KR102324679B1 - 금속 산화물을 함유하는 재료, 이것의 제조 방법 및 이것의 사용 방법 - Google Patents

금속 산화물을 함유하는 재료, 이것의 제조 방법 및 이것의 사용 방법 Download PDF

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KR102324679B1
KR102324679B1 KR1020187012509A KR20187012509A KR102324679B1 KR 102324679 B1 KR102324679 B1 KR 102324679B1 KR 1020187012509 A KR1020187012509 A KR 1020187012509A KR 20187012509 A KR20187012509 A KR 20187012509A KR 102324679 B1 KR102324679 B1 KR 102324679B1
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composition
group
combinations
solvent
metal salt
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KR20180094850A (ko
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후이롱 야오
엠 다릴 라만
더글러스 맥켄지
준연 조
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리지필드 액퀴지션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/006—Anti-reflective coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/48—Stabilisers against degradation by oxygen, light or heat
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020187012509A 2015-12-22 2016-12-20 금속 산화물을 함유하는 재료, 이것의 제조 방법 및 이것의 사용 방법 Active KR102324679B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/978,232 2015-12-22
US14/978,232 US10241409B2 (en) 2015-12-22 2015-12-22 Materials containing metal oxides, processes for making same, and processes for using same
PCT/EP2016/081970 WO2017108822A1 (en) 2015-12-22 2016-12-20 Materials containing metal oxides, processes for making same, and processes for using same

Publications (2)

Publication Number Publication Date
KR20180094850A KR20180094850A (ko) 2018-08-24
KR102324679B1 true KR102324679B1 (ko) 2021-11-10

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KR1020187012509A Active KR102324679B1 (ko) 2015-12-22 2016-12-20 금속 산화물을 함유하는 재료, 이것의 제조 방법 및 이것의 사용 방법

Country Status (8)

Country Link
US (1) US10241409B2 (https=)
EP (1) EP3394675B1 (https=)
JP (1) JP6838063B2 (https=)
KR (1) KR102324679B1 (https=)
CN (1) CN108139673B (https=)
IL (1) IL257619A (https=)
TW (1) TWI689555B (https=)
WO (1) WO2017108822A1 (https=)

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* Cited by examiner, † Cited by third party
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EP3360933A1 (de) * 2017-02-08 2018-08-15 Evonik Degussa GmbH Direkt-strukturierbare formulierungen auf der basis von metalloxid-prekursoren zur herstellung oxidischer schichten
US20210109451A1 (en) * 2019-10-11 2021-04-15 Merck Patent Gmbh Spin-on metal oxide materials of high etch resistance useful in image reversal technique and related semiconductor manufacturing processes
WO2024128013A1 (ja) * 2022-12-16 2024-06-20 Jsr株式会社 レジスト下層膜形成用組成物、半導体基板の製造方法、レジスト下層膜の形成方法及び金属化合物の製造方法
WO2025178071A1 (ja) * 2024-02-21 2025-08-28 株式会社巴川コーポレーション ドライエッチングマスク用組成物
WO2025263501A1 (ja) * 2024-06-19 2025-12-26 Jsr株式会社 半導体基板の製造方法及び膜形成用組成物

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WO2014207142A1 (en) * 2013-06-28 2014-12-31 AZ Electronic Materials (Luxembourg) S.à.r.l. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
JP2015028931A (ja) * 2013-07-04 2015-02-12 国立大学法人京都大学 銅系ナノ粒子分散液とその製造方法及びその分散液から製造される銅導体膜が形成された基材

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US20030059684A1 (en) * 2001-09-26 2003-03-27 Kabushiki Kaisha Toshiba Nonaqueous electrolyte battery and nonaqueous electrolytic solution
WO2014207142A1 (en) * 2013-06-28 2014-12-31 AZ Electronic Materials (Luxembourg) S.à.r.l. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
JP2015028931A (ja) * 2013-07-04 2015-02-12 国立大学法人京都大学 銅系ナノ粒子分散液とその製造方法及びその分散液から製造される銅導体膜が形成された基材

Also Published As

Publication number Publication date
IL257619A (en) 2018-06-28
TW201739847A (zh) 2017-11-16
TWI689555B (zh) 2020-04-01
EP3394675A1 (en) 2018-10-31
EP3394675B1 (en) 2020-01-29
US10241409B2 (en) 2019-03-26
CN108139673A (zh) 2018-06-08
JP6838063B2 (ja) 2021-03-03
WO2017108822A1 (en) 2017-06-29
US20170176860A1 (en) 2017-06-22
KR20180094850A (ko) 2018-08-24
JP2019508509A (ja) 2019-03-28
CN108139673B (zh) 2021-06-15

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