KR102475594B1 - 증착 마스크 및 그 제조 방법 - Google Patents
증착 마스크 및 그 제조 방법 Download PDFInfo
- Publication number
- KR102475594B1 KR102475594B1 KR1020200152538A KR20200152538A KR102475594B1 KR 102475594 B1 KR102475594 B1 KR 102475594B1 KR 1020200152538 A KR1020200152538 A KR 1020200152538A KR 20200152538 A KR20200152538 A KR 20200152538A KR 102475594 B1 KR102475594 B1 KR 102475594B1
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- South Korea
- Prior art keywords
- wavelength
- deposition
- substrate
- resist pattern
- deposition mask
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- 230000008021 deposition Effects 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005323 electroforming Methods 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 131
- 239000010410 layer Substances 0.000 description 85
- 239000000463 material Substances 0.000 description 41
- 238000001704 evaporation Methods 0.000 description 20
- 230000008020 evaporation Effects 0.000 description 19
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 238000003860 storage Methods 0.000 description 15
- 238000005401 electroluminescence Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000011364 vaporized material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- SQZYOZWYVFYNFV-UHFFFAOYSA-L iron(2+);disulfamate Chemical compound [Fe+2].NS([O-])(=O)=O.NS([O-])(=O)=O SQZYOZWYVFYNFV-UHFFFAOYSA-L 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2019-216576 | 2019-11-29 | ||
| JP2019216576A JP7454934B2 (ja) | 2019-11-29 | 2019-11-29 | 蒸着マスク及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210067887A KR20210067887A (ko) | 2021-06-08 |
| KR102475594B1 true KR102475594B1 (ko) | 2022-12-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200152538A KR102475594B1 (ko) | 2019-11-29 | 2020-11-16 | 증착 마스크 및 그 제조 방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7454934B2 (zh) |
| KR (1) | KR102475594B1 (zh) |
| CN (1) | CN112877640B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023006792A (ja) * | 2021-06-30 | 2023-01-18 | 株式会社ジャパンディスプレイ | 蒸着マスク |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009087840A (ja) | 2007-10-02 | 2009-04-23 | Seiko Epson Corp | 蒸着マスク、蒸着マスクの製造方法、有機ｅｌ素子、電子機器 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11222664A (ja) * | 1998-02-04 | 1999-08-17 | Matsushita Electric Ind Co Ltd | メタルマスク、このメタルマスクを用いた抵抗体の形成方法およびこのメタルマスクを用いた抵抗器の製造方法 |
| JP4369199B2 (ja) * | 2003-06-05 | 2009-11-18 | 九州日立マクセル株式会社 | 蒸着マスクとその製造方法 |
| KR20060015949A (ko) * | 2004-08-16 | 2006-02-21 | 엘지전자 주식회사 | 금속 패턴 형성 방법 |
| JP2007012970A (ja) * | 2005-07-01 | 2007-01-18 | Mejiro Precision:Kk | レジストパターンの断面形状を制御することができる露光装置及び露光方法 |
| US8465909B2 (en) * | 2009-11-04 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned masking for solar cell manufacture |
| WO2013039196A1 (ja) | 2011-09-16 | 2013-03-21 | 株式会社ブイ・テクノロジー | 蒸着マスク、蒸着マスクの製造方法及び薄膜パターン形成方法 |
| CN103797149B (zh) * | 2011-09-16 | 2017-05-24 | 株式会社V技术 | 蒸镀掩膜、蒸镀掩膜的制造方法及薄膜图案形成方法 |
| JP5958804B2 (ja) | 2012-03-30 | 2016-08-02 | 株式会社ブイ・テクノロジー | 蒸着マスク、蒸着マスクの製造方法及び有機ｅｌ表示装置の製造方法 |
| JP2016152182A (ja) * | 2015-02-19 | 2016-08-22 | コニカミノルタ株式会社 | 透明導電膜、透明導電膜の製造方法、及び、電子機器 |
| KR102050860B1 (ko) * | 2015-08-05 | 2019-12-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 유기 발광 다이오드 제조용 섀도 마스크 |
| KR102388724B1 (ko) | 2015-08-21 | 2022-04-21 | 삼성디스플레이 주식회사 | 증착용 마스크 제조 방법 |
| JP6443457B2 (ja) * | 2015-09-30 | 2018-12-26 | 大日本印刷株式会社 | 蒸着マスクおよび蒸着マスクの製造方法 |
| JP2019094528A (ja) * | 2017-11-21 | 2019-06-20 | 株式会社ジャパンディスプレイ | 蒸着マスク、蒸着マスクの製造方法、及び表示装置の製造方法 |
-
2019
- 2019-11-29 JP JP2019216576A patent/JP7454934B2/ja active Active
-
2020
- 2020-11-16 KR KR1020200152538A patent/KR102475594B1/ko active IP Right Review Request
- 2020-11-19 CN CN202011303002.XA patent/CN112877640B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009087840A (ja) | 2007-10-02 | 2009-04-23 | Seiko Epson Corp | 蒸着マスク、蒸着マスクの製造方法、有機ｅｌ素子、電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7454934B2 (ja) | 2024-03-25 |
| CN112877640B (zh) | 2023-09-15 |
| KR20210067887A (ko) | 2021-06-08 |
| CN112877640A (zh) | 2021-06-01 |
| JP2021085083A (ja) | 2021-06-03 |
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| GRNT | Written decision to grant | ||
| Z131 | Decision taken on request for patent cancellation [new post grant opposition system as of 20170301] |