KR102367238B1 - 금속 하드마스크 조성물 및 반도체 기판 상에 미세 패턴을 형성하는 방법 - Google Patents

금속 하드마스크 조성물 및 반도체 기판 상에 미세 패턴을 형성하는 방법 Download PDF

Info

Publication number
KR102367238B1
KR102367238B1 KR1020177025519A KR20177025519A KR102367238B1 KR 102367238 B1 KR102367238 B1 KR 102367238B1 KR 1020177025519 A KR1020177025519 A KR 1020177025519A KR 20177025519 A KR20177025519 A KR 20177025519A KR 102367238 B1 KR102367238 B1 KR 102367238B1
Authority
KR
South Korea
Prior art keywords
moiety
alkyl
aryl
alkylene
fluorinated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177025519A
Other languages
English (en)
Korean (ko)
Other versions
KR20170116134A (ko
Inventor
후이롱 야오
엘리자베스 울퍼
살렘 케이 멀렌
알베르토 디 디오시스
준연 조
Original Assignee
리지필드 액퀴지션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리지필드 액퀴지션 filed Critical 리지필드 액퀴지션
Publication of KR20170116134A publication Critical patent/KR20170116134A/ko
Application granted granted Critical
Publication of KR102367238B1 publication Critical patent/KR102367238B1/ko
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머터리얼스 게엠베하
Assigned to 에이제트 일렉트로닉 머터리얼스 게엠베하 reassignment 에이제트 일렉트로닉 머터리얼스 게엠베하 권리의 전부이전등록 Assignors: 리지필드 액퀴지션
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/006—Anti-reflective coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Plasma & Fusion (AREA)
KR1020177025519A 2015-02-11 2016-02-02 금속 하드마스크 조성물 및 반도체 기판 상에 미세 패턴을 형성하는 방법 Active KR102367238B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/619,603 2015-02-11
US14/619,603 US9499698B2 (en) 2015-02-11 2015-02-11 Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
PCT/EP2016/052167 WO2016128252A1 (en) 2015-02-11 2016-02-02 Metal hardmask composition and processes for forming fine patterns on semiconductor substrates

Publications (2)

Publication Number Publication Date
KR20170116134A KR20170116134A (ko) 2017-10-18
KR102367238B1 true KR102367238B1 (ko) 2022-02-23

Family

ID=55275101

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177025519A Active KR102367238B1 (ko) 2015-02-11 2016-02-02 금속 하드마스크 조성물 및 반도체 기판 상에 미세 패턴을 형성하는 방법

Country Status (8)

