KR102473872B1 - 라이닝 어셈블리, 반응 챔버 및 반도체 가공 디바이스 - Google Patents

라이닝 어셈블리, 반응 챔버 및 반도체 가공 디바이스 Download PDF

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KR102473872B1
KR102473872B1 KR1020217011672A KR20217011672A KR102473872B1 KR 102473872 B1 KR102473872 B1 KR 102473872B1 KR 1020217011672 A KR1020217011672 A KR 1020217011672A KR 20217011672 A KR20217011672 A KR 20217011672A KR 102473872 B1 KR102473872 B1 KR 102473872B1
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KR20210063374A (ko
Inventor
주에 호우
위에 란
칭 쉬
루 짱
지안셩 리우
Original Assignee
베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디.
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Priority claimed from CN201821806205.9U external-priority patent/CN209133451U/zh
Priority claimed from CN201811305127.9A external-priority patent/CN109273342B/zh
Application filed by 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. filed Critical 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020217011672A 2018-11-02 2019-10-28 라이닝 어셈블리, 반응 챔버 및 반도체 가공 디바이스 Active KR102473872B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201821806205.9 2018-11-02
CN201811305127.9 2018-11-02
CN201821806205.9U CN209133451U (zh) 2018-11-02 2018-11-02 内衬组件、反应腔室及半导体加工设备
CN201811305127.9A CN109273342B (zh) 2018-11-02 2018-11-02 内衬组件、反应腔室及半导体加工设备
PCT/CN2019/113723 WO2020088413A1 (zh) 2018-11-02 2019-10-28 内衬组件、反应腔室及半导体加工设备

Publications (2)

Publication Number Publication Date
KR20210063374A KR20210063374A (ko) 2021-06-01
KR102473872B1 true KR102473872B1 (ko) 2022-12-06

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KR1020217011672A Active KR102473872B1 (ko) 2018-11-02 2019-10-28 라이닝 어셈블리, 반응 챔버 및 반도체 가공 디바이스

Country Status (5)

Country Link
JP (1) JP7295946B2 (https=)
KR (1) KR102473872B1 (https=)
SG (1) SG11202104119PA (https=)
TW (1) TWI739194B (https=)
WO (1) WO2020088413A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114361000B (zh) * 2022-01-04 2024-04-16 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN114420526B (zh) * 2022-01-18 2023-09-12 江苏天芯微半导体设备有限公司 一种衬套及晶圆预处理装置
CN115083964B (zh) * 2022-06-30 2025-05-23 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及工艺方法
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
AU6977998A (en) * 1997-04-21 1998-11-13 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
US6406590B1 (en) * 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
CN101399197B (zh) * 2007-09-30 2011-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 一种腔室的衬
CN103882390B (zh) * 2012-12-20 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及磁控溅射设备
CN106548914B (zh) * 2015-09-17 2018-10-30 中微半导体设备(上海)有限公司 一种等离子体处理设备及其清洗系统和方法
CN206432234U (zh) * 2016-12-23 2017-08-22 江苏鲁汶仪器有限公司 等离子体刻蚀机反应腔的内衬及等离子体刻蚀机反应腔
CN209133451U (zh) * 2018-11-02 2019-07-19 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备
CN109273342B (zh) * 2018-11-02 2024-07-23 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备

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Publication number Publication date
SG11202104119PA (en) 2021-05-28
JP7295946B2 (ja) 2023-06-21
TWI739194B (zh) 2021-09-11
TW202044317A (zh) 2020-12-01
WO2020088413A1 (zh) 2020-05-07
JP2022506293A (ja) 2022-01-17
KR20210063374A (ko) 2021-06-01

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