KR102537060B1 - 메사들 사이에 가변하는 깊이들의 영역들을 갖는 기판 지지부 및 대응하는 온도 종속 제조 방법 - Google Patents

메사들 사이에 가변하는 깊이들의 영역들을 갖는 기판 지지부 및 대응하는 온도 종속 제조 방법 Download PDF

Info

Publication number
KR102537060B1
KR102537060B1 KR1020170126866A KR20170126866A KR102537060B1 KR 102537060 B1 KR102537060 B1 KR 102537060B1 KR 1020170126866 A KR1020170126866 A KR 1020170126866A KR 20170126866 A KR20170126866 A KR 20170126866A KR 102537060 B1 KR102537060 B1 KR 102537060B1
Authority
KR
South Korea
Prior art keywords
mesas
substrate
support plate
regions
sealing band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170126866A
Other languages
English (en)
Korean (ko)
Other versions
KR20180060954A (ko
Inventor
앤 에릭슨
키이스 가프
데빈 램더트
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20180060954A publication Critical patent/KR20180060954A/ko
Application granted granted Critical
Publication of KR102537060B1 publication Critical patent/KR102537060B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/683—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H01L21/67098—
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020170126866A 2016-11-29 2017-09-29 메사들 사이에 가변하는 깊이들의 영역들을 갖는 기판 지지부 및 대응하는 온도 종속 제조 방법 Active KR102537060B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/363,558 US20180148835A1 (en) 2016-11-29 2016-11-29 Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US15/363,558 2016-11-29

Publications (2)

Publication Number Publication Date
KR20180060954A KR20180060954A (ko) 2018-06-07
KR102537060B1 true KR102537060B1 (ko) 2023-05-25

Family

ID=62193224

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170126866A Active KR102537060B1 (ko) 2016-11-29 2017-09-29 메사들 사이에 가변하는 깊이들의 영역들을 갖는 기판 지지부 및 대응하는 온도 종속 제조 방법

Country Status (6)

