KR102410186B1 - 성막 장치 및 성막 기판 제조 방법 - Google Patents

성막 장치 및 성막 기판 제조 방법 Download PDF

Info

Publication number
KR102410186B1
KR102410186B1 KR1020150136515A KR20150136515A KR102410186B1 KR 102410186 B1 KR102410186 B1 KR 102410186B1 KR 1020150136515 A KR1020150136515 A KR 1020150136515A KR 20150136515 A KR20150136515 A KR 20150136515A KR 102410186 B1 KR102410186 B1 KR 102410186B1
Authority
KR
South Korea
Prior art keywords
work
target
film
distance
power
Prior art date
Application number
KR1020150136515A
Other languages
English (en)
Korean (ko)
Other versions
KR20160038809A (ko
Inventor
요시오 가와마타
Original Assignee
시바우라 메카트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시바우라 메카트로닉스 가부시끼가이샤 filed Critical 시바우라 메카트로닉스 가부시끼가이샤
Publication of KR20160038809A publication Critical patent/KR20160038809A/ko
Application granted granted Critical
Publication of KR102410186B1 publication Critical patent/KR102410186B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H01L21/203—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
KR1020150136515A 2014-09-30 2015-09-25 성막 장치 및 성막 기판 제조 방법 KR102410186B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-202501 2014-09-30
JP2014202501 2014-09-30
JPJP-P-2015-172085 2015-09-01
JP2015172085A JP6411975B2 (ja) 2014-09-30 2015-09-01 成膜装置及び成膜基板製造方法

Publications (2)

Publication Number Publication Date
KR20160038809A KR20160038809A (ko) 2016-04-07
KR102410186B1 true KR102410186B1 (ko) 2022-06-20

Family

ID=55864037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150136515A KR102410186B1 (ko) 2014-09-30 2015-09-25 성막 장치 및 성막 기판 제조 방법

Country Status (3)

Country Link
JP (1) JP6411975B2 (ja)
KR (1) KR102410186B1 (ja)
TW (1) TWI611034B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039224B2 (ja) * 2016-10-13 2022-03-22 芝浦メカトロニクス株式会社 電子部品の製造装置及び電子部品の製造方法
JP7002302B2 (ja) * 2016-12-13 2022-02-10 芝浦メカトロニクス株式会社 成膜装置
JP7000083B2 (ja) * 2017-09-07 2022-01-19 芝浦メカトロニクス株式会社 成膜装置
JP7039234B2 (ja) 2017-09-29 2022-03-22 芝浦メカトロニクス株式会社 成膜装置
SG11202006091UA (en) * 2017-12-27 2020-07-29 Canon Anelva Corp Deposition method and deposition apparatus
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7138504B2 (ja) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
JP7064407B2 (ja) * 2018-08-31 2022-05-10 キヤノントッキ株式会社 成膜装置及び成膜装置の制御方法
CN111286712B (zh) * 2018-12-10 2022-05-17 苏州能讯高能半导体有限公司 一种靶材溅镀设备以及靶材溅镀系统
WO2020257965A1 (en) 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法
CN114144542B (zh) * 2020-07-30 2022-09-06 株式会社新柯隆 移载装置及使用了该移载装置的成膜装置
CN113789500B (zh) * 2021-08-04 2023-07-25 湖北三峡职业技术学院 自动调整离子束溅射角和入射角的离子镀装置及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019529B1 (ko) * 2006-06-22 2011-03-07 시바우라 메카트로닉스 가부시키가이샤 성막 장치 및 성막 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409451A1 (en) * 1989-07-18 1991-01-23 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
JPH03264667A (ja) * 1990-03-12 1991-11-25 Shin Meiwa Ind Co Ltd カルーセル型スパッタリング装置
DE69842229D1 (de) * 1997-02-20 2011-06-01 Shibaura Mechatronics Corp Stromversorgungsvorrichtung zum sputtern und sputtervorrichtung, die diese verwendet
JP4345869B2 (ja) * 1997-05-16 2009-10-14 Ｈｏｙａ株式会社 スパッタ成膜用の膜厚補正機構
US8663432B2 (en) * 2008-02-13 2014-03-04 Shibaura Mechatronics Corporation Magnetron sputtering apparatus and magnetron sputtering method
JP2009228062A (ja) * 2008-03-24 2009-10-08 Panasonic Corp スパッタ成膜装置及びスパッタ成膜方法
EP2437280A1 (en) * 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
TW201339341A (zh) * 2012-03-19 2013-10-01 Shibaura Mechatronics Corp 成膜方法及濺鍍裝置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019529B1 (ko) * 2006-06-22 2011-03-07 시바우라 메카트로닉스 가부시키가이샤 성막 장치 및 성막 방법

Also Published As

Publication number Publication date
JP6411975B2 (ja) 2018-10-24
TW201612346A (en) 2016-04-01
KR20160038809A (ko) 2016-04-07
TWI611034B (zh) 2018-01-11
JP2016069727A (ja) 2016-05-09

Similar Documents

Publication Publication Date Title
KR102410186B1 (ko) 성막 장치 및 성막 기판 제조 방법
CN105463386B (zh) 成膜装置及成膜基板制造方法
KR102083955B1 (ko) 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스
KR101971343B1 (ko) 성막 장치, 성막 제품의 제조 방법 및 전자 부품의 제조 방법
KR102175620B1 (ko) 성막 장치
CN108690966B (zh) 等离子体处理装置
TWI567216B (zh) 供濺鍍沉積的微型可旋轉式濺鍍裝置
JP2019099882A (ja) Ｐｖｄ処理方法およびｐｖｄ処理装置
JP2019189908A (ja) 成膜装置および成膜方法
JP7131916B2 (ja) プラズマ処理装置
TW202006166A (zh) 使用減低的腔室覆蓋面積的用於線性掃描物理氣相沉積的方法及設備
US20120024694A1 (en) Triangular Scanning Magnet in Sputtering Tool Moving Over Larger Triangular Target
JP6847049B2 (ja) 多層堆積処理装置
JP2023115151A (ja) 成膜装置および成膜方法
JP7233339B2 (ja) プラズマ処理装置
TW202012672A (zh) 成膜裝置
CN114182227B (zh) 成膜装置
JP2012201919A (ja) スパッタ装置およびスパッタ方法
KR102337791B1 (ko) 마그네트론 스퍼터링을 위한 방법 및 장치
KR20130078372A (ko) 스퍼터 장치
CN110872691A (zh) 等离子体处理装置
KR20170061167A (ko) 캐소드 스퍼터링 모드

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant