KR102401846B1 - 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 - Google Patents

패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 Download PDF

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KR102401846B1
KR102401846B1 KR1020177023155A KR20177023155A KR102401846B1 KR 102401846 B1 KR102401846 B1 KR 102401846B1 KR 1020177023155 A KR1020177023155 A KR 1020177023155A KR 20177023155 A KR20177023155 A KR 20177023155A KR 102401846 B1 KR102401846 B1 KR 102401846B1
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patterned
feature
exposure
ions
photoresist
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KR20170105601A (ko
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트리스탄 와이. 마
모린 케이. 페터슨
존 하우탈라
루도빅 고데트
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H01L21/0279—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H01L21/0276—
    • H01L21/0277—
    • H01L21/31058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2049—Ion beam lithography processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Micromachines (AREA)
  • Materials For Photolithography (AREA)
KR1020177023155A 2015-01-23 2015-12-30 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 Active KR102401846B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562106874P 2015-01-23 2015-01-23
US62/106,874 2015-01-23
US14/645,646 2015-03-12
US14/645,646 US9512517B2 (en) 2015-01-23 2015-03-12 Multiple exposure treatment for processing a patterning feature
PCT/US2015/068047 WO2016118299A1 (en) 2015-01-23 2015-12-30 Multiple exposure treatment for processing a patterning feature

Publications (2)

Publication Number Publication Date
KR20170105601A KR20170105601A (ko) 2017-09-19
KR102401846B1 true KR102401846B1 (ko) 2022-05-25

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KR1020177023155A Active KR102401846B1 (ko) 2015-01-23 2015-12-30 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리

Country Status (6)

Country Link
US (1) US9512517B2 (https=)
JP (1) JP6725518B2 (https=)
KR (1) KR102401846B1 (https=)
CN (1) CN107112211B (https=)
TW (1) TWI604508B (https=)
WO (1) WO2016118299A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102468232B1 (ko) * 2017-10-11 2022-11-21 삼성전자주식회사 기판 식각 방법
US10643858B2 (en) * 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate
US10522349B2 (en) * 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US11372332B2 (en) * 2018-10-26 2022-06-28 Tokyo Electron Limited Plasma treatment method to improve photo resist roughness and remove photo resist scum
JP2024131462A (ja) * 2023-03-16 2024-09-30 東京エレクトロン株式会社 炭素膜形成方法及び炭素膜形成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP2005072518A (ja) 2003-08-28 2005-03-17 Hitachi Ltd 半導体装置の製造方法およびその装置
US20140272728A1 (en) * 2013-03-14 2014-09-18 Varian Semiconductor Equipment Associates, Inc. Techniques for processing photoresist features using ions

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648198A (en) * 1994-12-13 1997-07-15 Kabushiki Kaisha Toshiba Resist hardening process having improved thermal stability
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
US6004854A (en) * 1995-07-17 1999-12-21 Micron Technology, Inc. Method of forming CMOS integrated circuitry
JPH11102899A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 半導体装置の製造方法
EP0940846A1 (en) 1998-03-06 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Method for stripping ion implanted photoresist layer
KR100364122B1 (en) * 2001-04-24 2002-12-11 Hynix Semiconductor Inc Method for fabricating semiconductor device
US6864144B2 (en) * 2002-05-30 2005-03-08 Intel Corporation Method of stabilizing resist material through ion implantation
US6811956B1 (en) * 2002-06-24 2004-11-02 Advanced Micro Devices, Inc. Line edge roughness reduction by plasma treatment before etch
JP2005197348A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 半導体製造装置及び半導体装置の製造方法
KR20080068820A (ko) * 2005-11-16 2008-07-24 가부시키가이샤 니콘 기판 처리 방법, 포토마스크의 제조 방법 및 포토마스크,그리고 디바이스 제조 방법
KR20100133507A (ko) 2008-05-01 2010-12-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물
CN101752205A (zh) * 2008-12-01 2010-06-23 中芯国际集成电路制造(上海)有限公司 收缩线型图形特征尺寸的方法
JP2010147252A (ja) * 2008-12-18 2010-07-01 Sharp Corp イオン注入方法、および半導体装置の製造方法
US8236659B2 (en) 2010-06-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Source and drain feature profile for improving device performance and method of manufacturing same
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8133804B1 (en) 2010-10-01 2012-03-13 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying patterned photoresist using multi-step ion implantation
CN103426760B (zh) * 2012-05-16 2016-02-10 上海华虹宏力半导体制造有限公司 P型ldmos表面沟道器件的制造工艺
US9159810B2 (en) * 2012-08-22 2015-10-13 Advanced Ion Beam Technology, Inc. Doping a non-planar semiconductor device
US9268228B2 (en) * 2013-02-23 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Techniques for patterning a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP2005072518A (ja) 2003-08-28 2005-03-17 Hitachi Ltd 半導体装置の製造方法およびその装置
US20140272728A1 (en) * 2013-03-14 2014-09-18 Varian Semiconductor Equipment Associates, Inc. Techniques for processing photoresist features using ions

Also Published As

Publication number Publication date
TW201630046A (zh) 2016-08-16
CN107112211B (zh) 2021-06-29
KR20170105601A (ko) 2017-09-19
CN107112211A (zh) 2017-08-29
US20160215385A1 (en) 2016-07-28
JP2018508815A (ja) 2018-03-29
TWI604508B (zh) 2017-11-01
US9512517B2 (en) 2016-12-06
WO2016118299A1 (en) 2016-07-28
JP6725518B2 (ja) 2020-07-22

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