JP2018001310A - 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 - Google Patents
膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
- G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
Mechanical Polishing))が知られている。CMPを行うための研磨装置は、研磨パッドが貼り付けられた研磨テーブルと、研磨対象物(例えば半導体ウェハなどの基板、又は基板の表面に形成された各種の膜)を保持するためのトップリングとを備えている。研磨装置は、研磨テーブルを回転させながら、トップリングに保持された研磨対象物を研磨パッドに押圧することによって研磨対象物を研磨する。
装置、という構成を採っている。
0の回転に伴い研磨対象物102の膜厚を研磨面に沿って検出する渦電流センサ210を備える。また、研磨装置100は、研磨テーブル110に配置された近接センサ222と、研磨テーブル110の外側に配置されたドグ224とを含むトリガセンサ220を備える。
量と考えられるからである。
i),F(i+1)は、
F(i)={(f(i−1)−f(i))}
F(i+1)={(f(i)−f(i+1))}
と表される。このようにして得られた研磨対象物102上の各点におけるエッジ検出用波形(F(i))に現れるピークの位置を、膜厚データのエッジの位置とする。この計算は、膜厚データの微分を求めていることに相当する。なお、本実施形態では、隣接する複数点の膜厚の差分を乗算することによってエッジ検出用波形を生成する例を示すが、これに限らず、sobelフィルタなど他の演算を行うこともできる。
効量36bの和が100%である。
損失量34a + 有効量34b = 損失量36a + 有効量36b = 100%
損失量34a = 有効量36b
有効量34b = 損失量36a
14…渦電流
26…エッジ
42…ピーク位置
72…励磁コイル
73…検出コイル
74…バランスコイル
100…研磨装置
102…研磨対象物
108…研磨パッド
110…研磨テーブル
140…研磨装置制御部
210…渦電流センサ
230…膜厚信号処理装置
232…受信部
234…推定部
238…補正部
240…終点検出器
Claims (6)
- 研磨対象物の膜厚を検出するための膜厚センサから出力されたセンサデータを受信して、膜厚データを生成する受信部と、
前記受信部によって生成された膜厚データに基づいて、前記研磨対象物のエッジより内側における前記膜厚データの補正を行う補正部と、を備え、
前記補正部は、前記研磨対象物の前記エッジより外側において前記受信部によって生成された前記膜厚データを用いて、前記研磨対象物のエッジより内側において前記受信部によって生成された前記膜厚データを補正することを特徴とする膜厚信号処理装置。 - 請求項1の膜厚信号処理装置において、
前記受信部によって生成された膜厚データに基づいて、前記研磨対象物の前記エッジの位置を推定する推定部を有し、前記補正部は、推定された前記エッジの位置を用いて、前記膜厚データの補正を行うことを特徴とする膜厚信号処理装置。 - 請求項1または2の膜厚信号処理装置において、
前記補正部は、前記エッジから外側へ第1の距離にある位置において前記受信部によって生成された前記膜厚データを、前記エッジから内側へ第2の距離にある位置において前記受信部によって生成された前記膜厚データに加算することにより、前記補正を行い、前記第1の距離と前記第2の距離は等しいことを特徴とする膜厚信号処理装置。 - 研磨対象物を研磨するための研磨パッドが貼り付け可能な研磨テーブルと、
前記研磨テーブルを回転駆動できる駆動部と、
前記研磨対象物を保持して前記研磨パッドに押圧可能な保持部と、
前記研磨テーブルに形成された穴に配置され、前記研磨テーブルの回転に伴い前記研磨対象物の膜厚を検出可能な膜厚センサと、
請求項1〜3のいずれか1項の膜厚信号処理装置と、
を備える研磨装置。 - 研磨対象物の膜厚を検出するための膜厚センサから出力されたセンサデータを受信して、膜厚データを生成し、
前記生成された膜厚データに基づいて、前記研磨対象物のエッジより内側における前記膜厚データの補正を行い、
前記補正を行うときは、前記研磨対象物の前記エッジより外側において、前記生成された膜厚データを用いて、前記研磨対象物のエッジより内側において前記生成された膜厚データを補正することを特徴とする膜厚信号処理方法。 - 研磨対象物の膜厚を検出するための膜厚センサから出力された膜厚データを受信して、膜厚データを生成し、
前記生成された膜厚データに基づいて、前記研磨対象物のエッジより内側における前記膜厚データの補正を行い、
前記補正された膜厚データに基づいて、前記研磨対象物の押圧力を制御し、
前記補正を行うときは、前記研磨対象物の前記エッジより外側において前記生成された膜厚データを用いて、前記研磨対象物のエッジより内側において前記生成された膜厚データを補正することを特徴とする研磨方法。
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JP2016128716A JP6795337B2 (ja) | 2016-06-29 | 2016-06-29 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
TW106117636A TWI723169B (zh) | 2016-06-29 | 2017-05-26 | 膜厚信號處理裝置、研磨裝置、膜厚信號處理方法、及研磨方法 |
KR1020170077097A KR102340702B1 (ko) | 2016-06-29 | 2017-06-19 | 막 두께 신호 처리 장치, 연마 장치, 막 두께 신호 처리 방법 및 연마 방법 |
US15/633,546 US10569380B2 (en) | 2016-06-29 | 2017-06-26 | Film thickness signal processing apparatus, and polishing apparatus |
CN201710509057.8A CN107538339B (zh) | 2016-06-29 | 2017-06-28 | 膜厚信号处理装置、研磨装置、膜厚信号处理方法及研磨方法 |
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JP2019188480A (ja) * | 2018-04-18 | 2019-10-31 | 株式会社荏原製作所 | 研磨装置及び基板処理装置 |
CN110712118A (zh) * | 2018-07-13 | 2020-01-21 | 株式会社荏原制作所 | 研磨装置及研磨方法 |
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JP7019305B2 (ja) * | 2017-04-26 | 2022-02-15 | 株式会社荏原製作所 | 渦電流センサのキャリブレーション方法 |
US20190299360A1 (en) * | 2018-04-02 | 2019-10-03 | Ebara Corporation | Polishing apparatus and substrate processing apparatus |
JP7153490B2 (ja) * | 2018-07-13 | 2022-10-14 | 株式会社荏原製作所 | 研磨装置およびキャリブレーション方法 |
JP2022143015A (ja) * | 2021-03-17 | 2022-10-03 | 株式会社荏原製作所 | 膜厚測定方法、ノッチ部の検出方法、および研磨装置 |
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US10569380B2 (en) | 2020-02-25 |
JP6795337B2 (ja) | 2020-12-02 |
TW201810410A (zh) | 2018-03-16 |
KR20180002506A (ko) | 2018-01-08 |
CN107538339A (zh) | 2018-01-05 |
TWI723169B (zh) | 2021-04-01 |
CN107538339B (zh) | 2021-02-26 |
KR102340702B1 (ko) | 2021-12-17 |
US20180001437A1 (en) | 2018-01-04 |
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