KR102492876B1 - 소결체 - Google Patents

소결체 Download PDF

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Publication number
KR102492876B1
KR102492876B1 KR1020217020355A KR20217020355A KR102492876B1 KR 102492876 B1 KR102492876 B1 KR 102492876B1 KR 1020217020355 A KR1020217020355 A KR 1020217020355A KR 20217020355 A KR20217020355 A KR 20217020355A KR 102492876 B1 KR102492876 B1 KR 102492876B1
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KR
South Korea
Prior art keywords
sintered body
oxide
body according
eds
sem
Prior art date
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KR1020217020355A
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English (en)
Korean (ko)
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KR20210106462A (ko
Inventor
에미 가와시마
가즈요시 이노우에
마사시 오야마
마사토시 시바타
Original Assignee
이데미쓰 고산 가부시키가이샤
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Publication of KR20210106462A publication Critical patent/KR20210106462A/ko
Application granted granted Critical
Publication of KR102492876B1 publication Critical patent/KR102492876B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/549—Particle size related information the particle size being expressed by crystallite size or primary particle size
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/762—Cubic symmetry, e.g. beta-SiC
    • C04B2235/764—Garnet structure A3B2(CO4)3

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020217020355A 2018-12-28 2019-12-26 소결체 KR102492876B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-247815 2018-12-28
JP2018247815 2018-12-28
PCT/JP2019/051199 WO2020138319A1 (ja) 2018-12-28 2019-12-26 焼結体

Publications (2)

Publication Number Publication Date
KR20210106462A KR20210106462A (ko) 2021-08-30
KR102492876B1 true KR102492876B1 (ko) 2023-01-27

Family

ID=71127733

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217020355A KR102492876B1 (ko) 2018-12-28 2019-12-26 소결체

Country Status (5)

Country Link
JP (1) JP6788151B1 (zh)
KR (1) KR102492876B1 (zh)
CN (1) CN113195434B (zh)
TW (1) TWI725685B (zh)
WO (1) WO2020138319A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007063649A (ja) 2005-09-01 2007-03-15 Idemitsu Kosan Co Ltd スパッタリングターゲット及び透明導電膜
JP2016160120A (ja) 2015-02-27 2016-09-05 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
WO2017217529A1 (ja) 2016-06-17 2017-12-21 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
WO2018043323A1 (ja) 2016-08-31 2018-03-08 出光興産株式会社 新規ガーネット化合物、それを含有する焼結体及びスパッタリングターゲット

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101244092B1 (ko) * 2005-09-01 2013-03-18 이데미쓰 고산 가부시키가이샤 투명 도전막, 투명 전극, 및 전극 기판 및 그의 제조 방법
KR101627491B1 (ko) * 2007-07-06 2016-06-07 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결물체와 그 제조 방법, 타겟, 및 그것을 이용해 얻어지는 투명 도전막 및 투명 도전성 기재
KR20130080063A (ko) * 2008-06-06 2013-07-11 이데미쓰 고산 가부시키가이샤 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법
US8156419B2 (en) * 2008-07-17 2012-04-10 International Business Machines Corporation Intelligent preloads of views and asynchronous loading of models using the MVC design pattern
KR101658256B1 (ko) * 2008-12-15 2016-09-20 이데미쓰 고산 가부시키가이샤 복합 산화물 소결체 및 그것으로 이루어지는 스퍼터링 타겟
JP2014095144A (ja) * 2012-10-10 2014-05-22 Idemitsu Kosan Co Ltd スパッタリングターゲット
CN105246855B (zh) * 2013-11-29 2017-05-31 株式会社钢臂功科研 氧化物烧结体和溅射靶、以及其制造方法
CN115340360B (zh) * 2013-12-27 2023-06-27 出光兴产株式会社 氧化物烧结体、该烧结体的制造方法及溅射靶
JP7092746B2 (ja) * 2017-03-30 2022-06-28 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007063649A (ja) 2005-09-01 2007-03-15 Idemitsu Kosan Co Ltd スパッタリングターゲット及び透明導電膜
JP2016160120A (ja) 2015-02-27 2016-09-05 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
WO2017217529A1 (ja) 2016-06-17 2017-12-21 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
WO2018043323A1 (ja) 2016-08-31 2018-03-08 出光興産株式会社 新規ガーネット化合物、それを含有する焼結体及びスパッタリングターゲット

Also Published As

Publication number Publication date
KR20210106462A (ko) 2021-08-30
WO2020138319A1 (ja) 2020-07-02
TWI725685B (zh) 2021-04-21
CN113195434B (zh) 2023-08-08
TW202039401A (zh) 2020-11-01
JP6788151B1 (ja) 2020-11-18
JPWO2020138319A1 (ja) 2021-02-18
CN113195434A (zh) 2021-07-30

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