Country Link
US (1) US9499698B2 (https=)
EP (1) EP3257069B1 (https=)
JP (1) JP6810696B2 (https=)
KR (1) KR102367238B1 (https=)
CN (1) CN107251203B (https=)
SG (1) SG11201705487QA (https=)
TW (1) TWI669353B (https=)
WO (1) WO2016128252A1 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011054007A1 (en) 2009-11-02 2011-05-05 Oxford Biotherapeutics Ltd. Ror1 as therapeutic and diagnostic target
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
CN110418811B (zh) 2017-03-16 2022-05-13 默克专利股份有限公司 光刻组合物及其使用方法
TWI755564B (zh) * 2017-09-06 2022-02-21 德商馬克專利公司 含有旋轉塗佈無機氧化物的組合物、製造電子裝置之方法以及在矽基板上塗佈硬遮罩組合物之方法
KR102296793B1 (ko) * 2018-07-06 2021-08-31 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US11092890B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092889B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
CN110780536B (zh) * 2018-07-31 2023-05-16 三星Sdi株式会社 半导体抗蚀剂组合物及使用组合物形成图案的方法及系统
KR102307977B1 (ko) 2018-07-31 2021-09-30 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US10615037B2 (en) * 2018-08-17 2020-04-07 International Business Machines Corporation Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition
KR102726476B1 (ko) 2019-01-22 2024-11-07 삼성전자주식회사 마스크 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
JP7610518B2 (ja) * 2019-02-22 2025-01-08 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 改善された貯蔵寿命を有するハードマスク及び充填材料として有用な無機酸化物成分及びアルキニルオキシ置換スピンオン炭素成分を含むスピンオン組成物
US11609494B2 (en) * 2019-04-30 2023-03-21 Samsung Sdi Co., Ltd. Semiconductor photoresist composition and method of forming patterns using the composition
KR102626153B1 (ko) 2019-07-08 2024-01-16 메르크 파텐트 게엠베하 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법
CN114342043A (zh) 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
KR102446362B1 (ko) 2019-10-15 2022-09-21 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US12286572B2 (en) 2019-12-20 2025-04-29 Solventum Intellectual Properties Company Adhesive primers and articles including the same
KR102555497B1 (ko) * 2020-01-21 2023-07-12 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102573327B1 (ko) 2020-04-02 2023-08-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP7717721B2 (ja) * 2020-04-17 2025-08-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 炭素材料、金属有機化合物および溶媒を含んでなるスピンコーティング組成物、および基板の上方への金属酸化物膜の製造方法
KR102619719B1 (ko) 2020-05-12 2023-12-28 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
CN115735262A (zh) * 2020-09-25 2023-03-03 朗姆研究公司 稳健的可灰化硬掩模
US20220197141A1 (en) * 2020-12-17 2022-06-23 Rohm And Haas Electronic Materials Llc Photoresist underlayer compositions and patterning methods
KR102690557B1 (ko) 2020-12-18 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법
KR102598259B1 (ko) * 2020-12-18 2023-11-02 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US20220365427A1 (en) * 2021-04-30 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method for manufacturing a semiconductor device
JP2024068637A (ja) * 2022-11-08 2024-05-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024097388A (ja) * 2023-01-06 2024-07-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP7839127B2 (ja) * 2023-06-07 2026-04-01 信越化学工業株式会社 金属含有膜形成用組成物及びパターン形成方法
JP2025033566A (ja) * 2023-08-29 2025-03-13 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2025063613A (ja) 2023-10-04 2025-04-16 信越化学工業株式会社 金属含有膜形成用組成物、パターン形成方法
JP2025101957A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法
WO2025215127A1 (en) * 2024-04-12 2025-10-16 Merck Patent Gmbh Formulation of metal alkoxide as precursor of a metal oxide coating layer
CN120209011B (zh) * 2025-05-28 2025-09-16 浙江奥首材料科技有限公司 金属化合物、抗反射金属硬掩模组合物及制备方法与应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014176043A1 (en) 2013-04-24 2014-10-30 United Technologies Corporation Method for elimination of powder segregation during can filling
WO2014207142A1 (en) 2013-06-28 2014-12-31 AZ Electronic Materials (Luxembourg) S.à.r.l. Spin-on compositions of soluble metal oxide carboxylates and methods of their use

