KR102340702B1 - 막 두께 신호 처리 장치, 연마 장치, 막 두께 신호 처리 방법 및 연마 방법 - Google Patents

막 두께 신호 처리 장치, 연마 장치, 막 두께 신호 처리 방법 및 연마 방법 Download PDF

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KR102340702B1
KR102340702B1 KR1020170077097A KR20170077097A KR102340702B1 KR 102340702 B1 KR102340702 B1 KR 102340702B1 KR 1020170077097 A KR1020170077097 A KR 1020170077097A KR 20170077097 A KR20170077097 A KR 20170077097A KR 102340702 B1 KR102340702 B1 KR 102340702B1
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film thickness
polishing
edge
sensor
data
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KR20180002506A (ko
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아키라 나카무라
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가부시키가이샤 에바라 세이사꾸쇼
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    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
    • H01L21/304—
    • H01L21/30625—
    • H01L21/67259—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020170077097A 2016-06-29 2017-06-19 막 두께 신호 처리 장치, 연마 장치, 막 두께 신호 처리 방법 및 연마 방법 Active KR102340702B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016128716A JP6795337B2 (ja) 2016-06-29 2016-06-29 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
JPJP-P-2016-128716 2016-06-29

Publications (2)

Publication Number Publication Date
KR20180002506A KR20180002506A (ko) 2018-01-08
KR102340702B1 true KR102340702B1 (ko) 2021-12-17

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KR1020170077097A Active KR102340702B1 (ko) 2016-06-29 2017-06-19 막 두께 신호 처리 장치, 연마 장치, 막 두께 신호 처리 방법 및 연마 방법

Country Status (5)

Country Link
US (1) US10569380B2 (https=)
JP (1) JP6795337B2 (https=)
KR (1) KR102340702B1 (https=)
CN (1) CN107538339B (https=)
TW (1) TWI723169B (https=)

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* Cited by examiner, † Cited by third party
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JP7019305B2 (ja) * 2017-04-26 2022-02-15 株式会社荏原製作所 渦電流センサのキャリブレーション方法
US20190299360A1 (en) * 2018-04-02 2019-10-03 Ebara Corporation Polishing apparatus and substrate processing apparatus
JP7050560B2 (ja) * 2018-04-18 2022-04-08 株式会社荏原製作所 研磨装置及び基板処理装置
JP7153490B2 (ja) * 2018-07-13 2022-10-14 株式会社荏原製作所 研磨装置およびキャリブレーション方法
JP7084811B2 (ja) * 2018-07-13 2022-06-15 株式会社荏原製作所 研磨装置および研磨方法
CN113767404A (zh) 2019-03-29 2021-12-07 圣戈班磨料磨具有限公司 高效研磨解决方案
JP7575309B2 (ja) * 2021-03-17 2024-10-29 株式会社荏原製作所 膜厚測定方法、ノッチ部の検出方法、および研磨装置
JP7667025B2 (ja) * 2021-08-06 2025-04-22 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法
CN117681117B (zh) * 2024-01-31 2024-05-17 华海清科(北京)科技有限公司 用于晶圆的金属薄膜厚度测量方法、装置、抛光设备和介质

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JP2005011977A (ja) 2003-06-18 2005-01-13 Ebara Corp 基板研磨装置および基板研磨方法
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
JP4163145B2 (ja) * 2004-04-30 2008-10-08 株式会社ルネサステクノロジ ウェハの研磨方法
US6949007B1 (en) * 2004-08-31 2005-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multi-stage process control in film removal
JP4790475B2 (ja) * 2006-04-05 2011-10-12 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚測定プログラム
JP2008277450A (ja) * 2007-04-26 2008-11-13 Tokyo Seimitsu Co Ltd Ｃｍｐ装置の研磨条件管理装置及び研磨条件管理方法
JP5080933B2 (ja) * 2007-10-18 2012-11-21 株式会社荏原製作所 研磨監視方法および研磨装置
KR101018644B1 (ko) * 2008-09-05 2011-03-03 에스엔유 프리시젼 주식회사 증착장치 및 이를 이용한 증착방법
CN102049732B (zh) * 2010-08-30 2012-05-23 清华大学 一种硅片边缘膜厚测量方法
JP5980476B2 (ja) * 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
JP6050571B2 (ja) * 2011-08-09 2016-12-21 株式会社荏原製作所 研磨監視方法および研磨装置
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KR102326730B1 (ko) * 2014-03-12 2021-11-17 가부시키가이샤 에바라 세이사꾸쇼 막 두께 측정값의 보정 방법, 막 두께 보정기 및 와전류 센서
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JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
KR101655074B1 (ko) * 2014-11-04 2016-09-07 주식회사 케이씨텍 화학 기계적 연마 장치 및 와전류 센서를 이용한 웨이퍼 도전층 두께 측정 방법
US10160089B2 (en) * 2015-10-01 2018-12-25 Ebara Corporation Polishing apparatus
KR102276869B1 (ko) * 2016-06-30 2021-07-14 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마 자동화된 레시피 생성

Also Published As

Publication number Publication date
TW201810410A (zh) 2018-03-16
TWI723169B (zh) 2021-04-01
CN107538339B (zh) 2021-02-26
JP6795337B2 (ja) 2020-12-02
JP2018001310A (ja) 2018-01-11
US10569380B2 (en) 2020-02-25
CN107538339A (zh) 2018-01-05
KR20180002506A (ko) 2018-01-08
US20180001437A1 (en) 2018-01-04

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