Number Publication Date
CA2992855A1 true CA2992855A1 (en) 2017-03-09

Family

ID=56684312

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2992855A Abandoned CA2992855A1 (en) 2015-09-02 2016-08-08 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining

Country Status (8)

Country Link
US (2) US20170062398A1 (https=)
EP (1) EP3345218B1 (https=)
JP (1) JP2018532260A (https=)
KR (1) KR102541387B1 (https=)
CN (1) CN108012565A (https=)
BR (1) BR112018004288A2 (https=)
CA (1) CA2992855A1 (https=)
WO (1) WO2017039962A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935076B1 (en) * 2015-09-30 2018-04-03 Apple Inc. Structure and method for fabricating a computing system with an integrated voltage regulator module
US20170169934A1 (en) * 2015-12-15 2017-06-15 Globalfoundries Inc. Patterned magnetic shields for inductors and transformers
US20200203067A1 (en) * 2017-09-29 2020-06-25 Intel Corporation Magnetic core/shell particles for inductor arrays
US11538617B2 (en) 2018-06-29 2022-12-27 Intel Corporation Integrated magnetic core inductors on glass core substrates
US11271071B2 (en) * 2019-11-15 2022-03-08 Nuvia, Inc. Integrated system with power management integrated circuit having on-chip thin film inductors
US11450628B2 (en) * 2019-12-15 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure including a solenoid inductor laterally aside a die and method of fabricating the same
KR102949699B1 (ko) 2020-02-19 2026-04-10 삼성전자주식회사 반도체 패키지

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
US6531945B1 (en) * 2000-03-10 2003-03-11 Micron Technology, Inc. Integrated circuit inductor with a magnetic core
US6992871B2 (en) * 2003-08-06 2006-01-31 Micron Technology, Inc. Microtransformer for system-on-chip power supply
US20060088971A1 (en) * 2004-10-27 2006-04-27 Crawford Ankur M Integrated inductor and method of fabrication
US7463131B1 (en) * 2005-01-24 2008-12-09 National Semiconductor Corporation Patterned magnetic layer on-chip inductor
JP4929857B2 (ja) * 2006-06-12 2012-05-09 株式会社日立製作所 半導体装置
US9105627B2 (en) * 2011-11-04 2015-08-11 International Business Machines Corporation Coil inductor for on-chip or on-chip stack
US10115671B2 (en) * 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
US9041152B2 (en) * 2013-03-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Inductor with magnetic material
US9165791B2 (en) * 2013-10-31 2015-10-20 Qualcomm Incorporated Wireless interconnects in an interposer
US20150137342A1 (en) * 2013-11-20 2015-05-21 Marvell World Trade Ltd. Inductor/transformer outside of silicon wafer
WO2015127207A1 (en) * 2014-02-21 2015-08-27 Marvell World Trade Ltd. Method and apparatus for incorporating passive devices in an integrated passive device separate from a die
US9893141B2 (en) * 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core

Also Published As

Publication number Publication date
WO2017039962A1 (en) 2017-03-09
JP2018532260A (ja) 2018-11-01
BR112018004288A2 (en) 2018-10-09
EP3345218C0 (en) 2025-06-25
CN108012565A (zh) 2018-05-08
US20170062398A1 (en) 2017-03-02
KR20180048948A (ko) 2018-05-10
EP3345218A1 (en) 2018-07-11
KR102541387B1 (ko) 2023-06-08
US20210384292A1 (en) 2021-12-09
EP3345218B1 (en) 2025-06-25

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Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20200831