KR102440864B1 - 광 산란을 튜닝하기 위한 다공성 미크론 크기의 입자들 - Google Patents
광 산란을 튜닝하기 위한 다공성 미크론 크기의 입자들 Download PDFInfo
- Publication number
- KR102440864B1 KR102440864B1 KR1020207021173A KR20207021173A KR102440864B1 KR 102440864 B1 KR102440864 B1 KR 102440864B1 KR 1020207021173 A KR1020207021173 A KR 1020207021173A KR 20207021173 A KR20207021173 A KR 20207021173A KR 102440864 B1 KR102440864 B1 KR 102440864B1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- micron
- porous structure
- light emitting
- sub
- Prior art date
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- 239000002245 particle Substances 0.000 title claims abstract description 101
- 238000000149 argon plasma sintering Methods 0.000 title claims abstract description 58
- 239000011148 porous material Substances 0.000 claims abstract description 75
- 229920000642 polymer Polymers 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 230000007423 decrease Effects 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000011324 bead Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000005286 illumination Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000005373 porous glass Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- 229920001709 polysilazane Polymers 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 62
- 239000011358 absorbing material Substances 0.000 abstract description 49
- 239000010410 layer Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 230000008859 change Effects 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000003086 colorant Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000002346 layers by function Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000008187 granular material Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- -1 stud bumps Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Elements Other Than Lenses (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/852,822 US10761246B2 (en) | 2017-12-22 | 2017-12-22 | Light emitting semiconductor device having polymer-filled sub-micron pores in porous structure to tune light scattering |
US15/852,822 | 2017-12-22 | ||
EP18163955 | 2018-03-26 | ||
EP18163955.0 | 2018-03-26 | ||
PCT/US2018/065937 WO2019126000A1 (en) | 2017-12-22 | 2018-12-17 | Porous micron-sized particles to tune light scattering |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200099190A KR20200099190A (ko) | 2020-08-21 |
KR102440864B1 true KR102440864B1 (ko) | 2022-09-07 |
Family
ID=64901675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020207021173A KR102440864B1 (ko) | 2017-12-22 | 2018-12-17 | 광 산란을 튜닝하기 위한 다공성 미크론 크기의 입자들 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3729526A1 (zh) |
JP (1) | JP7224355B2 (zh) |
KR (1) | KR102440864B1 (zh) |
CN (1) | CN111712936B (zh) |
TW (1) | TWI706165B (zh) |
WO (1) | WO2019126000A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7418330B2 (ja) * | 2017-12-21 | 2024-01-19 | ルミレッズ ホールディング ベーフェー | 照明デバイス |
US11189757B2 (en) * | 2019-12-12 | 2021-11-30 | Lumileds Llc | Light emitting diodes with reflective sidewalls comprising porous particles |
CN114512588B (zh) * | 2022-02-25 | 2023-06-16 | 苏州芯聚半导体有限公司 | 微发光二极管结构及制备方法、显示面板 |
Citations (6)
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US20050106377A1 (en) | 2003-11-18 | 2005-05-19 | Koestner Roland J. | Anti-glare optical film for display devices |
US20050245018A1 (en) | 2001-10-31 | 2005-11-03 | Georg Bogner | Optoelectronic component |
JP2010523007A (ja) | 2007-03-30 | 2010-07-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電磁放射を放出するオプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
JP2010211027A (ja) | 2009-03-11 | 2010-09-24 | Dic Corp | モアレ縞抑制フィルム、及びモアレ縞抑制機能付きプリズムシート |
