KR102427823B1 - 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 - Google Patents
정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 Download PDFInfo
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- KR102427823B1 KR102427823B1 KR1020180066582A KR20180066582A KR102427823B1 KR 102427823 B1 KR102427823 B1 KR 102427823B1 KR 1020180066582 A KR1020180066582 A KR 1020180066582A KR 20180066582 A KR20180066582 A KR 20180066582A KR 102427823 B1 KR102427823 B1 KR 102427823B1
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- potential difference
- electrostatic chuck
- substrate
- electrode
- mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H01L51/001—
-
- H01L51/56—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180066582A KR102427823B1 (ko) | 2018-06-11 | 2018-06-11 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
JP2018221716A JP7278541B2 (ja) | 2018-06-11 | 2018-11-27 | 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
CN201811560378.1A CN110578118A (zh) | 2018-06-11 | 2018-12-20 | 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180066582A KR102427823B1 (ko) | 2018-06-11 | 2018-06-11 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190140156A KR20190140156A (ko) | 2019-12-19 |
KR102427823B1 true KR102427823B1 (ko) | 2022-07-29 |
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Family Applications (1)
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KR1020180066582A KR102427823B1 (ko) | 2018-06-11 | 2018-06-11 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7278541B2 (zh) |
KR (1) | KR102427823B1 (zh) |
CN (1) | CN110578118A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102411995B1 (ko) * | 2018-09-21 | 2022-06-21 | 캐논 톡키 가부시키가이샤 | 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법 |
CN113005403B (zh) * | 2019-12-20 | 2023-06-20 | 佳能特机株式会社 | 成膜装置、使用其的成膜方法及电子器件的制造方法 |
KR102501609B1 (ko) * | 2019-12-20 | 2023-02-17 | 캐논 톡키 가부시키가이샤 | 성막 장치, 이를 사용한 성막 방법, 및 전자 디바이스의 제조방법 |
CN113005398B (zh) * | 2019-12-20 | 2023-04-07 | 佳能特机株式会社 | 成膜装置、成膜方法及电子器件的制造方法 |
KR20210080802A (ko) * | 2019-12-23 | 2021-07-01 | 캐논 톡키 가부시키가이샤 | 성막 장치, 성막 방법, 및 전자 디바이스의 제조방법 |
KR20210081589A (ko) * | 2019-12-24 | 2021-07-02 | 캐논 톡키 가부시키가이샤 | 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법 |
CN113093416B (zh) * | 2021-04-02 | 2024-04-12 | 曲面超精密光电(深圳)有限公司 | 一种超长宽比平面全贴合方法及其设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280438A (ja) * | 2001-03-19 | 2002-09-27 | Ulvac Japan Ltd | 真空処理方法 |
JP2011195907A (ja) | 2010-03-19 | 2011-10-06 | Tokyo Electron Ltd | マスク保持装置及び薄膜形成装置 |
US20150343580A1 (en) | 2014-06-02 | 2015-12-03 | Applied Materials, Inc. | Electromagnetic chuck for oled mask chucking |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204325A (ja) * | 1992-12-28 | 1994-07-22 | Hitachi Ltd | 静電吸着装置およびその吸着方法 |
JP3805134B2 (ja) * | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | 絶縁性基板吸着用静電チャック |
EP1359466A1 (en) * | 2002-05-01 | 2003-11-05 | ASML Netherlands B.V. | Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method |
JP2005116849A (ja) | 2003-10-09 | 2005-04-28 | Canon Inc | 静電吸着装置及び方法、露光装置、デバイスの製造方法 |
JP4884811B2 (ja) | 2006-03-20 | 2012-02-29 | 三菱重工業株式会社 | ガラス基板の静電吸着装置及びその吸着離脱方法 |
DE102008037387A1 (de) * | 2008-09-24 | 2010-03-25 | Aixtron Ag | Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske |
JP2014065959A (ja) | 2012-09-27 | 2014-04-17 | Hitachi High-Technologies Corp | 蒸着装置、および、蒸着装置における基板設置方法 |
WO2015042309A1 (en) | 2013-09-20 | 2015-03-26 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
WO2015171207A1 (en) | 2014-05-09 | 2015-11-12 | Applied Materials, Inc. | Substrate carrier system and method for using the same |
KR102235605B1 (ko) * | 2014-10-08 | 2021-04-06 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 방법 |
KR102083443B1 (ko) * | 2015-04-15 | 2020-03-02 | 가부시키가이샤 알박 | 기판홀딩기구, 성막 장치, 및 기판의 홀딩방법 |
KR102586049B1 (ko) * | 2015-11-13 | 2023-10-10 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체, 표시 장치의 제조 장치 및 표시 장치의 제조 방법 |
KR102490641B1 (ko) * | 2015-11-25 | 2023-01-20 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 방법 |
KR102520693B1 (ko) | 2016-03-03 | 2023-04-11 | 엘지디스플레이 주식회사 | 유기발광소자의 증착장치 |
KR102219478B1 (ko) * | 2016-06-24 | 2021-02-23 | 캐논 톡키 가부시키가이샤 | 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 |
CN107856041B (zh) * | 2016-09-22 | 2021-04-20 | 欣兴电子股份有限公司 | 吸盘装置以及元件转移方法 |
-
2018
- 2018-06-11 KR KR1020180066582A patent/KR102427823B1/ko active IP Right Grant
- 2018-11-27 JP JP2018221716A patent/JP7278541B2/ja active Active
- 2018-12-20 CN CN201811560378.1A patent/CN110578118A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280438A (ja) * | 2001-03-19 | 2002-09-27 | Ulvac Japan Ltd | 真空処理方法 |
JP2011195907A (ja) | 2010-03-19 | 2011-10-06 | Tokyo Electron Ltd | マスク保持装置及び薄膜形成装置 |
US20150343580A1 (en) | 2014-06-02 | 2015-12-03 | Applied Materials, Inc. | Electromagnetic chuck for oled mask chucking |
Also Published As
Publication number | Publication date |
---|---|
JP7278541B2 (ja) | 2023-05-22 |
JP2019216230A (ja) | 2019-12-19 |
CN110578118A (zh) | 2019-12-17 |
KR20190140156A (ko) | 2019-12-19 |
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