SG11202002413UA - Systems and methods for device-correlated overlay metrology - Google Patents
Systems and methods for device-correlated overlay metrologyInfo
- Publication number
- SG11202002413UA SG11202002413UA SG11202002413UA SG11202002413UA SG11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA
- Authority
- SG
- Singapore
- Prior art keywords
- systems
- methods
- overlay metrology
- correlated overlay
- correlated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electromagnetism (AREA)
- Polyamides (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762595987P | 2017-12-07 | 2017-12-07 | |
| US16/009,939 US10474040B2 (en) | 2017-12-07 | 2018-06-15 | Systems and methods for device-correlated overlay metrology |
| PCT/US2018/064145 WO2019113262A1 (en) | 2017-12-07 | 2018-12-06 | Systems and methods for device-correlated overlay metrology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202002413UA true SG11202002413UA (en) | 2020-06-29 |
Family
ID=66696697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202002413UA SG11202002413UA (en) | 2017-12-07 | 2018-12-06 | Systems and methods for device-correlated overlay metrology |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10474040B2 (https=) |
| EP (1) | EP3721294B1 (https=) |
| JP (1) | JP7118152B2 (https=) |
| KR (1) | KR102435141B1 (https=) |
| CN (1) | CN111433676B (https=) |
| SG (1) | SG11202002413UA (https=) |
| TW (1) | TWI781259B (https=) |
| WO (1) | WO2019113262A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10964566B2 (en) * | 2018-06-29 | 2021-03-30 | Taiwan Semiconductor Manufacturing Go., Ltd. | Machine learning on overlay virtual metrology |
| US11073768B2 (en) * | 2019-06-26 | 2021-07-27 | Kla Corporation | Metrology target for scanning metrology |
| US11914290B2 (en) * | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11221561B2 (en) * | 2020-01-14 | 2022-01-11 | Kla Corporation | System and method for wafer-by-wafer overlay feedforward and lot-to-lot feedback control |
| CN111458984A (zh) * | 2020-03-13 | 2020-07-28 | 华中科技大学 | 一种套刻标记及测量配置的分步优化方法 |
| CN115428139B (zh) * | 2020-04-15 | 2024-04-12 | 科磊股份有限公司 | 可用于测量半导体装置偏移的具有装置级特征的偏移目标 |
| US11300405B2 (en) * | 2020-08-03 | 2022-04-12 | Kla Corporation | Grey-mode scanning scatterometry overlay metrology |
| US11556738B2 (en) * | 2020-10-01 | 2023-01-17 | Kla Corporation | System and method for determining target feature focus in image-based overlay metrology |
| US11460783B2 (en) * | 2021-01-07 | 2022-10-04 | Kla Corporation | System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target |
| US11703767B2 (en) | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11720031B2 (en) | 2021-06-28 | 2023-08-08 | Kla Corporation | Overlay design for electron beam and scatterometry overlay measurements |
| US12085385B2 (en) | 2021-10-06 | 2024-09-10 | Kla Corporation | Design-assisted large field of view metrology |
| KR102755839B1 (ko) * | 2021-10-21 | 2025-01-15 | 케이엘에이 코포레이션 | 개선된 오버레이 오차 계측을 위한 유도 변위 |
| EP4202552B1 (en) | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
| TWI809929B (zh) * | 2022-04-08 | 2023-07-21 | 南亞科技股份有限公司 | 具有疊對標記的半導體元件結構 |
| US12354970B2 (en) | 2022-04-08 | 2025-07-08 | Nanya Technology Corporation | Semiconductor device structure with overlay mark |
| US12243832B2 (en) | 2022-04-08 | 2025-03-04 | Nanya Technology Corporation | Method for manufacturing semiconductor device structure with overlay marks |
| US20240337952A1 (en) * | 2023-04-04 | 2024-10-10 | Kla Corporation | System and method for determining overlay measurement of a scanning target |
| US20250297855A1 (en) * | 2024-03-21 | 2025-09-25 | Kla Corporation | System and method for device-like overlay targets measurement |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW588414B (en) | 2000-06-08 | 2004-05-21 | Toshiba Corp | Alignment method, overlap inspecting method and mask |
| JP5180419B2 (ja) | 2000-08-30 | 2013-04-10 | ケーエルエー−テンカー・コーポレーション | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US6432591B1 (en) * | 2000-08-30 | 2002-08-13 | Micron Technology, Inc. | Overlay target design method with pitch determination to minimize impact of lens aberrations |
