KR102346145B1 - 분립체의 도포방법 - Google Patents

분립체의 도포방법 Download PDF

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KR102346145B1
KR102346145B1 KR1020167034978A KR20167034978A KR102346145B1 KR 102346145 B1 KR102346145 B1 KR 102346145B1 KR 1020167034978 A KR1020167034978 A KR 1020167034978A KR 20167034978 A KR20167034978 A KR 20167034978A KR 102346145 B1 KR102346145 B1 KR 102346145B1
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South Korea
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powder
granular material
substrate
coated
sucking
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KR20170072833A (ko
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마사후미 마츠나가
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엠테크스마트 가부시키가이샤
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B05D1/12—Applying particulate materials
    • H01L33/44—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H01L33/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H01L2933/0025—
    • H01L2933/0041—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
KR1020167034978A 2014-10-18 2014-12-02 분립체의 도포방법 Active KR102346145B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014213252A JP6481154B2 (ja) 2014-10-18 2014-10-18 粉粒体の塗布方法
JPJP-P-2014-213252 2014-10-18
PCT/JP2014/081877 WO2016059732A1 (ja) 2014-10-18 2014-12-02 粉粒体の塗布方法

Publications (2)

Publication Number Publication Date
KR20170072833A KR20170072833A (ko) 2017-06-27
KR102346145B1 true KR102346145B1 (ko) 2021-12-30

Family

ID=55746299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167034978A Active KR102346145B1 (ko) 2014-10-18 2014-12-02 분립체의 도포방법

Country Status (5)

Country Link
US (1) US10625297B2 (https=)
JP (1) JP6481154B2 (https=)
KR (1) KR102346145B1 (https=)
CN (2) CN111599979B (https=)
WO (1) WO2016059732A1 (https=)

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US11426760B2 (en) 2017-02-03 2022-08-30 Hitachi Zosen Corporation Powder film forming method and powder film forming device
JP2020129495A (ja) * 2019-02-08 2020-08-27 エムテックスマート株式会社 全固体電池の製造方法
JP2021087905A (ja) * 2019-12-02 2021-06-10 エムテックスマート株式会社 粉粒体の塗布または成膜方法
CN111668455A (zh) * 2020-05-22 2020-09-15 宜春清陶能源科技有限公司 降低电池极片表面涂覆浆料过程中气泡量的方法及其在固态电解质涂布的应用
JP2022007837A (ja) * 2020-06-27 2022-01-13 正文 松永 粒子の製造方法、粒子またはスラリーの塗布方法、２次電池または２次電池の製造方法、全固体電池または全固体電池の製造方法、ｌｅｄまたはｌｅｄの製造方法、蛍光体シートまたは蛍光体シートの製造方法
JP2024054597A (ja) * 2022-10-05 2024-04-17 エムテックスマート株式会社 粉体の塗布方法、二次電池の製造方法、全固体電池の製造方法、二次電池、全固体電池

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JP2006313829A (ja) 2005-05-09 2006-11-16 Konica Minolta Opto Inc 白色発光ダイオード及びその製造方法
JP2007050371A (ja) 2005-08-19 2007-03-01 Matsushita Electric Ind Co Ltd 標準粒子塗布装置及び標準粒子塗布方法
JP2009101285A (ja) 2007-10-23 2009-05-14 Nidec-Kyori Corp 液体塗布装置

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JP2006313829A (ja) 2005-05-09 2006-11-16 Konica Minolta Opto Inc 白色発光ダイオード及びその製造方法
JP2007050371A (ja) 2005-08-19 2007-03-01 Matsushita Electric Ind Co Ltd 標準粒子塗布装置及び標準粒子塗布方法
JP2009101285A (ja) 2007-10-23 2009-05-14 Nidec-Kyori Corp 液体塗布装置

Also Published As

Publication number Publication date
CN106660065A (zh) 2017-05-10
CN111599979A (zh) 2020-08-28
US10625297B2 (en) 2020-04-21
JP6481154B2 (ja) 2019-03-13
CN111599979B (zh) 2022-11-18
WO2016059732A1 (ja) 2016-04-21
US20170136492A1 (en) 2017-05-18
CN106660065B (zh) 2020-09-22
KR20170072833A (ko) 2017-06-27
JP2016077982A (ja) 2016-05-16

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