JP6343481B2 - 薄膜形成用原料、薄膜の製造方法及びアルコール化合物 - Google Patents

薄膜形成用原料、薄膜の製造方法及びアルコール化合物 Download PDF

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JP6343481B2
JP6343481B2 JP2014087310A JP2014087310A JP6343481B2 JP 6343481 B2 JP6343481 B2 JP 6343481B2 JP 2014087310 A JP2014087310 A JP 2014087310A JP 2014087310 A JP2014087310 A JP 2014087310A JP 6343481 B2 JP6343481 B2 JP 6343481B2
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thin film
carbon atoms
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examples
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JP2015205837A (ja
JP2015205837A5 (enExample
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桜井　淳
淳 桜井
雅子 畑▲瀬▼
雅子 畑▲瀬▼
智晴 吉野
智晴 吉野
正揮 遠津
正揮 遠津
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Adeka Corp
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Adeka Corp
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Priority to EP15782391.5A priority patent/EP3135664B1/en
Priority to US15/303,845 priority patent/US10351584B2/en
Priority to PCT/JP2015/059903 priority patent/WO2015163090A1/ja
Priority to KR1020167029729A priority patent/KR102375179B1/ko
Priority to TW104111262A priority patent/TWI652274B/zh
Publication of JP2015205837A publication Critical patent/JP2015205837A/ja
Priority to IL248335A priority patent/IL248335B/en
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/72—Hydrazones
    • C07C251/74—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/76—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/72—Hydrazones
    • C07C251/74—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/78—Hydrazones having doubly-bound carbon atoms of hydrazone groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
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    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2014087310A 2014-04-21 2014-04-21 薄膜形成用原料、薄膜の製造方法及びアルコール化合物 Active JP6343481B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014087310A JP6343481B2 (ja) 2014-04-21 2014-04-21 薄膜形成用原料、薄膜の製造方法及びアルコール化合物
US15/303,845 US10351584B2 (en) 2014-04-21 2015-03-30 Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound
PCT/JP2015/059903 WO2015163090A1 (ja) 2014-04-21 2015-03-30 アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物
KR1020167029729A KR102375179B1 (ko) 2014-04-21 2015-03-30 알콕사이드 화합물, 박막 형성용 원료, 박막의 제조방법 및 알코올 화합물
EP15782391.5A EP3135664B1 (en) 2014-04-21 2015-03-30 Alkoxide compound, raw material for forming thin film, method for producing thin film, and alcohol compound
TW104111262A TWI652274B (zh) 2014-04-21 2015-04-08 烷氧化合物，薄膜形成用原料，薄膜的製造方法及醇化合物
IL248335A IL248335B (en) 2014-04-21 2016-10-13 Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound

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JP2014087310A JP6343481B2 (ja) 2014-04-21 2014-04-21 薄膜形成用原料、薄膜の製造方法及びアルコール化合物

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JP2018011074A Division JP6408178B2 (ja) 2018-01-26 2018-01-26 アルコキシド化合物

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JP2015205837A JP2015205837A (ja) 2015-11-19
JP2015205837A5 JP2015205837A5 (enExample) 2017-03-16
JP6343481B2 true JP6343481B2 (ja) 2018-06-13

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US (1) US10351584B2 (enExample)
EP (1) EP3135664B1 (enExample)
JP (1) JP6343481B2 (enExample)
KR (1) KR102375179B1 (enExample)
IL (1) IL248335B (enExample)
TW (1) TWI652274B (enExample)
WO (1) WO2015163090A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102592325B1 (ko) * 2016-07-14 2023-10-20 삼성전자주식회사 알루미늄 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
EP3643700A4 (en) * 2017-06-21 2021-03-10 Adeka Corporation METAL ALCOXIDE COMPOUND, THIN FILM FORMING RAW MATERIAL AND METHOD FOR MANUFACTURING A THIN FILM
WO2019118845A1 (en) * 2017-12-17 2019-06-20 Applied Materials, Inc. Silicide films through selective deposition
WO2023286589A1 (ja) * 2021-07-12 2023-01-19 株式会社Adeka コバルト化合物、薄膜形成用原料、薄膜及び薄膜の製造方法

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WO2006057503A1 (en) * 2004-11-25 2006-06-01 Lg Life Sciences, Ltd. NOVEL COMPOUNDS AS AGONIST FOR PPARϜ AND PPARα, METHOD FOR PREPARATION OF THE SAME, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME
US7462732B2 (en) 2005-04-07 2008-12-09 Korea Research Institute Of Chemical Technology Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same
JP4781012B2 (ja) 2005-05-30 2011-09-28 株式会社Ａｄｅｋａ アルコール化合物を配位子とした金属化合物及び薄膜形成用原料並びに薄膜の製造方法
KR100675983B1 (ko) 2006-03-06 2007-01-30 한국화학연구원 신규의 코발트 아미노알콕사이드 화합물 및 그 제조 방법
JP5690684B2 (ja) 2011-08-02 2015-03-25 株式会社Adeka アルコキシド化合物
WO2013188377A1 (en) * 2012-06-11 2013-12-19 Wayne State University Precursors for atomic layer deposition
CN103664803A (zh) * 2012-09-17 2014-03-26 王天桃 2,3,5,6-四甲基吡嗪新的合成方法
EP2921472B1 (en) * 2012-11-13 2017-01-04 Adeka Corporation Metal alkoxide compound, thin film-forming starting material, method for producing thin film, and alcohol compound
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films

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Publication number Publication date
KR20160148542A (ko) 2016-12-26
IL248335A0 (en) 2016-11-30
US20170121358A1 (en) 2017-05-04
WO2015163090A1 (ja) 2015-10-29
KR102375179B1 (ko) 2022-03-15
JP2015205837A (ja) 2015-11-19
TW201609762A (zh) 2016-03-16
EP3135664B1 (en) 2019-10-23
US10351584B2 (en) 2019-07-16
TWI652274B (zh) 2019-03-01
EP3135664A4 (en) 2017-11-01
EP3135664A1 (en) 2017-03-01
IL248335B (en) 2019-12-31

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