CN111599979B - 二次电池的电极形成方法 - Google Patents

二次电池的电极形成方法 Download PDF

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CN111599979B
CN111599979B CN202010442591.3A CN202010442591A CN111599979B CN 111599979 B CN111599979 B CN 111599979B CN 202010442591 A CN202010442591 A CN 202010442591A CN 111599979 B CN111599979 B CN 111599979B
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powder
coating
coated
secondary battery
granule
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CN111599979A (zh
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松永正文
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Mtek Smart Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B05D1/12—Applying particulate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
CN202010442591.3A 2014-10-18 2014-12-02 二次电池的电极形成方法 Active CN111599979B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014213252A JP6481154B2 (ja) 2014-10-18 2014-10-18 粉粒体の塗布方法
JP2014-213252 2014-10-18
PCT/JP2014/081877 WO2016059732A1 (ja) 2014-10-18 2014-12-02 粉粒体の塗布方法
CN201480080045.2A CN106660065B (zh) 2014-10-18 2014-12-02 粉粒体的涂布方法

Related Parent Applications (1)

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CN201480080045.2A Division CN106660065B (zh) 2014-10-18 2014-12-02 粉粒体的涂布方法

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CN111599979A CN111599979A (zh) 2020-08-28
CN111599979B true CN111599979B (zh) 2022-11-18

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CN201480080045.2A Active CN106660065B (zh) 2014-10-18 2014-12-02 粉粒体的涂布方法

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US (1) US10625297B2 (https=)
JP (1) JP6481154B2 (https=)
KR (1) KR102346145B1 (https=)
CN (2) CN111599979B (https=)
WO (1) WO2016059732A1 (https=)

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Publication number Priority date Publication date Assignee Title
US11426760B2 (en) 2017-02-03 2022-08-30 Hitachi Zosen Corporation Powder film forming method and powder film forming device
JP2020129495A (ja) * 2019-02-08 2020-08-27 エムテックスマート株式会社 全固体電池の製造方法
JP2021087905A (ja) * 2019-12-02 2021-06-10 エムテックスマート株式会社 粉粒体の塗布または成膜方法
CN111668455A (zh) * 2020-05-22 2020-09-15 宜春清陶能源科技有限公司 降低电池极片表面涂覆浆料过程中气泡量的方法及其在固态电解质涂布的应用
JP2022007837A (ja) * 2020-06-27 2022-01-13 正文 松永 粒子の製造方法、粒子またはスラリーの塗布方法、２次電池または２次電池の製造方法、全固体電池または全固体電池の製造方法、ｌｅｄまたはｌｅｄの製造方法、蛍光体シートまたは蛍光体シートの製造方法
JP2024054597A (ja) * 2022-10-05 2024-04-17 エムテックスマート株式会社 粉体の塗布方法、二次電池の製造方法、全固体電池の製造方法、二次電池、全固体電池

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CN87107803A (zh) * 1986-11-14 1988-07-27 艾尔坎国际有限公司 制造复合金属沉积物的喷涂方法
CN1273615A (zh) * 1998-06-10 2000-11-15 美国南诺考尔股份有限公司 用于热喷涂系统的活性物质原料,由其制得的能量储存和能量转换装置的热喷涂电极及其制造方法
CN1871085A (zh) * 2003-09-12 2006-11-29 独立行政法人产业技术综合研究所 能够以微细的液滴的形状喷射、层叠涂布的金属纳米粒子分散液
CN101015079A (zh) * 2004-06-10 2007-08-08 加利福尼亚技术学院 制造固体酸燃料电池膜电极组件的生产工艺
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CN101355168A (zh) * 2007-07-23 2009-01-28 丰田自动车株式会社 制造膜电极组件的方法
CN101728530A (zh) * 2008-11-03 2010-06-09 埃玛拉公司 具有正电极组合物的锂二次电池及其制造方法
CN103781861A (zh) * 2011-08-31 2014-05-07 住友化学株式会社 涂布液、层叠多孔膜及层叠多孔膜的制造方法
CN104010813A (zh) * 2011-12-13 2014-08-27 东丽株式会社 层叠体及带波长转换层的发光二极管的制造方法
CN104067362A (zh) * 2011-12-20 2014-09-24 应用材料公司 用于热涂布锂离子电池的电极的设备和方法

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CN87107803A (zh) * 1986-11-14 1988-07-27 艾尔坎国际有限公司 制造复合金属沉积物的喷涂方法
CN1273615A (zh) * 1998-06-10 2000-11-15 美国南诺考尔股份有限公司 用于热喷涂系统的活性物质原料,由其制得的能量储存和能量转换装置的热喷涂电极及其制造方法
CN1871085A (zh) * 2003-09-12 2006-11-29 独立行政法人产业技术综合研究所 能够以微细的液滴的形状喷射、层叠涂布的金属纳米粒子分散液
CN101015079A (zh) * 2004-06-10 2007-08-08 加利福尼亚技术学院 制造固体酸燃料电池膜电极组件的生产工艺
CN101263620A (zh) * 2005-09-13 2008-09-10 3M创新有限公司 多层纳米结构化薄膜
CN101355168A (zh) * 2007-07-23 2009-01-28 丰田自动车株式会社 制造膜电极组件的方法
CN101728530A (zh) * 2008-11-03 2010-06-09 埃玛拉公司 具有正电极组合物的锂二次电池及其制造方法
CN103781861A (zh) * 2011-08-31 2014-05-07 住友化学株式会社 涂布液、层叠多孔膜及层叠多孔膜的制造方法
CN104010813A (zh) * 2011-12-13 2014-08-27 东丽株式会社 层叠体及带波长转换层的发光二极管的制造方法
CN104067362A (zh) * 2011-12-20 2014-09-24 应用材料公司 用于热涂布锂离子电池的电极的设备和方法

Also Published As

Publication number Publication date
CN106660065A (zh) 2017-05-10
CN111599979A (zh) 2020-08-28
US10625297B2 (en) 2020-04-21
JP6481154B2 (ja) 2019-03-13
KR102346145B1 (ko) 2021-12-30
WO2016059732A1 (ja) 2016-04-21
US20170136492A1 (en) 2017-05-18
CN106660065B (zh) 2020-09-22
KR20170072833A (ko) 2017-06-27
JP2016077982A (ja) 2016-05-16

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