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2888367A (en) * 1958-02-14 1959-05-26 Hitemp Wires Inc Process for promoting adhesion to difficultly wettable polymer surface
US3014826A (en) * 1960-12-29 1961-12-26 Gen Electric Electrical core structures
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS6356529A (ja) 1986-08-27 1988-03-11 Nissan Chem Ind Ltd 新規チタノシロキサン重合体の製造法
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
JPH073211A (ja) * 1993-06-18 1995-01-06 Nippon Soda Co Ltd 表面処理剤
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US5879859A (en) 1997-07-16 1999-03-09 International Business Machines Corporation Strippable photoimageable compositions
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
IL133969A0 (en) 2000-01-10 2001-04-30 Thixo Ltd Thixotropic compositions containing unsaturated oils and food products containing the same
KR20030076228A (ko) 2000-06-21 2003-09-26 아사히 가라스 가부시키가이샤 레지스트 조성물
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
US20020155389A1 (en) 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
WO2002065212A1 (en) 2001-02-09 2002-08-22 Asahi Glass Company, Limited Resist composition
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP2003165841A (ja) * 2001-11-29 2003-06-10 Dow Corning Toray Silicone Co Ltd ポリオルガノメタロシロキサンおよびその製造方法
US6872506B2 (en) 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
JP2004277621A (ja) * 2003-03-18 2004-10-07 Sanyo Chem Ind Ltd ウレタン化反応用触媒及びポリウレタン樹脂の製造法
EP1493761A1 (en) 2003-07-02 2005-01-05 3M Innovative Properties Company Fluoropolymer of fluorinated short chain acrylates or methacrylates and oil- and water repellent compositions based thereon
JP4461901B2 (ja) * 2004-05-11 2010-05-12 Ｔｄｋ株式会社 ホログラム記録材料及びホログラム記録媒体
US7563549B2 (en) 2005-05-20 2009-07-21 Xerox Corporation Imaging member
EP1892089B1 (en) 2005-06-03 2019-05-29 Kuraray Co., Ltd. Gas barrier laminate, method for producing same and package body using same
JP4553835B2 (ja) 2005-12-14 2010-09-29 信越化学工業株式会社 反射防止膜材料、及びこれを用いたパターン形成方法、基板
US8168372B2 (en) 2006-09-25 2012-05-01 Brewer Science Inc. Method of creating photolithographic structures with developer-trimmed hard mask
US7416834B2 (en) 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
FR2916199B1 (fr) 2007-05-14 2012-10-19 Inst Francais Du Petrole Procede d'oligomerisation des olefines utilisant une composition catalytique comprenant un complexe organometallique contenant un ligand phenoxy fonctionnalise par un hetero-atome
KR20100080788A (ko) 2007-09-07 2010-07-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 표면 개질된 고굴절률 나노입자를 포함하는 자기-조립 반사방지 코팅
JP5101541B2 (ja) 2008-05-15 2012-12-19 信越化学工業株式会社 パターン形成方法
JP5503916B2 (ja) 2008-08-04 2014-05-28 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
WO2010047109A1 (ja) * 2008-10-23 2010-04-29 国立大学法人三重大学 ポリオルガノシロキサン組成物およびその硬化体
JP5894919B2 (ja) 2009-09-15 2016-03-30 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 光潜在性チタンキレート触媒
KR101749601B1 (ko) 2009-09-16 2017-06-21 닛산 가가쿠 고교 가부시키 가이샤 설폰아미드기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물
JP5721992B2 (ja) 2009-10-14 2015-05-20 富士フイルム株式会社 着色硬化性組成物、レジスト液、インクジェット用インク、カラーフィルタ、カラーフィルタの製造方法、固体撮像素子、液晶ディスプレイ、有機ｅｌディスプレイ、画像表示デバイス、及び色素化合物
JP2011173786A (ja) 2010-02-23 2011-09-08 Dow Global Technologies Llc セメントスラリーのためのレオロジー調整剤
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
JP2012237823A (ja) 2011-05-10 2012-12-06 Konica Minolta Business Technologies Inc 電子写真感光体、それを含むプロセスカートリッジおよび画像形成装置
US8568958B2 (en) * 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
US8795774B2 (en) * 2012-09-23 2014-08-05 Rohm And Haas Electronic Materials Llc Hardmask
US9315636B2 (en) * 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014176043A1 (en) 2013-04-24 2014-10-30 United Technologies Corporation Method for elimination of powder segregation during can filling
WO2014207142A1 (en) 2013-06-28 2014-12-31 AZ Electronic Materials (Luxembourg) S.à.r.l. Spin-on compositions of soluble metal oxide carboxylates and methods of their use

Also Published As

Publication number Publication date
US9499698B2 (en) 2016-11-22
WO2016128252A1 (en) 2016-08-18
JP6810696B2 (ja) 2021-01-06
JP2018507933A (ja) 2018-03-22
KR20170116134A (ko) 2017-10-18
SG11201705487QA (en) 2017-08-30
CN107251203A (zh) 2017-10-13
TW201639927A (zh) 2016-11-16
US20160230019A1 (en) 2016-08-11
EP3257069A1 (en) 2017-12-20
CN107251203B (zh) 2019-05-17
EP3257069B1 (en) 2018-11-21
TWI669353B (zh) 2019-08-21

Similar Documents

Publication Publication Date Title
KR102367238B1 (ko) 금속 하드마스크 조성물 및 반도체 기판 상에 미세 패턴을 형성하는 방법
JP7050137B2 (ja) ハードマスクおよび充填材料として安定な金属化合物、その組成物、およびその使用方法
EP3686672B1 (en) Process of coating a hard mask composition for pattern transfer into a silicon substrate
US7989144B2 (en) Antireflective coating composition
JP6122426B2 (ja) 下層組成物及びそれの方法
US8486609B2 (en) Antireflective coating composition and process thereof
KR100816735B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
US20070298349A1 (en) Antireflective Coating Compositions Comprising Siloxane Polymer
US20100316949A1 (en) Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
KR20170093113A (ko) 할로겐함유 카르본산아미드기를 가지는 가수분해성 실란을 포함하는 리소그래피용 레지스트 하층막 형성 조성물
KR20170107959A (ko) 카보네이트 골격을 가지는 가수분해성 실란을 포함하는 리소그래피용 레지스트 하층막 형성 조성물
WO2019048393A1 (en) AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY
KR100865684B1 (ko) 고 내에칭성 반사방지 하드마스크 조성물, 패턴화된 재료형상의　제조방법 및 그 제조방법으로 제조되는 반도체집적회로 디바이스
KR100836675B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000