KR102498153B1 - 기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 보유지지 방법, 성막 방법, 및 전자 디바이스의 제조 방법 - Google Patents
기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 보유지지 방법, 성막 방법, 및 전자 디바이스의 제조 방법 Download PDFInfo
- Publication number
- KR102498153B1 KR102498153B1 KR1020200136927A KR20200136927A KR102498153B1 KR 102498153 B1 KR102498153 B1 KR 102498153B1 KR 1020200136927 A KR1020200136927 A KR 1020200136927A KR 20200136927 A KR20200136927 A KR 20200136927A KR 102498153 B1 KR102498153 B1 KR 102498153B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- holding
- adhesive
- substrate holding
- adhesive pad
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 388
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 158
- 230000001070 adhesive effect Effects 0.000 claims abstract description 158
- 230000005291 magnetic effect Effects 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 238000005299 abrasion Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 77
- 238000003825 pressing Methods 0.000 description 69
- 239000010410 layer Substances 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 41
- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000000926 separation method Methods 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002096 quantum dot Substances 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002889 diamagnetic material Substances 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019196796A JP7057336B2 (ja) | 2019-10-29 | 2019-10-29 | 基板保持部材、基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法 |
JPJP-P-2019-196796 | 2019-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20210052264A KR20210052264A (ko) | 2021-05-10 |
KR102498153B1 true KR102498153B1 (ko) | 2023-02-08 |
Family
ID=75648801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020200136927A KR102498153B1 (ko) | 2019-10-29 | 2020-10-21 | 기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 보유지지 방법, 성막 방법, 및 전자 디바이스의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7057336B2 (zh) |
KR (1) | KR102498153B1 (zh) |
CN (1) | CN112750744B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108133A (ja) * | 2004-09-30 | 2006-04-20 | Tokyo Electron Ltd | 基板搬送装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08294889A (ja) * | 1995-04-28 | 1996-11-12 | Murata Mfg Co Ltd | 物品移載装置 |
WO2003075343A1 (en) * | 2002-03-05 | 2003-09-12 | Sharp Kabushiki Kaisha | Method for holding substrate in vacuum, method for manufacturing liquid crystal display device, and device for holding substrate |
JP5268013B2 (ja) * | 2009-03-31 | 2013-08-21 | 株式会社アルバック | 保持装置及び搬送装置 |
JP2012234882A (ja) * | 2011-04-28 | 2012-11-29 | Toray Eng Co Ltd | 半導体チップのピックアップ装置 |
JP2013055093A (ja) * | 2011-09-01 | 2013-03-21 | Creative Technology:Kk | 粘着チャック装置及びワークの粘着保持方法 |
JP6080647B2 (ja) * | 2013-03-28 | 2017-02-15 | 株式会社Screenホールディングス | 剥離装置 |
JP6143572B2 (ja) * | 2013-06-18 | 2017-06-07 | 株式会社Screenホールディングス | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 |
WO2015083257A1 (ja) * | 2013-12-04 | 2015-06-11 | 信越エンジニアリング株式会社 | 貼合デバイスの製造装置 |
JP6419635B2 (ja) * | 2014-04-23 | 2018-11-07 | 株式会社アルバック | 保持装置、真空処理装置 |
JP6316181B2 (ja) * | 2014-12-18 | 2018-04-25 | 東京エレクトロン株式会社 | 基板保持ステージ |
KR102527366B1 (ko) * | 2016-10-19 | 2023-05-02 | 삼성디스플레이 주식회사 | 표시 모듈의 박리 방법 및 표시 모듈의 제조 방법 |
-
2019
- 2019-10-29 JP JP2019196796A patent/JP7057336B2/ja active Active
-
2020
- 2020-10-21 KR KR1020200136927A patent/KR102498153B1/ko active IP Right Grant
- 2020-10-29 CN CN202011178132.5A patent/CN112750744B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108133A (ja) * | 2004-09-30 | 2006-04-20 | Tokyo Electron Ltd | 基板搬送装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021072322A (ja) | 2021-05-06 |
JP7057336B2 (ja) | 2022-04-19 |
CN112750744B (zh) | 2023-06-27 |
CN112750744A (zh) | 2021-05-04 |
KR20210052264A (ko) | 2021-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011195907A (ja) | マスク保持装置及び薄膜形成装置 | |
US20100080891A1 (en) | Holding mechanism, processing apparatus including holding mechanism, deposition method using processing apparatus, and method of manufacturing image display device | |
JP2019099913A (ja) | 成膜装置、成膜方法、及び有機el表示装置の製造方法 | |
KR102505832B1 (ko) | 흡착장치, 위치 조정 방법, 및 성막 방법 | |
KR102501606B1 (ko) | 기판 박리 장치, 기판 처리 장치, 및 기판 박리 방법 | |
JP2021072320A (ja) | 基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法 | |
KR102498153B1 (ko) | 기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 보유지지 방법, 성막 방법, 및 전자 디바이스의 제조 방법 | |
KR102498151B1 (ko) | 기판 보유지지 장치, 기판 처리 장치, 기판 보유지지 방법, 성막 방법, 및 전자 디바이스의 제조 방법 | |
KR102459872B1 (ko) | 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법 | |
CN112779503B (zh) | 成膜装置及成膜装置的控制方法 | |
KR102419064B1 (ko) | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 | |
KR102430370B1 (ko) | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 | |
CN109972085B (zh) | 静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法 | |
KR102579389B1 (ko) | 기판 보유지지 유닛, 기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 처리 방법 및 전자 디바이스의 제조 방법 | |
JP7450366B2 (ja) | 基板保持装置、基板処理装置、基板保持方法、反転方法、成膜方法、電子デバイスの製造方法 | |
CN112779504B (zh) | 成膜装置及成膜方法 | |
JP2023105428A (ja) | 基板保持装置、静電チャックおよび基板保持方法 | |
JP2023038029A (ja) | 成膜装置 | |
JP2022180205A (ja) | 基板保持具、基板保持装置、成膜システム、及び電子デバイスの製造方法 | |
JP2023038027A (ja) | 成膜装置 | |
JPWO2008041293A1 (ja) | ワーク移送方法及び静電チャック装置並びに基板貼り合わせ方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |