SG11202102989RA - Electrostatic chuck and reaction chamber - Google Patents

Electrostatic chuck and reaction chamber

Info

Publication number
SG11202102989RA
SG11202102989RA SG11202102989RA SG11202102989RA SG11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA SG 11202102989R A SG11202102989R A SG 11202102989RA
Authority
SG
Singapore
Prior art keywords
reaction chamber
electrostatic chuck
chuck
electrostatic
chamber
Prior art date
Application number
SG11202102989RA
Inventor
Qiwei Huang
Quanyu Shi
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201821648321.2U external-priority patent/CN208923079U/en
Priority claimed from CN201811183845.3A external-priority patent/CN111048460A/en
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202102989RA publication Critical patent/SG11202102989RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
SG11202102989RA 2018-10-11 2019-09-19 Electrostatic chuck and reaction chamber SG11202102989RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201821648321.2U CN208923079U (en) 2018-10-11 2018-10-11 Electrostatic chuck and reaction chamber
CN201811183845.3A CN111048460A (en) 2018-10-11 2018-10-11 Electrostatic chuck and reaction chamber
PCT/CN2019/106684 WO2020073779A1 (en) 2018-10-11 2019-09-19 Electrostatic chuck and reaction cavity

Publications (1)

Publication Number Publication Date
SG11202102989RA true SG11202102989RA (en) 2021-04-29

Family

ID=70164227

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102989RA SG11202102989RA (en) 2018-10-11 2019-09-19 Electrostatic chuck and reaction chamber

Country Status (6)

Country Link
US (1) US11837491B2 (en)
JP (1) JP7279156B2 (en)
KR (1) KR102434283B1 (en)
SG (1) SG11202102989RA (en)
TW (1) TWI725549B (en)
WO (1) WO2020073779A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN213951334U (en) * 2020-10-26 2021-08-13 北京北方华创微电子装备有限公司 Wafer bearing mechanism and semiconductor process equipment
CN112331607B (en) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing apparatus
CN115142045B (en) * 2021-03-29 2023-12-19 鑫天虹(厦门)科技有限公司 Bearing disc capable of accurately adjusting temperature and thin film deposition device
WO2024091389A1 (en) * 2022-10-24 2024-05-02 Lam Research Corporation Heat flow control in a processing tool

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297771B2 (en) * 1993-11-05 2002-07-02 ソニー株式会社 Semiconductor manufacturing equipment
JPH09213781A (en) * 1996-02-01 1997-08-15 Tokyo Electron Ltd Stage structure and processor using it
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
JP2000299371A (en) * 1999-04-12 2000-10-24 Taiheiyo Cement Corp Electrostatic chucking device
JP4236329B2 (en) * 1999-04-15 2009-03-11 日本碍子株式会社 Plasma processing equipment
JP2001068538A (en) * 1999-06-21 2001-03-16 Tokyo Electron Ltd Electrode structure, mounting base structure, plasma treatment system, and processing unit
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP2006165475A (en) * 2004-12-10 2006-06-22 Nippon Dennetsu Co Ltd Heating and cooling structure of board to be treated
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP5237151B2 (en) 2009-02-23 2013-07-17 三菱重工業株式会社 Substrate support for plasma processing equipment
WO2013049589A1 (en) * 2011-09-30 2013-04-04 Applied Materials, Inc. Electrostatic chuck with temperature control
JP5807032B2 (en) 2012-03-21 2015-11-10 日本碍子株式会社 Heating apparatus and semiconductor manufacturing apparatus
CN104377155B (en) * 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 Electrostatic chuck and plasma processing device
US9847240B2 (en) * 2014-02-12 2017-12-19 Axcelis Technologies, Inc. Constant mass flow multi-level coolant path electrostatic chuck
JP2016082216A (en) * 2014-10-09 2016-05-16 東京エレクトロン株式会社 Temperature control mechanism for workpiece, and method for selectively etching nitride film from multilayer film
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
CN208923079U (en) * 2018-10-11 2019-05-31 北京北方华创微电子装备有限公司 Electrostatic chuck and reaction chamber

Also Published As

Publication number Publication date
WO2020073779A1 (en) 2020-04-16
US20220051923A1 (en) 2022-02-17
KR20210041080A (en) 2021-04-14
KR102434283B1 (en) 2022-08-19
JP7279156B2 (en) 2023-05-22
US11837491B2 (en) 2023-12-05
TW202015173A (en) 2020-04-16
TWI725549B (en) 2021-04-21
JP2022502861A (en) 2022-01-11

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