KR102482538B1 - 웨이퍼의 검사 방법 및 검사 장치 - Google Patents

웨이퍼의 검사 방법 및 검사 장치 Download PDF

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Publication number
KR102482538B1
KR102482538B1 KR1020207034675A KR20207034675A KR102482538B1 KR 102482538 B1 KR102482538 B1 KR 102482538B1 KR 1020207034675 A KR1020207034675 A KR 1020207034675A KR 20207034675 A KR20207034675 A KR 20207034675A KR 102482538 B1 KR102482538 B1 KR 102482538B1
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South Korea
Prior art keywords
wafer
intensity
defect
profile
inspection surface
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KR1020207034675A
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English (en)
Korean (ko)
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KR20210002708A (ko
Inventor
타츠야 오사다
시게루 다이고
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가부시키가이샤 사무코
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/18—Investigating the presence of flaws defects or foreign matter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws

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  • Biochemistry (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020207034675A 2018-08-09 2019-08-06 웨이퍼의 검사 방법 및 검사 장치 KR102482538B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-149990 2018-08-09
JP2018149990A JP7063181B2 (ja) 2018-08-09 2018-08-09 ウェーハの検査方法および検査装置
PCT/JP2019/030844 WO2020032005A1 (ja) 2018-08-09 2019-08-06 ウェーハの検査方法および検査装置

Publications (2)

Publication Number Publication Date
KR20210002708A KR20210002708A (ko) 2021-01-08
KR102482538B1 true KR102482538B1 (ko) 2022-12-28

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KR1020207034675A KR102482538B1 (ko) 2018-08-09 2019-08-06 웨이퍼의 검사 방법 및 검사 장치

Country Status (6)

Country Link
JP (1) JP7063181B2 (ja)
KR (1) KR102482538B1 (ja)
CN (1) CN112639451B (ja)
DE (1) DE112019003985T5 (ja)
TW (1) TWI702388B (ja)
WO (1) WO2020032005A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11125815B2 (en) * 2019-09-27 2021-09-21 Advanced Micro Devices, Inc. Electro-optic waveform analysis process
JP7215445B2 (ja) 2020-02-20 2023-01-31 株式会社デンソー 電池モジュール
US20210389126A1 (en) * 2020-06-12 2021-12-16 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Surface Profile Mapping for Evaluating III-N Device Performance and Yield
CN113644000B (zh) * 2021-08-09 2023-10-24 长鑫存储技术有限公司 晶圆检测方法与电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258555A (ja) 2006-03-24 2007-10-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの結晶欠陥検査方法及び装置
JP2010164487A (ja) 2009-01-16 2010-07-29 Tokyo Seimitsu Co Ltd 欠陥検査装置及び欠陥検査方法
JP2011033449A (ja) * 2009-07-31 2011-02-17 Sumco Corp ウェーハの欠陥検査方法及び欠陥検査装置
JP2011237302A (ja) 2010-05-11 2011-11-24 Sumco Corp ウェーハ欠陥検査装置及びウェーハ欠陥検査方法
JP2011237303A (ja) * 2010-05-11 2011-11-24 Sumco Corp ウェーハ欠陥検査装置及びウェーハ欠陥検査方法
US20180067042A1 (en) 2016-09-06 2018-03-08 Sensors Unlimited, Inc. Silicon article inspection systems and methods

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TW201024714A (en) * 2008-12-31 2010-07-01 Ind Tech Res Inst Apparatus and method for detecting cracks in silicon wafer
JP5559163B2 (ja) * 2009-05-29 2014-07-23 株式会社ロゼフテクノロジー 多結晶ウエハの検査方法
CN102648405B (zh) * 2009-11-20 2015-04-15 独立行政法人产业技术综合研究所 检查缺陷方法和装置、晶圆、半导体元件
KR101214806B1 (ko) * 2010-05-11 2012-12-24 가부시키가이샤 사무코 웨이퍼 결함 검사 장치 및 웨이퍼 결함 검사 방법
KR100989561B1 (ko) * 2010-06-10 2010-10-25 주식회사 창성에이스산업 Ｌｅｄ 및 웨이퍼 검사장치 및 이를 이용한 검사방법
DE102010026351B4 (de) * 2010-07-07 2012-04-26 Siltronic Ag Verfahren und Vorrichtung zur Untersuchung einer Halbleiterscheibe
JP5594254B2 (ja) 2011-08-09 2014-09-24 三菱電機株式会社 シリコン基板の検査装置、および検査方法
US9255894B2 (en) * 2012-11-09 2016-02-09 Kla-Tencor Corporation System and method for detecting cracks in a wafer
JP5825278B2 (ja) * 2013-02-21 2015-12-02 オムロン株式会社 欠陥検査装置および欠陥検査方法
CN104020178B (zh) * 2014-05-08 2016-09-28 晶澳太阳能有限公司 一种晶硅硅片缺陷检测设备的透光性检测单元
JP6531579B2 (ja) * 2015-09-10 2019-06-19 株式会社Sumco ウェーハ検査方法およびウェーハ検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258555A (ja) 2006-03-24 2007-10-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの結晶欠陥検査方法及び装置
JP2010164487A (ja) 2009-01-16 2010-07-29 Tokyo Seimitsu Co Ltd 欠陥検査装置及び欠陥検査方法
JP2011033449A (ja) * 2009-07-31 2011-02-17 Sumco Corp ウェーハの欠陥検査方法及び欠陥検査装置
JP2011237302A (ja) 2010-05-11 2011-11-24 Sumco Corp ウェーハ欠陥検査装置及びウェーハ欠陥検査方法
JP2011237303A (ja) * 2010-05-11 2011-11-24 Sumco Corp ウェーハ欠陥検査装置及びウェーハ欠陥検査方法
US20180067042A1 (en) 2016-09-06 2018-03-08 Sensors Unlimited, Inc. Silicon article inspection systems and methods

Also Published As

Publication number Publication date
CN112639451A (zh) 2021-04-09
TW202012916A (zh) 2020-04-01
KR20210002708A (ko) 2021-01-08
DE112019003985T5 (de) 2021-04-22
WO2020032005A1 (ja) 2020-02-13
JP7063181B2 (ja) 2022-05-09
TWI702388B (zh) 2020-08-21
CN112639451B (zh) 2024-04-30
JP2020026954A (ja) 2020-02-20

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