US20130207148A1 (en) | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
US20150346397A1 (en) | 2012-09-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Optoelectronic device |
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JP2003131001A (ja) * | 2001-05-25 | 2003-05-08 | Shipley Co Llc | 多孔性光学物質 |
TWI280673B (en) * | 2004-09-22 | 2007-05-01 | Sharp Kk | Optical semiconductor device, optical communication device, and electronic equipment |
JP2006229259A (ja) * | 2006-05-30 | 2006-08-31 | Kyocera Corp | 発光装置 |
JP5170623B2 (ja) | 2007-08-08 | 2013-03-27 | スタンレー電気株式会社 | Led光源 |
RU2484555C2 (ru) | 2008-01-15 | 2013-06-10 | Конинклейке Филипс Электроникс Н.В. | Рассеяние света регулируемой пористостью в оптической керамике для светоизлучающих диодов |
CN101661983B (zh) * | 2008-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | 发光二极管及其制备方法 |
CN102471521B (zh) * | 2009-08-12 | 2016-08-24 | 皇家飞利浦电子股份有限公司 | 光学组成 |
DE102010034915A1 (de) | 2010-08-20 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Streukörper |
KR101926204B1 (ko) * | 2010-10-20 | 2018-12-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 나노공극형 중합체 층을 포함하는 광대역 반경면 미러 필름 |
JP2014010894A (ja) | 2012-06-27 | 2014-01-20 | Okano Electric Wire Co Ltd | Led照明装置 |
TW201616689A (zh) * | 2014-06-25 | 2016-05-01 | 皇家飛利浦有限公司 | 經封裝之波長轉換發光裝置 |
JP2016037483A (ja) | 2014-08-11 | 2016-03-22 | シャープ株式会社 | 二核錯体およびそれを用いた発光素子、色変換基板、電子機器 |
DE102014112681A1 (de) | 2014-09-03 | 2016-03-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Blitzlicht |
EP3197981A1 (en) * | 2014-09-23 | 2017-08-02 | Philips Lighting Holding B.V. | Encapsulated materials in porous particles |
JP2016081040A (ja) | 2014-10-21 | 2016-05-16 | パナソニックIpマネジメント株式会社 | 光反射材料、ならびに光反射材料を用いた発光装置 |
US9774010B2 (en) * | 2014-10-21 | 2017-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Light reflective material and light-emitting device |
WO2016139954A1 (en) * | 2015-03-05 | 2016-09-09 | Nichia Corporation | Light emitting device |
JP6920859B2 (ja) * | 2016-04-04 | 2021-08-18 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
JP2017191875A (ja) | 2016-04-14 | 2017-10-19 | 株式会社小糸製作所 | 発光モジュール |
-
2018
- 2018-12-17 EP EP18827330.4A patent/EP3729526A1/en active Pending
- 2018-12-17 JP JP2020534969A patent/JP7224355B2/ja active Active
- 2018-12-17 WO PCT/US2018/065937 patent/WO2019126000A1/en unknown
- 2018-12-17 KR KR1020207021173A patent/KR102440864B1/ko active IP Right Grant
- 2018-12-17 CN CN201880090105.7A patent/CN111712936B/zh active Active
- 2018-12-22 TW TW107146682A patent/TWI706165B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050245018A1 (en) | 2001-10-31 | 2005-11-03 | Georg Bogner | Optoelectronic component |
US20050106377A1 (en) | 2003-11-18 | 2005-05-19 | Koestner Roland J. | Anti-glare optical film for display devices |
JP2010523007A (ja) | 2007-03-30 | 2010-07-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電磁放射を放出するオプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
JP2010211027A (ja) | 2009-03-11 | 2010-09-24 | Dic Corp | モアレ縞抑制フィルム、及びモアレ縞抑制機能付きプリズムシート |
US20130207148A1 (en) | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
US20150346397A1 (en) | 2012-09-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Optoelectronic device |
Also Published As
Publication number | Publication date |
---|---|
CN111712936A (zh) | 2020-09-25 |
KR20200099190A (ko) | 2020-08-21 |
JP2021508179A (ja) | 2021-02-25 |
CN111712936B (zh) | 2023-10-20 |
EP3729526A1 (en) | 2020-10-28 |
TWI706165B (zh) | 2020-10-01 |
JP7224355B2 (ja) | 2023-02-17 |
TW201937205A (zh) | 2019-09-16 |
WO2019126000A1 (en) | 2019-06-27 |
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