KR102434981B1 - 유기 발광 다이오드를 위한 광 추출 기판의 제조 방법 및 이를 포함하는 제품 - Google Patents

유기 발광 다이오드를 위한 광 추출 기판의 제조 방법 및 이를 포함하는 제품 Download PDF

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KR102434981B1
KR102434981B1 KR1020197013016A KR20197013016A KR102434981B1 KR 102434981 B1 KR102434981 B1 KR 102434981B1 KR 1020197013016 A KR1020197013016 A KR 1020197013016A KR 20197013016 A KR20197013016 A KR 20197013016A KR 102434981 B1 KR102434981 B1 KR 102434981B1
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layer
pulse
light extraction
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KR20190067199A (ko
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쿠안-팅 쿠오
젠-치에 린
루 장
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코닝 인코포레이티드
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    • H01L51/5262—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H01L51/0097—
    • H01L51/5268—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • B05D3/067—Curing or cross-linking the coating
    • H01L2251/303—
    • H01L2251/5338—
    • H01L2251/5369—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020197013016A 2016-10-17 2017-10-17 유기 발광 다이오드를 위한 광 추출 기판의 제조 방법 및 이를 포함하는 제품 Active KR102434981B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662409070P 2016-10-17 2016-10-17
US62/409,070 2016-10-17
PCT/US2017/056880 WO2018075449A1 (en) 2016-10-17 2017-10-17 Processes for making light extraction substrates for an organic light emitting diode and products including the same

Publications (2)

Publication Number Publication Date
KR20190067199A KR20190067199A (ko) 2019-06-14
KR102434981B1 true KR102434981B1 (ko) 2022-08-22

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Country Link
US (2) US10367169B2 (https=)
EP (1) EP3526826A1 (https=)
JP (1) JP2019536199A (https=)
KR (1) KR102434981B1 (https=)
CN (1) CN109863615A (https=)
TW (1) TW201821255A (https=)
WO (1) WO2018075449A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN112368847A (zh) * 2018-06-21 2021-02-12 康宁公司 通过近红外光辐射固化的内部光提取层
CN111162191B (zh) * 2019-03-18 2022-03-29 广东聚华印刷显示技术有限公司 封装结构、显示面板及其制备方法
CN112652240A (zh) * 2019-10-11 2021-04-13 群创光电股份有限公司 可挠性显示装置及可挠性显示装置的制造方法

Citations (3)

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US20120091488A1 (en) 2009-04-02 2012-04-19 Saint-Gobain Glass France Method for manufacturing a structure with a textured surface for an organic light-emitting diode device, and structure with a textured surface
US20120261701A1 (en) 2011-04-18 2012-10-18 Samsung Corning Precision Materials Co., Ltd. Light extraction substrate for electroluminescent device and manufacturing method thereof
KR101359663B1 (ko) 2011-05-19 2014-02-07 한양대학교 산학협력단 극단파 백색광 조사법을 이용한 반도체 산화물의 광소결 방법

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US8827532B2 (en) * 2011-04-22 2014-09-09 3M Innovative Properties Company Light guides
SG11201400107UA (en) * 2011-08-16 2014-04-28 Xenon Corp Sintering process and apparatus
KR20130052825A (ko) * 2011-11-14 2013-05-23 삼성전자주식회사 반도체 발광소자
JP5897437B2 (ja) 2012-09-14 2016-03-30 富士フイルム株式会社 導電層の製造方法、プリント配線基板
NL1039815C2 (en) 2012-09-21 2014-03-24 Stichting Dutch Polymer Inst Atmospheric plasma sintering.
US9711744B2 (en) * 2012-12-21 2017-07-18 3M Innovative Properties Company Patterned structured transfer tape
US9310685B2 (en) 2013-05-13 2016-04-12 Nokia Technologies Oy Method and apparatus for the formation of conductive films on a substrate
TW201527013A (zh) 2013-12-20 2015-07-16 Xenon Corp 用於連續閃光燈燒結的系統和方法
CN106103084A (zh) 2014-03-19 2016-11-09 富士胶片株式会社 功能性层叠膜、功能性层叠膜的制造方法、及包含功能性层叠膜的有机电致发光装置
TW201539736A (zh) * 2014-03-19 2015-10-16 ３Ｍ新設資產公司 用於藉白光成色之 oled 裝置的奈米結構
KR101751589B1 (ko) 2014-09-22 2017-06-27 한국에너지기술연구원 상이한 촉매가 코팅된 플레이트를 포함한 열교환형 반응기
KR101579457B1 (ko) * 2014-12-22 2015-12-22 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
KR101642120B1 (ko) * 2014-12-24 2016-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
KR101632614B1 (ko) * 2014-12-24 2016-06-22 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
KR101999294B1 (ko) 2016-03-23 2019-07-15 코닝 인코포레이티드 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120091488A1 (en) 2009-04-02 2012-04-19 Saint-Gobain Glass France Method for manufacturing a structure with a textured surface for an organic light-emitting diode device, and structure with a textured surface
US20120261701A1 (en) 2011-04-18 2012-10-18 Samsung Corning Precision Materials Co., Ltd. Light extraction substrate for electroluminescent device and manufacturing method thereof
KR101359663B1 (ko) 2011-05-19 2014-02-07 한양대학교 산학협력단 극단파 백색광 조사법을 이용한 반도체 산화물의 광소결 방법

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US10367169B2 (en) 2019-07-30
EP3526826A1 (en) 2019-08-21
TW201821255A (zh) 2018-06-16
CN109863615A (zh) 2019-06-07
US10622589B2 (en) 2020-04-14
KR20190067199A (ko) 2019-06-14
JP2019536199A (ja) 2019-12-12
US20180108868A1 (en) 2018-04-19
US20190326557A1 (en) 2019-10-24
WO2018075449A1 (en) 2018-04-26

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