KR102323289B1 - 인광체 변환기를 갖는 비접착식 발광 디바이스 - Google Patents

인광체 변환기를 갖는 비접착식 발광 디바이스 Download PDF

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KR102323289B1
KR102323289B1 KR1020167021557A KR20167021557A KR102323289B1 KR 102323289 B1 KR102323289 B1 KR 102323289B1 KR 1020167021557 A KR1020167021557 A KR 1020167021557A KR 20167021557 A KR20167021557 A KR 20167021557A KR 102323289 B1 KR102323289 B1 KR 102323289B1
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light emitting
wavelength conversion
emitting element
transparent substrate
film
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KR20160106152A (ko
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그리고리 바신
폴 마틴
한 호 최
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루미리즈 홀딩 비.브이.
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    • H01L33/505—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H01L33/005—
    • H01L33/44—
    • H01L33/501—
    • H01L33/58—
    • H01L33/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H01L2924/12041—
    • H01L2933/0041—
    • H01L2933/0058—

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KR1020167021557A 2014-01-07 2014-12-30 인광체 변환기를 갖는 비접착식 발광 디바이스 Active KR102323289B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461924283P 2014-01-07 2014-01-07
US61/924,283 2014-01-07
PCT/IB2014/067412 WO2015104623A1 (en) 2014-01-07 2014-12-30 Glueless light emitting device with phosphor converter

Publications (2)

Publication Number Publication Date
KR20160106152A KR20160106152A (ko) 2016-09-09
KR102323289B1 true KR102323289B1 (ko) 2021-11-08

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Country Link
US (1) US11024781B2 (enExample)
EP (1) EP3092666B1 (enExample)
JP (1) JP6709159B2 (enExample)
KR (1) KR102323289B1 (enExample)
CN (2) CN110010746A (enExample)
TW (1) TWI724985B (enExample)
WO (1) WO2015104623A1 (enExample)

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JP6304297B2 (ja) * 2016-04-06 2018-04-04 日亜化学工業株式会社 発光装置の製造方法
CN109791968A (zh) 2016-07-26 2019-05-21 克利公司 发光二极管、组件和相关方法
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JP6798279B2 (ja) * 2016-11-28 2020-12-09 豊田合成株式会社 発光装置の製造方法
JP2018155968A (ja) 2017-03-17 2018-10-04 日亜化学工業株式会社 透光性部材の製造方法及び発光装置の製造方法
JP6471764B2 (ja) * 2017-03-31 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
KR101877237B1 (ko) * 2017-05-23 2018-08-09 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
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JP6677232B2 (ja) * 2017-09-29 2020-04-08 日亜化学工業株式会社 発光装置の製造方法
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US11121298B2 (en) 2018-05-25 2021-09-14 Creeled, Inc. Light-emitting diode packages with individually controllable light-emitting diode chips
DE102018119323A1 (de) * 2018-08-08 2020-02-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Konversionselementen, Konversionselemente, Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauteils und lichtemittierendes Halbleiterbauteil
USD902448S1 (en) 2018-08-31 2020-11-17 Cree, Inc. Light emitting diode package
US11335833B2 (en) * 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11233183B2 (en) * 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
DE102018127521B4 (de) * 2018-11-05 2026-03-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US10910433B2 (en) 2018-12-31 2021-02-02 Lumileds Llc Pixelated LED array with optical elements
US11101411B2 (en) * 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
KR102625710B1 (ko) * 2021-09-24 2024-01-16 주식회사 루츠 형광체의 제조방법
CN114551495B (zh) * 2022-03-01 2026-02-10 镭昱光电科技(苏州)有限公司 显示器件及其制备方法
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
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JP2006128710A (ja) 2004-10-28 2006-05-18 Lumileds Lighting Us Llc パッケージ統合された薄膜ｌｅｄ
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Also Published As

Publication number Publication date
TWI724985B (zh) 2021-04-21
KR20160106152A (ko) 2016-09-09
CN110010746A (zh) 2019-07-12
EP3092666B1 (en) 2019-08-28
EP3092666A1 (en) 2016-11-16
US20170301832A1 (en) 2017-10-19
WO2015104623A1 (en) 2015-07-16
TW201539801A (zh) 2015-10-16
US11024781B2 (en) 2021-06-01
CN105874617A (zh) 2016-08-17
JP6709159B2 (ja) 2020-06-10
JP2017501589A (ja) 2017-01-12

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