Country Link
US (2) US20180148835A1 (https=)
JP (1) JP7111460B2 (https=)
KR (1) KR102537060B1 (https=)
CN (1) CN108335993B (https=)
SG (1) SG10201708450PA (https=)
TW (1) TWI783955B (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017127163A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US20180204747A1 (en) * 2017-01-17 2018-07-19 Applied Materials, Inc. Substrate support assembly having surface features to improve thermal performance
US11133212B2 (en) * 2018-05-16 2021-09-28 Applied Materials, Inc. High temperature electrostatic chuck
WO2019245727A1 (en) * 2018-06-22 2019-12-26 Applied Materials, Inc. Methods of minimizing wafer backside damage in semiconductor wafer processing
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
KR102403856B1 (ko) * 2018-11-05 2022-05-30 램 리써치 코포레이션 에칭 층을 에칭하기 위한 방법
US20220002866A1 (en) * 2018-11-28 2022-01-06 Lam Research Corporation Pedestal including vapor chamber for substrate processing systems
WO2020149936A1 (en) * 2019-01-18 2020-07-23 Applied Materials, Inc. Heated pedestal design for improved heat transfer and temperature uniformity
JP7058239B2 (ja) * 2019-03-14 2022-04-21 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
KR102875947B1 (ko) * 2019-03-15 2025-10-23 램 리써치 코포레이션 멀티-존 기판 지지부들의 온도 천이들 (temperature transients) 을 조절함으로써 임계 치수 불균일의 신속 튜닝
WO2020214607A1 (en) 2019-04-15 2020-10-22 Applied Materials, Inc. Electrostatic chucking process
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
US11075104B2 (en) * 2019-08-27 2021-07-27 Taiwan Semiconductor Manufacturing Company Limited Semiconductor chuck and method of making
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム
JP7660347B2 (ja) * 2020-06-22 2025-04-11 東京エレクトロン株式会社 載置台の製造方法
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
WO2022144144A1 (en) 2020-12-29 2022-07-07 Asml Holding N.V. Vacuum sheet bond fixturing and flexible burl applications for substrate tables
CN113201728B (zh) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 半导体晶圆承载结构及金属有机化学气相沉积装置
US12331984B2 (en) 2021-05-10 2025-06-17 Applied Materials, Inc. Cryogenic micro-zone electrostatic chuck connector assembly
US20220367236A1 (en) * 2021-05-16 2022-11-17 Applied Materials, Inc. Heater pedestal with improved uniformity
KR102572807B1 (ko) * 2021-06-10 2023-08-29 경희대학교 산학협력단 기판의 온도균일도 제어장치 및 제어방법
CN113622021B (zh) * 2021-06-18 2023-02-17 华灿光电（浙江）有限公司 用于提高外延片的生长均匀度的外延托盘
CN115513104A (zh) * 2021-06-23 2022-12-23 中微半导体设备(上海)股份有限公司 制作基片承载盘的方法、基片承载盘及其制作系统
JP7572936B2 (ja) * 2021-11-29 2024-10-24 日本碍子株式会社 ウエハ載置台
JP7818179B2 (ja) * 2022-03-29 2026-02-20 Toto株式会社 静電チャック
US12542260B2 (en) * 2022-12-14 2026-02-03 Applied Materials, Inc. Surface topologies of electrostatic substrate support for particle reduction
WO2024135380A1 (ja) * 2022-12-21 2024-06-27 東京エレクトロン株式会社 基板処理装置及び静電チャック
WO2024132327A1 (en) * 2022-12-23 2024-06-27 Asml Netherlands B.V. Method of generating a projection pattern of a plurality of projections of a substrate table
US20250096703A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Electrostatic Chuck Having Multi Zone Gas Cooling
US20250283205A1 (en) * 2024-03-08 2025-09-11 Applied Materials, Inc. Manufacturing of mesas using deposited layer for substrate supports
WO2026044003A1 (en) * 2024-08-23 2026-02-26 Lam Research Corporation Improved wafer temperature uniformity via localized increase in substrate contact surface area density
CN119069392B (zh) * 2024-10-31 2025-03-14 深圳市新凯来技术有限公司 基板、卡盘及刻蚀机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049352A (ja) * 2004-07-30 2006-02-16 Sumitomo Osaka Cement Co Ltd サセプタ装置
JP2013153171A (ja) * 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357006A (en) 1980-11-28 1982-11-02 International Business Machines Corporation Distortion free 3 point vacuum fixture
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JP3129452B2 (ja) 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
US5096536A (en) 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH07153825A (ja) 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US5583736A (en) 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5609720A (en) 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
US5923408A (en) 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
JPH09213777A (ja) 1996-01-31 1997-08-15 Kyocera Corp 静電チャック
US5761023A (en) 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6077357A (en) 1997-05-29 2000-06-20 Applied Materials, Inc. Orientless wafer processing on an electrostatic chuck
US6286451B1 (en) 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5994662A (en) 1997-05-29 1999-11-30 Applied Materials, Inc. Unique baffle to deflect remote plasma clean gases
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
JPH11209182A (ja) 1998-01-22 1999-08-03 Sumitomo Metal Ind Ltd プラズマ耐食部材
JPH11330219A (ja) * 1998-05-12 1999-11-30 Hitachi Ltd 静電吸着装置
US6320736B1 (en) 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US6413113B2 (en) 1999-07-14 2002-07-02 Aehr Test Systems Kinematic coupling
US6196532B1 (en) 1999-08-27 2001-03-06 Applied Materials, Inc. 3 point vacuum chuck with non-resilient support members
US6461980B1 (en) 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
JP3859937B2 (ja) 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
WO2002017354A2 (en) 2000-08-22 2002-02-28 Ade Corporation Ring chuck to hold 200 and 300 mm wafer
US6960743B2 (en) 2000-12-05 2005-11-01 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
JP4312394B2 (ja) 2001-01-29 2009-08-12 日本碍子株式会社 静電チャックおよび基板処理装置
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
JP2002270681A (ja) * 2001-03-07 2002-09-20 Anelva Corp 基板処理用静電吸着機構
US6628503B2 (en) 2001-03-13 2003-09-30 Nikon Corporation Gas cooled electrostatic pin chuck for vacuum applications
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6682603B2 (en) * 2002-05-07 2004-01-27 Applied Materials Inc. Substrate support with extended radio frequency electrode upper surface
KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10323085A1 (de) 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
JP3894562B2 (ja) 2003-10-01 2007-03-22 キヤノン株式会社 基板吸着装置、露光装置およびデバイス製造方法
US6946403B2 (en) 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
KR100666039B1 (ko) 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
JP4647595B2 (ja) 2004-02-25 2011-03-09 Ｊｘ日鉱日石金属株式会社 気相成長装置
TW200711029A (en) * 2005-08-05 2007-03-16 Tokyo Electron Ltd Substrate processing apparatus and substrate stage used therein
JP2007067394A (ja) * 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
US7956310B2 (en) * 2005-09-30 2011-06-07 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
DE102005049598B4 (de) 2005-10-17 2017-10-19 Att Advanced Temperature Test Systems Gmbh Hybrid Chuck
US7869184B2 (en) 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
KR20080029425A (ko) * 2006-09-29 2008-04-03 삼성전자주식회사 정전척
JP4898556B2 (ja) 2007-05-23 2012-03-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2009060035A (ja) 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd 静電チャック部材、その製造方法及び静電チャック装置
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
JP2010278196A (ja) * 2009-05-28 2010-12-09 Renesas Electronics Corp 基板保持治具
JP5243465B2 (ja) * 2010-01-28 2013-07-24 パナソニック株式会社 プラズマ処理装置
JP5810517B2 (ja) 2010-12-02 2015-11-11 富士電機株式会社 吸着装置および吸着方法
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
JP5863582B2 (ja) 2012-07-02 2016-02-16 東京エレクトロン株式会社 プラズマ処理装置、及び温度制御方法
KR20160006778A (ko) 2013-05-10 2016-01-19 어플라이드 머티어리얼스, 인코포레이티드 연성 재료를 이용한 돔 냉각
WO2015013142A1 (en) * 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
WO2015013143A1 (en) * 2013-07-22 2015-01-29 Applied Materials, Inc. An end effector for transferring a substrate
WO2015077590A1 (en) 2013-11-22 2015-05-28 Applied Materials, Inc. Pad design for electrostatic chuck surface
GB201402126D0 (en) 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
US9601348B2 (en) * 2014-03-13 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method of forming same
JP6349228B2 (ja) 2014-10-22 2018-06-27 新光電気工業株式会社 静電チャック及びその静電チャックに使用されるベース部材
US20160230269A1 (en) 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
KR20190077117A (ko) 2016-11-21 2019-07-02 어플라이드 머티어리얼스, 인코포레이티드 효율적인 가스 분배 조립체 냉각을 위한 동심형 또는 나선형 채널을 갖는 2구역 유동 냉각 플레이트 설계
US20180204747A1 (en) * 2017-01-17 2018-07-19 Applied Materials, Inc. Substrate support assembly having surface features to improve thermal performance

