CN111433676B - 用于装置相关叠加计量的系统及方法 - Google Patents

用于装置相关叠加计量的系统及方法 Download PDF

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Publication number
CN111433676B
CN111433676B CN201880077786.3A CN201880077786A CN111433676B CN 111433676 B CN111433676 B CN 111433676B CN 201880077786 A CN201880077786 A CN 201880077786A CN 111433676 B CN111433676 B CN 111433676B
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China
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layer
overlay
pattern
features
additional
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CN201880077786.3A
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Chinese (zh)
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CN111433676A (zh
Inventor
F·拉斯克
U·铂尔曼
S·艾林
N·古特曼
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electromagnetism (AREA)
  • Polyamides (AREA)
CN201880077786.3A 2017-12-07 2018-12-06 用于装置相关叠加计量的系统及方法 Active CN111433676B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762595987P 2017-12-07 2017-12-07
US62/595,987 2017-12-07
US16/009,939 US10474040B2 (en) 2017-12-07 2018-06-15 Systems and methods for device-correlated overlay metrology
US16/009,939 2018-06-15
PCT/US2018/064145 WO2019113262A1 (en) 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology

Publications (2)

Publication Number Publication Date
CN111433676A CN111433676A (zh) 2020-07-17
CN111433676B true CN111433676B (zh) 2022-08-05

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Country Link
US (1) US10474040B2 (https=)
EP (1) EP3721294B1 (https=)
JP (1) JP7118152B2 (https=)
KR (1) KR102435141B1 (https=)
CN (1) CN111433676B (https=)
SG (1) SG11202002413UA (https=)
TW (1) TWI781259B (https=)
WO (1) WO2019113262A1 (https=)

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CN111458984A (zh) * 2020-03-13 2020-07-28 华中科技大学 一种套刻标记及测量配置的分步优化方法
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11556738B2 (en) * 2020-10-01 2023-01-17 Kla Corporation System and method for determining target feature focus in image-based overlay metrology
US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US12085385B2 (en) 2021-10-06 2024-09-10 Kla Corporation Design-assisted large field of view metrology
KR102755839B1 (ko) * 2021-10-21 2025-01-15 케이엘에이 코포레이션 개선된 오버레이 오차 계측을 위한 유도 변위
EP4202552B1 (en) 2021-12-24 2024-04-17 Imec VZW Method and structure for determining an overlay error
TWI809929B (zh) * 2022-04-08 2023-07-21 南亞科技股份有限公司 具有疊對標記的半導體元件結構
US12354970B2 (en) 2022-04-08 2025-07-08 Nanya Technology Corporation Semiconductor device structure with overlay mark
US12243832B2 (en) 2022-04-08 2025-03-04 Nanya Technology Corporation Method for manufacturing semiconductor device structure with overlay marks
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement

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Also Published As

Publication number Publication date
WO2019113262A1 (en) 2019-06-13
SG11202002413UA (en) 2020-06-29
TWI781259B (zh) 2022-10-21
TW201935148A (zh) 2019-09-01
KR102435141B1 (ko) 2022-08-22
EP3721294B1 (en) 2025-05-28
US20190179231A1 (en) 2019-06-13
KR20200086748A (ko) 2020-07-17
JP7118152B2 (ja) 2022-08-15
EP3721294A1 (en) 2020-10-14
JP2021505959A (ja) 2021-02-18
EP3721294A4 (en) 2021-09-01
CN111433676A (zh) 2020-07-17
US10474040B2 (en) 2019-11-12

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