KR101931324B9 - 셀프 플라즈마 챔버의 오염 억제 장치 - Google Patents

셀프 플라즈마 챔버의 오염 억제 장치

Info

Publication number
KR101931324B9
KR101931324B9 KR1020170117900A KR20170117900A KR101931324B9 KR 101931324 B9 KR101931324 B9 KR 101931324B9 KR 1020170117900 A KR1020170117900 A KR 1020170117900A KR 20170117900 A KR20170117900 A KR 20170117900A KR 101931324 B9 KR101931324 B9 KR 101931324B9
Authority
KR
South Korea
Prior art keywords
plasma chamber
delay apparatus
self plasma
contaminating
chamber contaminating
Prior art date
Application number
KR1020170117900A
Other languages
English (en)
Other versions
KR101931324B1 (ko
Inventor
차동호
Original Assignee
(주)나노텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)나노텍 filed Critical (주)나노텍
Priority to KR1020170117900A priority Critical patent/KR101931324B1/ko
Priority to PCT/KR2018/008999 priority patent/WO2019054635A1/ko
Priority to US16/646,408 priority patent/US11990320B2/en
Priority to CN201880060145.7A priority patent/CN111279452B/zh
Application granted granted Critical
Publication of KR101931324B1 publication Critical patent/KR101931324B1/ko
Publication of KR101931324B9 publication Critical patent/KR101931324B9/ko
Priority to US18/634,508 priority patent/US20240258077A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020170117900A 2017-09-14 2017-09-14 셀프 플라즈마 챔버의 오염 억제 장치 KR101931324B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020170117900A KR101931324B1 (ko) 2017-09-14 2017-09-14 셀프 플라즈마 챔버의 오염 억제 장치
PCT/KR2018/008999 WO2019054635A1 (ko) 2017-09-14 2018-08-07 셀프 플라즈마 챔버의 오염 억제 장치
US16/646,408 US11990320B2 (en) 2017-09-14 2018-08-07 Apparatus for preventing contamination of self-plasma chamber
CN201880060145.7A CN111279452B (zh) 2017-09-14 2018-08-07 自等离子体腔体的污染抑制装置
US18/634,508 US20240258077A1 (en) 2017-09-14 2024-04-12 Apparatus for preventing contamination of self-plasma chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170117900A KR101931324B1 (ko) 2017-09-14 2017-09-14 셀프 플라즈마 챔버의 오염 억제 장치

Publications (2)

Publication Number Publication Date
KR101931324B1 KR101931324B1 (ko) 2018-12-20
KR101931324B9 true KR101931324B9 (ko) 2023-07-05

Family

ID=64952624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170117900A KR101931324B1 (ko) 2017-09-14 2017-09-14 셀프 플라즈마 챔버의 오염 억제 장치

Country Status (4)

Country Link
US (2) US11990320B2 (ko)
KR (1) KR101931324B1 (ko)
CN (1) CN111279452B (ko)
WO (1) WO2019054635A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114381718B (zh) * 2022-01-20 2024-03-26 成都纽曼和瑞微波技术有限公司 一种微波等离子体化学气相沉积设备
CN115488505A (zh) * 2022-09-27 2022-12-20 哈尔滨工业大学（威海） 一种解决镁合金负压激光焊接能量屏蔽的电磁装置及方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2788854B1 (fr) * 1999-01-22 2001-05-04 Cit Alcatel Systeme et procede d'identification d'effluents gazeux, equipement pourvu d'un tel systeme
US6867859B1 (en) * 1999-08-03 2005-03-15 Lightwind Corporation Inductively coupled plasma spectrometer for process diagnostics and control
WO2001044790A1 (en) * 1999-12-15 2001-06-21 Stevens Institute Of Technology Segmented electrode capillary discharge, non-thermal plasma apparatus and process for promoting chemical reactions
US6685803B2 (en) * 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
FR2887072A1 (fr) * 2005-06-08 2006-12-15 Alcatel Sa Systeme spectographique ameliore avec source plasma
CN101150909B (zh) * 2006-09-22 2010-05-12 中微半导体设备(上海)有限公司 等离子体约束装置
KR100905128B1 (ko) * 2008-07-29 2009-06-30 주식회사 나노텍 셀프 플라즈마 챔버의 오염 방지 장치 및 방법
US20100224322A1 (en) * 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
JP5622751B2 (ja) * 2010-01-25 2014-11-12 株式会社日立ハイテクノロジーズ 質量分析装置
KR20110103723A (ko) * 2010-03-15 2011-09-21 삼성전자주식회사 공정 모니터링 장치와, 이를 이용한 공정 모니터링 방법
KR101273922B1 (ko) * 2012-07-17 2013-06-11 김남식 능동형 오염방지장치를 갖는 셀프 플라즈마 발광분광기 및 이를 이용한 플라즈마 챔버의 오염 방지 방법
US20160049279A1 (en) 2014-08-14 2016-02-18 Allied Techfinders Co., Ltd. Plasma device
KR101695748B1 (ko) * 2015-07-20 2017-01-23 (주)얼라이드 테크 파인더즈 플라즈마 장치
DE102015122155B4 (de) * 2015-12-17 2018-03-08 Jan-Christoph Wolf Verwendung einer Ionisierungsvorrichtung
KR101789582B1 (ko) * 2016-01-20 2017-10-26 삼성디스플레이 주식회사 하향식 기판 레이저 에칭 장치
CN106231772B (zh) * 2016-08-19 2020-07-17 西安电子科技大学 基于调制射频的动态等离子体产生装置
US10319649B2 (en) * 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring

Also Published As

Publication number Publication date
US20240258077A1 (en) 2024-08-01
US11990320B2 (en) 2024-05-21
KR101931324B1 (ko) 2018-12-20
WO2019054635A1 (ko) 2019-03-21
CN111279452B (zh) 2023-04-14
US20200273676A1 (en) 2020-08-27
CN111279452A (zh) 2020-06-12

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