KR102351345B1 - 오버레이 계측 데이터에 대한 확률적 행위의 영향 결정 - Google Patents

오버레이 계측 데이터에 대한 확률적 행위의 영향 결정 Download PDF

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KR102351345B1
KR102351345B1 KR1020197028612A KR20197028612A KR102351345B1 KR 102351345 B1 KR102351345 B1 KR 102351345B1 KR 1020197028612 A KR1020197028612 A KR 1020197028612A KR 20197028612 A KR20197028612 A KR 20197028612A KR 102351345 B1 KR102351345 B1 KR 102351345B1
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metrology
uncertainty
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KR20190115105A (ko
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에브게니 구레비치
마이클 이 아델
로엘 그론헤이드
요엘 펠러
블라디미르 레빈스키
다나 클레인
샤론 아하론
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H01L22/26—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H01L22/12—
    • H01L22/22—
    • H01L22/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020197028612A 2017-02-28 2018-02-27 오버레이 계측 데이터에 대한 확률적 행위의 영향 결정 Active KR102351345B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762464382P 2017-02-28 2017-02-28
US62/464,382 2017-02-28
US201762591104P 2017-11-27 2017-11-27
US62/591,104 2017-11-27
PCT/US2018/019793 WO2018160502A1 (en) 2017-02-28 2018-02-27 Determining the impacts of stochastic behavior on overlay metrology data

Publications (2)

Publication Number Publication Date
KR20190115105A KR20190115105A (ko) 2019-10-10
KR102351345B1 true KR102351345B1 (ko) 2022-01-13

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KR1020197028612A Active KR102351345B1 (ko) 2017-02-28 2018-02-27 오버레이 계측 데이터에 대한 확률적 행위의 영향 결정

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Country Link
US (1) US10901325B2 (https=)
JP (1) JP6960462B2 (https=)
KR (1) KR102351345B1 (https=)
CN (1) CN110383442B (https=)
SG (1) SG11201907074RA (https=)
TW (1) TWI735747B (https=)
WO (1) WO2018160502A1 (https=)

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US11355306B2 (en) 2017-04-13 2022-06-07 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10656532B2 (en) 2017-04-13 2020-05-19 Fractilia, Llc Edge detection system and its use for optical proximity correction
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US10488188B2 (en) 2017-04-13 2019-11-26 Fractilia, Llc System and method for removing noise from roughness measurements
US10648801B2 (en) 2017-04-13 2020-05-12 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10664955B2 (en) 2017-04-13 2020-05-26 Fractilia, Llc Edge detection system and its use for machine learning
US11508546B2 (en) 2017-04-13 2022-11-22 Fractilia, Llc System and method for low-noise edge detection and its use for process monitoring and control
US11361937B2 (en) 2017-04-13 2022-06-14 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
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JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US11333982B2 (en) 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
US11567413B2 (en) 2019-02-25 2023-01-31 Asml Netherlands B.V. Method for determining stochastic variation of printed patterns
US10990019B2 (en) * 2019-04-09 2021-04-27 Kla Corporation Stochastic reticle defect dispositioning
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WO2023039186A1 (en) * 2021-09-10 2023-03-16 Fractilia, Llc Detection of probabilistic process windows
US12444628B2 (en) 2022-06-24 2025-10-14 Kla Corporation Image modeling-assisted contour extraction
US12561790B2 (en) * 2023-09-26 2026-02-24 Kla Corporation Method to calibrate, predict, and control stochastic defects in EUV lithography
CN117311103B (zh) * 2023-10-31 2024-08-06 魅杰光电科技(上海)有限公司 套刻误差测量方法、装置、系统及存储介质
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JP6960462B2 (ja) 2021-11-05
JP2020511003A (ja) 2020-04-09
KR20190115105A (ko) 2019-10-10
CN110383442B (zh) 2023-10-10
US10901325B2 (en) 2021-01-26
TWI735747B (zh) 2021-08-11
WO2018160502A1 (en) 2018-09-07
US20190049858A1 (en) 2019-02-14
CN110383442A (zh) 2019-10-25
SG11201907074RA (en) 2019-09-27
TW201840954A (zh) 2018-11-16

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