| US6486954B1 (en) * | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| US20030002043A1 (en) | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US6949462B1 (en) * | 2002-04-04 | 2005-09-27 | Nanometrics Incorporated | Measuring an alignment target with multiple polarization states |
| SG120958A1 (en) * | 2002-11-01 | 2006-04-26 | Asml Netherlands Bv | Inspection method and device manufacturing method |
| WO2004090980A2 (en) * | 2003-04-08 | 2004-10-21 | Aoti Operating Company, Inc. | Overlay metrology mark |
| DE10345466A1 (de) | 2003-09-30 | 2005-04-28 | Infineon Technologies Ag | Verfahren zur Erfassung von Plazierungsfehlern von Schaltungsmustern bei der Übertragung mittels einer Maske in Schichten eines Substrats eines Halbleiterwafers |
| US7308368B2 (en) * | 2004-09-15 | 2007-12-11 | Asml Netherlands B.V. | Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program |
| WO2007040855A1 (en) | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| DE102005046973B4 (de) * | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
| US8181327B2 (en) | 2008-02-08 | 2012-05-22 | Zephyros, Inc | Mechanical method for improving bond joint strength |
| US8214317B2 (en) | 2009-08-17 | 2012-07-03 | Pratt & Whitney Rocketdyne, Inc. | Failure detection system risk reduction assessment |
| US9052709B2 (en) | 2010-07-30 | 2015-06-09 | Kla-Tencor Corporation | Method and system for providing process tool correctables |
| WO2012138758A1 (en) | 2011-04-06 | 2012-10-11 | Kla-Tencor Corporation | Method and system for providing a quality metric for improved process control |
| US9097978B2 (en) | 2012-02-03 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to characterize photolithography lens quality |
| US9188876B2 (en) * | 2012-02-07 | 2015-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of determining overlay error and control system for dynamic control of reticle position |
| US8860941B2 (en) * | 2012-04-27 | 2014-10-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool induced shift reduction determination for overlay metrology |
| US9201312B2 (en) | 2013-04-16 | 2015-12-01 | Kla-Tencor Corporation | Method for correcting position measurements for optical errors and method for determining mask writer errors |
| US9214317B2 (en) | 2013-06-04 | 2015-12-15 | Kla-Tencor Corporation | System and method of SEM overlay metrology |
| TWI544288B (zh) * | 2014-04-14 | 2016-08-01 | 台灣積體電路製造股份有限公司 | 疊對度量方法 |
| WO2016124393A1 (en) * | 2015-02-04 | 2016-08-11 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| CN106325001B (zh) * | 2015-07-10 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 套刻精度补偿方法及装置 |
| EP3171396A1 (en) * | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| KR102357632B1 (ko) | 2016-06-27 | 2022-01-28 | 케이엘에이 코포레이션 | 패턴 배치 및 패턴의 크기의 측정을 위한 장치 및 방법 그리고 이들의 컴퓨터 프로그램 |
-
2018
- 2018-06-15 US US16/009,939 patent/US10474040B2/en active Active
- 2018-12-04 TW TW107143359A patent/TWI781259B/zh active
- 2018-12-06 EP EP18886399.7A patent/EP3721294B1/en active Active
- 2018-12-06 CN CN201880077786.3A patent/CN111433676B/zh active Active
- 2018-12-06 KR KR1020207019440A patent/KR102435141B1/ko active Active
- 2018-12-06 JP JP2020531119A patent/JP7118152B2/ja active Active
- 2018-12-06 SG SG11202002413UA patent/SG11202002413UA/en unknown
- 2018-12-06 WO PCT/US2018/064145 patent/WO2019113262A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019113262A1 (en) | 2019-06-13 |
| TWI781259B (zh) | 2022-10-21 |
| TW201935148A (zh) | 2019-09-01 |
| KR102435141B1 (ko) | 2022-08-22 |
| CN111433676B (zh) | 2022-08-05 |
| EP3721294B1 (en) | 2025-05-28 |
| US20190179231A1 (en) | 2019-06-13 |
| KR20200086748A (ko) | 2020-07-17 |
| JP7118152B2 (ja) | 2022-08-15 |
| EP3721294A1 (en) | 2020-10-14 |
| JP2021505959A (ja) | 2021-02-18 |
| EP3721294A4 (en) | 2021-09-01 |
| CN111433676A (zh) | 2020-07-17 |
| US10474040B2 (en) | 2019-11-12 |
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