KR102435141B1 - 디바이스-상관 오버레이 계측을 위한 시스템 및 방법 - Google Patents

디바이스-상관 오버레이 계측을 위한 시스템 및 방법 Download PDF

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KR102435141B1
KR102435141B1 KR1020207019440A KR20207019440A KR102435141B1 KR 102435141 B1 KR102435141 B1 KR 102435141B1 KR 1020207019440 A KR1020207019440 A KR 1020207019440A KR 20207019440 A KR20207019440 A KR 20207019440A KR 102435141 B1 KR102435141 B1 KR 102435141B1
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South Korea
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layer
pattern
features
overlay
additional
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Korean (ko)
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KR20200086748A (ko
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프랑크 라스케
울리히 폴만
스테판 아이링
나다브 구트만
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electromagnetism (AREA)
  • Polyamides (AREA)
KR1020207019440A 2017-12-07 2018-12-06 디바이스-상관 오버레이 계측을 위한 시스템 및 방법 Active KR102435141B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762595987P 2017-12-07 2017-12-07
US62/595,987 2017-12-07
US16/009,939 US10474040B2 (en) 2017-12-07 2018-06-15 Systems and methods for device-correlated overlay metrology
US16/009,939 2018-06-15
PCT/US2018/064145 WO2019113262A1 (en) 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology

Publications (2)

Publication Number Publication Date
KR20200086748A KR20200086748A (ko) 2020-07-17
KR102435141B1 true KR102435141B1 (ko) 2022-08-22

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Application Number Title Priority Date Filing Date
KR1020207019440A Active KR102435141B1 (ko) 2017-12-07 2018-12-06 디바이스-상관 오버레이 계측을 위한 시스템 및 방법

Country Status (8)

Country Link
US (1) US10474040B2 (https=)
EP (1) EP3721294B1 (https=)
JP (1) JP7118152B2 (https=)
KR (1) KR102435141B1 (https=)
CN (1) CN111433676B (https=)
SG (1) SG11202002413UA (https=)
TW (1) TWI781259B (https=)
WO (1) WO2019113262A1 (https=)

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US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11221561B2 (en) * 2020-01-14 2022-01-11 Kla Corporation System and method for wafer-by-wafer overlay feedforward and lot-to-lot feedback control
CN111458984A (zh) * 2020-03-13 2020-07-28 华中科技大学 一种套刻标记及测量配置的分步优化方法
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11556738B2 (en) * 2020-10-01 2023-01-17 Kla Corporation System and method for determining target feature focus in image-based overlay metrology
US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US12085385B2 (en) 2021-10-06 2024-09-10 Kla Corporation Design-assisted large field of view metrology
KR102755839B1 (ko) * 2021-10-21 2025-01-15 케이엘에이 코포레이션 개선된 오버레이 오차 계측을 위한 유도 변위
EP4202552B1 (en) 2021-12-24 2024-04-17 Imec VZW Method and structure for determining an overlay error
TWI809929B (zh) * 2022-04-08 2023-07-21 南亞科技股份有限公司 具有疊對標記的半導體元件結構
US12354970B2 (en) 2022-04-08 2025-07-08 Nanya Technology Corporation Semiconductor device structure with overlay mark
US12243832B2 (en) 2022-04-08 2025-03-04 Nanya Technology Corporation Method for manufacturing semiconductor device structure with overlay marks
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement

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JP2017040941A (ja) 2000-08-30 2017-02-23 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
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US20050068515A1 (en) * 2003-09-30 2005-03-31 Lothar Bauch Method for detecting positioning errors of circuit patterns during the transfer by means of a mask into layers of a substrate of a semiconductor wafer
JP2009510770A (ja) * 2005-09-30 2009-03-12 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド オーバーレイ精度とパターン配置誤差とを同時に測定する方法
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Also Published As

Publication number Publication date
WO2019113262A1 (en) 2019-06-13
SG11202002413UA (en) 2020-06-29
TWI781259B (zh) 2022-10-21
TW201935148A (zh) 2019-09-01
CN111433676B (zh) 2022-08-05
EP3721294B1 (en) 2025-05-28
US20190179231A1 (en) 2019-06-13
KR20200086748A (ko) 2020-07-17
JP7118152B2 (ja) 2022-08-15
EP3721294A1 (en) 2020-10-14
JP2021505959A (ja) 2021-02-18
EP3721294A4 (en) 2021-09-01
CN111433676A (zh) 2020-07-17
US10474040B2 (en) 2019-11-12

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