SG11202104119PA - Liner assembly, reaction chamber and semiconductor processing apparatus - Google Patents

Liner assembly, reaction chamber and semiconductor processing apparatus

Info

Publication number
SG11202104119PA
SG11202104119PA SG11202104119PA SG11202104119PA SG11202104119PA SG 11202104119P A SG11202104119P A SG 11202104119PA SG 11202104119P A SG11202104119P A SG 11202104119PA SG 11202104119P A SG11202104119P A SG 11202104119PA SG 11202104119P A SG11202104119P A SG 11202104119PA
Authority
SG
Singapore
Prior art keywords
processing apparatus
reaction chamber
semiconductor processing
liner assembly
liner
Prior art date
Application number
SG11202104119PA
Other languages
English (en)
Inventor
Jue Hou
Yue Lan
qing She
Lu Zhang
Jiansheng Liu
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201821806205.9U external-priority patent/CN209133451U/zh
Priority claimed from CN201811305127.9A external-priority patent/CN109273342B/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202104119PA publication Critical patent/SG11202104119PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG11202104119PA 2018-11-02 2019-10-28 Liner assembly, reaction chamber and semiconductor processing apparatus SG11202104119PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201821806205.9U CN209133451U (zh) 2018-11-02 2018-11-02 内衬组件、反应腔室及半导体加工设备
CN201811305127.9A CN109273342B (zh) 2018-11-02 2018-11-02 内衬组件、反应腔室及半导体加工设备
PCT/CN2019/113723 WO2020088413A1 (zh) 2018-11-02 2019-10-28 内衬组件、反应腔室及半导体加工设备

Publications (1)

Publication Number Publication Date
SG11202104119PA true SG11202104119PA (en) 2021-05-28

Family

ID=70463434

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202104119PA SG11202104119PA (en) 2018-11-02 2019-10-28 Liner assembly, reaction chamber and semiconductor processing apparatus

Country Status (5)

Country Link
JP (1) JP7295946B2 (https=)
KR (1) KR102473872B1 (https=)
SG (1) SG11202104119PA (https=)
TW (1) TWI739194B (https=)
WO (1) WO2020088413A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114361000B (zh) * 2022-01-04 2024-04-16 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN114420526B (zh) * 2022-01-18 2023-09-12 江苏天芯微半导体设备有限公司 一种衬套及晶圆预处理装置
CN115083964B (zh) * 2022-06-30 2025-05-23 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及工艺方法
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
AU6977998A (en) * 1997-04-21 1998-11-13 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
US6406590B1 (en) * 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
CN101399197B (zh) * 2007-09-30 2011-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 一种腔室的衬
CN103882390B (zh) * 2012-12-20 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及磁控溅射设备
CN106548914B (zh) * 2015-09-17 2018-10-30 中微半导体设备(上海)有限公司 一种等离子体处理设备及其清洗系统和方法
CN206432234U (zh) * 2016-12-23 2017-08-22 江苏鲁汶仪器有限公司 等离子体刻蚀机反应腔的内衬及等离子体刻蚀机反应腔
CN209133451U (zh) * 2018-11-02 2019-07-19 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备
CN109273342B (zh) * 2018-11-02 2024-07-23 北京北方华创微电子装备有限公司 内衬组件、反应腔室及半导体加工设备

Also Published As

Publication number Publication date
JP7295946B2 (ja) 2023-06-21
TWI739194B (zh) 2021-09-11
TW202044317A (zh) 2020-12-01
WO2020088413A1 (zh) 2020-05-07
JP2022506293A (ja) 2022-01-17
KR20210063374A (ko) 2021-06-01
KR102473872B1 (ko) 2022-12-06

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