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049352A (ja) * 2004-07-30 2006-02-16 Sumitomo Osaka Cement Co Ltd サセプタ装置
JP2013153171A (ja) * 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US20220380894A1 (en) 2022-12-01
US20180148835A1 (en) 2018-05-31
SG10201708450PA (en) 2018-06-28
US12227840B2 (en) 2025-02-18
JP2018098497A (ja) 2018-06-21
CN108335993B (zh) 2023-08-18
KR20180060954A (ko) 2018-06-07
TWI783955B (zh) 2022-11-21
CN108335993A (zh) 2018-07-27
TW201834027A (zh) 2018-09-16
JP7111460B2 (ja) 2022-08-02

Similar Documents

Publication Publication Date Title
KR102537060B1 (ko) 메사들 사이에 가변하는 깊이들의 영역들을 갖는 기판 지지부 및 대응하는 온도 종속 제조 방법
KR102638983B1 (ko) 증가하는 면적 밀도를 갖는 기판 지지부 및 대응하는 제조 방법
KR102488729B1 (ko) 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어
JP7530874B2 (ja) 可動エッジリング設計
CN110277293A (zh) 用于等离子体处理中均匀性控制的锥形上电极
CN110383454A (zh) 底部边缘环和中部边缘环
JP7754833B2 (ja) 一体型シールを備える冷却エッジリング
TW201926536A (zh) 底部和中間邊緣環
TWI760111B (zh) 底部和中間邊緣環
TWI917991B (zh) 底部和中間邊緣環
TW202507918A (zh) 底部和中間邊緣環

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000