KR102325158B1 - 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 - Google Patents

반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 Download PDF

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KR102325158B1
KR102325158B1 KR1020150010831A KR20150010831A KR102325158B1 KR 102325158 B1 KR102325158 B1 KR 102325158B1 KR 1020150010831 A KR1020150010831 A KR 1020150010831A KR 20150010831 A KR20150010831 A KR 20150010831A KR 102325158 B1 KR102325158 B1 KR 102325158B1
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film
transistor
oxide
semiconductor
insulating film
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KR20150091003A (ko
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히데카즈 미야이리
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/786—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020150010831A 2014-01-30 2015-01-22 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 Active KR102325158B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-015495 2014-01-30
JP2014015495 2014-01-30

Publications (2)

Publication Number Publication Date
KR20150091003A KR20150091003A (ko) 2015-08-07
KR102325158B1 true KR102325158B1 (ko) 2021-11-10

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Country Status (4)

Country Link
US (1) US20150214256A1 (enExample)
JP (3) JP6526427B2 (enExample)
KR (1) KR102325158B1 (enExample)
TW (1) TWI662653B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015060133A1 (en) * 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015182000A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI732383B (zh) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
TW202316486A (zh) 2015-03-30 2023-04-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
WO2017081579A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6917700B2 (ja) 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
WO2017103737A1 (en) 2015-12-18 2017-06-22 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processing device, and method for manufacturing display panel
JP6853663B2 (ja) * 2015-12-28 2021-03-31 株式会社半導体エネルギー研究所 半導体装置
KR102628719B1 (ko) * 2016-02-12 2024-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102626961B1 (ko) * 2016-07-27 2024-01-17 엘지디스플레이 주식회사 하이브리드 타입의 박막 트랜지스터 및 이를 이용한 유기발광 표시장치
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102702938B1 (ko) 2016-11-30 2024-09-03 엘지디스플레이 주식회사 멀티 타입의 박막 트랜지스터를 포함하는 유기발광 표시장치
EP3688813A4 (en) * 2017-09-28 2021-06-23 INTEL Corporation MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR OVER A COMPLEMENTARY TRANSISTOR
US10381315B2 (en) * 2017-11-16 2019-08-13 Samsung Electronics Co., Ltd. Method and system for providing a reverse-engineering resistant hardware embedded security module
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
DE102019112120B4 (de) * 2018-09-28 2025-05-22 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zur herstellung eines halbleiter-bauelements und halbleiter-bauelement
US11189490B2 (en) 2018-09-28 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US12453187B2 (en) * 2018-10-26 2025-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI690060B (zh) 2019-04-25 2020-04-01 元太科技工業股份有限公司 記憶體結構及其製造方法
KR102715249B1 (ko) * 2019-12-31 2024-10-10 엘지디스플레이 주식회사 디스플레이 장치
US11929436B2 (en) * 2021-02-02 2024-03-12 Taiwan Semiconductor Manufacturing Company Limited Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same
WO2026014158A1 (ja) * 2024-07-08 2026-01-15 ソニーセミコンダクタソリューションズ株式会社 表示装置、表示装置の製造方法及び電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028731A (ja) 2010-06-22 2012-02-09 Renesas Electronics Corp 半導体装置、及び、半導体装置の製造方法
JP2012257210A (ja) 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013236068A (ja) * 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2013236072A (ja) 2012-04-13 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
KR102450889B1 (ko) * 2009-12-04 2022-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN04871A (enExample) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
JP5727892B2 (ja) * 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
TWI525619B (zh) * 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
JP5892852B2 (ja) * 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5826716B2 (ja) * 2012-06-19 2015-12-02 株式会社東芝 半導体装置及びその製造方法
US9564604B2 (en) * 2012-10-18 2017-02-07 Nippon Kayaku Kabushiki Kaisha Fused polycyclic aromatic compounds, organic semiconductor material and thin film including the same, and method for producing an organic semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028731A (ja) 2010-06-22 2012-02-09 Renesas Electronics Corp 半導体装置、及び、半導体装置の製造方法
JP2012257210A (ja) 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013236068A (ja) * 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2013236072A (ja) 2012-04-13 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置

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JP7054410B2 (ja) 2022-04-13
JP2021052213A (ja) 2021-04-01
JP2019125812A (ja) 2019-07-25
TW201532197A (zh) 2015-08-16
KR20150091003A (ko) 2015-08-07
US20150214256A1 (en) 2015-07-30
JP6526427B2 (ja) 2019-06-05
TWI662653B (zh) 2019-06-11
JP2015164181A (ja) 2015-09-10

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