KR102375179B1 - 알콕사이드 화합물, 박막 형성용 원료, 박막의 제조방법 및 알코올 화합물 - Google Patents

알콕사이드 화합물, 박막 형성용 원료, 박막의 제조방법 및 알코올 화합물 Download PDF

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KR102375179B1
KR102375179B1 KR1020167029729A KR20167029729A KR102375179B1 KR 102375179 B1 KR102375179 B1 KR 102375179B1 KR 1020167029729 A KR1020167029729 A KR 1020167029729A KR 20167029729 A KR20167029729 A KR 20167029729A KR 102375179 B1 KR102375179 B1 KR 102375179B1
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thin film
group
compound
carbon atoms
raw material
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KR20160148542A (ko
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아츠시 사쿠라이
마사코 하타세
토모하루 요시노
마사키 엔주
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가부시키가이샤 아데카
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
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    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
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    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
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    • C07C251/72—Hydrazones
    • C07C251/74—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/76—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
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    • C07C251/74—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/78—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
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    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
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    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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KR1020167029729A 2014-04-21 2015-03-30 알콕사이드 화합물, 박막 형성용 원료, 박막의 제조방법 및 알코올 화합물 Active KR102375179B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014087310A JP6343481B2 (ja) 2014-04-21 2014-04-21 薄膜形成用原料、薄膜の製造方法及びアルコール化合物
JPJP-P-2014-087310 2014-04-21
PCT/JP2015/059903 WO2015163090A1 (ja) 2014-04-21 2015-03-30 アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物

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KR102375179B1 true KR102375179B1 (ko) 2022-03-15

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US (1) US10351584B2 (enExample)
EP (1) EP3135664B1 (enExample)
JP (1) JP6343481B2 (enExample)
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IL (1) IL248335B (enExample)
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WO (1) WO2015163090A1 (enExample)

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KR102592325B1 (ko) * 2016-07-14 2023-10-20 삼성전자주식회사 알루미늄 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
JPWO2018235530A1 (ja) * 2017-06-21 2020-04-23 株式会社Adeka 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
JP7698951B2 (ja) * 2017-12-17 2025-06-26 アプライド マテリアルズ インコーポレイテッド 選択的堆積によるケイ素化合物膜

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WO2013188377A1 (en) * 2012-06-11 2013-12-19 Wayne State University Precursors for atomic layer deposition

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WO2006057503A1 (en) 2004-11-25 2006-06-01 Lg Life Sciences, Ltd. NOVEL COMPOUNDS AS AGONIST FOR PPARϜ AND PPARα, METHOD FOR PREPARATION OF THE SAME, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME
WO2006107121A1 (en) 2005-04-07 2006-10-12 Korea Research Institue Of Chemical Technology Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same
JP4781012B2 (ja) 2005-05-30 2011-09-28 株式会社Ａｄｅｋａ アルコール化合物を配位子とした金属化合物及び薄膜形成用原料並びに薄膜の製造方法
KR100675983B1 (ko) 2006-03-06 2007-01-30 한국화학연구원 신규의 코발트 아미노알콕사이드 화합물 및 그 제조 방법
CN103664803A (zh) * 2012-09-17 2014-03-26 王天桃 2,3,5,6-四甲基吡嗪新的合成方法
JP6200429B2 (ja) * 2012-11-13 2017-09-20 株式会社Adeka 金属アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films

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WO2013188377A1 (en) * 2012-06-11 2013-12-19 Wayne State University Precursors for atomic layer deposition

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IL248335B (en) 2019-12-31
KR20160148542A (ko) 2016-12-26
TW201609762A (zh) 2016-03-16
WO2015163090A1 (ja) 2015-10-29
IL248335A0 (en) 2016-11-30
US10351584B2 (en) 2019-07-16
US20170121358A1 (en) 2017-05-04
JP6343481B2 (ja) 2018-06-13
JP2015205837A (ja) 2015-11-19
EP3135664A4 (en) 2017-11-01
TWI652274B (zh) 2019-03-01
EP3135664A1 (en) 2017-03-01
EP3135664B1 (en) 2019-10-23

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