KR102403389B1 - 표시 장치 및 전자 기기 - Google Patents

표시 장치 및 전자 기기 Download PDF

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KR102403389B1
KR102403389B1 KR1020197009699A KR20197009699A KR102403389B1 KR 102403389 B1 KR102403389 B1 KR 102403389B1 KR 1020197009699 A KR1020197009699 A KR 1020197009699A KR 20197009699 A KR20197009699 A KR 20197009699A KR 102403389 B1 KR102403389 B1 KR 102403389B1
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metal oxide
film
transistor
oxide film
insulating film
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KR20190045930A (ko
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슌페이 야마자키
šœ페이 야마자키
준이치 코에즈카
겐이치 오카자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L27/1225—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • H01L27/0251—
    • H01L27/1248—
    • H01L27/1255—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/10—Special adaptations of display systems for operation with variable images
    • G09G2320/103—Detection of image changes, e.g. determination of an index representative of the image change
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/04—Display protection
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2340/00—Aspects of display data processing
    • G09G2340/04—Changes in size, position or resolution of an image
    • G09G2340/0407—Resolution change, inclusive of the use of different resolutions for different screen areas
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/18—Use of a frame buffer in a display terminal, inclusive of the display panel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/36—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of a graphic pattern, e.g. using an all-points-addressable [APA] memory
    • G09G5/39—Control of the bit-mapped memory

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
KR1020197009699A 2016-09-12 2017-09-06 표시 장치 및 전자 기기 Active KR102403389B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JPJP-P-2016-178106 2016-09-12
JP2016178106 2016-09-12
JPJP-P-2016-183322 2016-09-20
JP2016183322 2016-09-20
JP2016233577 2016-11-30
JPJP-P-2016-233577 2016-11-30
JPJP-P-2017-099483 2017-05-19
JP2017099483 2017-05-19
PCT/IB2017/055351 WO2018047067A1 (en) 2016-09-12 2017-09-06 Display device and electronic device

Publications (2)

Publication Number Publication Date
KR20190045930A KR20190045930A (ko) 2019-05-03
KR102403389B1 true KR102403389B1 (ko) 2022-06-03

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Country Status (7)

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US (1) US10276594B2 (https=)
JP (2) JP7113602B2 (https=)
KR (1) KR102403389B1 (https=)
CN (2) CN115857237A (https=)
DE (1) DE112017004584T5 (https=)
TW (1) TWI743187B (https=)
WO (1) WO2018047067A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12150755B1 (en) * 2012-09-25 2024-11-26 Micro Mobio Corporation Integrated display with antenna system and method
WO2018130954A1 (ja) * 2017-01-16 2018-07-19 株式会社半導体エネルギー研究所 半導体装置
US10460822B2 (en) * 2017-08-23 2019-10-29 Arm Limited Memory with a controllable I/O functional unit
CN108376695B (zh) * 2018-02-05 2021-01-08 惠科股份有限公司 一种显示面板和显示装置
US11552111B2 (en) 2018-04-20 2023-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2019226958A1 (en) 2018-05-24 2019-11-28 The Research Foundation For The State University Of New York Capacitive sensor
JP2020092222A (ja) * 2018-12-07 2020-06-11 日新電機株式会社 薄膜トランジスタ及びその製造方法
KR102557031B1 (ko) 2018-12-28 2023-07-19 삼성전자주식회사 금속 베젤을 이용하는 안테나 모듈 및 그것을 포함하는 전자 장치
JP7201508B2 (ja) * 2019-03-28 2023-01-10 株式会社ジャパンディスプレイ 半導体装置
US12463322B1 (en) 2019-04-03 2025-11-04 Micro Mobio Corporation Antenna in display
US11036322B2 (en) * 2019-06-24 2021-06-15 Wuhan China Star Optoelectronics Technology Co., Ltd Array substrate and method of manufacturing same
JP2021002633A (ja) * 2019-06-25 2021-01-07 日新電機株式会社 酸化物半導体の加工法方法及び薄膜トランジスタの製造方法
KR102727034B1 (ko) 2019-09-03 2024-11-07 삼성디스플레이 주식회사 표시 장치 및 제조 방법
CN115136323B (zh) * 2020-02-20 2025-10-21 株式会社尼康 晶体管、电子装置及晶体管之制造方法
CN111243540A (zh) * 2020-02-21 2020-06-05 合肥鑫晟光电科技有限公司 一种显示面板的驱动方法、其驱动电路及显示装置
JP7454971B2 (ja) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
KR102765756B1 (ko) * 2020-11-17 2025-02-13 삼성디스플레이 주식회사 표시 장치
CN116997957A (zh) * 2021-04-12 2023-11-03 谷歌有限责任公司 重新校准伽玛曲线以用于多显示刷新速率中的无缝转变
US12382700B2 (en) 2021-12-09 2025-08-05 AUO Corporation Semiconductor device and manufacturing method thereof
CN116343685A (zh) * 2021-12-24 2023-06-27 川奇光电科技（扬州）有限公司 电子纸显示装置及电子纸显示面板
KR102923662B1 (ko) * 2022-05-04 2026-02-05 경희대학교 산학협력단 강유전성 박막 트랜지스터를 이용한 디스플레이 화소 회로 및 그 구동 방법
CN115148152B (zh) * 2022-06-28 2025-06-27 昆山国显光电有限公司 显示面板及其温度侦测方法、显示装置
TWI825888B (zh) * 2022-08-02 2023-12-11 元太科技工業股份有限公司 觸控顯示裝置及其製作方法
JP2024137422A (ja) * 2023-03-24 2024-10-07 キオクシア株式会社 半導体装置及び半導体記憶装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015181151A (ja) * 2014-02-05 2015-10-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050017244A1 (en) 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US9306078B2 (en) * 2008-09-08 2016-04-05 Cbrite Inc. Stable amorphous metal oxide semiconductor
KR101739154B1 (ko) 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101460869B1 (ko) 2009-09-04 2014-11-11 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
CN102484139B (zh) * 2009-10-08 2016-07-06 株式会社半导体能源研究所 氧化物半导体层及半导体装置
KR101865546B1 (ko) 2009-10-16 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
MY166003A (en) 2009-10-21 2018-05-21 Semiconductor Energy Lab Display device and electronic device including display device
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
KR102932705B1 (ko) 2012-04-13 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
TWI709244B (zh) 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
DE112014004839T5 (de) 2013-10-22 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
JP6625796B2 (ja) * 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 表示装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
CN110265482B (zh) 2013-12-02 2023-08-08 株式会社半导体能源研究所 显示装置
JP6506545B2 (ja) * 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
WO2015132697A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
US20150318171A1 (en) * 2014-05-02 2015-11-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide
KR20150126272A (ko) * 2014-05-02 2015-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물의 제작 방법
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
JP6758844B2 (ja) 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
DE112016001033T5 (de) 2015-03-03 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben
JP2016183322A (ja) 2015-03-25 2016-10-20 日本ポリプロ株式会社 電気電子機器部品搬送ケース用プロピレン系樹脂組成物及び電気電子機器部品搬送ケース
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102721654B1 (ko) 2016-03-11 2024-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합체 및 트랜지스터
US9905579B2 (en) 2016-03-18 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10388738B2 (en) 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
WO2017199130A1 (en) 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015181151A (ja) * 2014-02-05 2015-10-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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