KR102317067B1 - 스폿 주사 웨이퍼 검사 시스템의 런타임 정렬 시스템 및 방법 - Google Patents

스폿 주사 웨이퍼 검사 시스템의 런타임 정렬 시스템 및 방법 Download PDF

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KR102317067B1
KR102317067B1 KR1020177032833A KR20177032833A KR102317067B1 KR 102317067 B1 KR102317067 B1 KR 102317067B1 KR 1020177032833 A KR1020177032833 A KR 1020177032833A KR 20177032833 A KR20177032833 A KR 20177032833A KR 102317067 B1 KR102317067 B1 KR 102317067B1
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sample
sampling grid
drive signal
scan
sampling
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KR20170137181A (ko
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제이미 설리반
웬지안 카이
카이 카오
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/0095—Relay lenses or rod lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8896—Circuits specially adapted for system specific signal conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/106—Acousto-optical scan
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Optics & Photonics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Microscoopes, Condenser (AREA)
  • Nonlinear Science (AREA)
KR1020177032833A 2015-04-21 2016-04-20 스폿 주사 웨이퍼 검사 시스템의 런타임 정렬 시스템 및 방법 Active KR102317067B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562150295P 2015-04-21 2015-04-21
US62/150,295 2015-04-21
US15/004,331 2016-01-22
US15/004,331 US9864173B2 (en) 2015-04-21 2016-01-22 Systems and methods for run-time alignment of a spot scanning wafer inspection system
PCT/US2016/028400 WO2016172184A1 (en) 2015-04-21 2016-04-20 Systems and methods for run-time alignment of a spot scanning wafer inspection system

Publications (2)

Publication Number Publication Date
KR20170137181A KR20170137181A (ko) 2017-12-12
KR102317067B1 true KR102317067B1 (ko) 2021-10-22

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US (1) US9864173B2 (enExample)
EP (1) EP3286780B1 (enExample)
JP (1) JP6550470B2 (enExample)
KR (1) KR102317067B1 (enExample)
CN (1) CN107466366B (enExample)
IL (1) IL254832B (enExample)
TW (1) TWI676022B (enExample)
WO (1) WO2016172184A1 (enExample)

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US10794840B2 (en) 2017-03-17 2020-10-06 Intel Corporation Apparatus for semiconductor package inspection
WO2019238553A1 (en) 2018-06-12 2019-12-19 Asml Netherlands B.V. System and method for scanning a sample using multi-beam inspection apparatus
FR3084768B1 (fr) 2018-07-31 2020-10-16 Commissariat Energie Atomique Procede d'analyse d'au moins un type de defauts parmi une pluralite de types de defauts entre au moins deux echantillons et dispositif associe
US10957571B2 (en) * 2018-08-30 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for determining wafer characters
US10923317B2 (en) * 2018-09-19 2021-02-16 KLA Corp. Detecting defects in a logic region on a wafer
US11933717B2 (en) * 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
US11127136B2 (en) * 2019-12-05 2021-09-21 Kla Corporation System and method for defining flexible regions on a sample during inspection
US11187679B1 (en) * 2020-05-20 2021-11-30 The Boeing Company Beam steering for laser ultrasonic inspection systems
EP3933499A1 (en) * 2020-07-03 2022-01-05 Mycronic Ab Device and method for controlling focus of a laser beam
US11748872B2 (en) * 2020-08-31 2023-09-05 KLA Corp. Setting up inspection of a specimen
CN112820682B (zh) * 2021-01-08 2024-06-21 杭州长川科技股份有限公司 晶圆输送机构及晶圆测试设备
CN117012683B (zh) * 2023-10-07 2023-12-22 深圳黑晶光电技术有限公司 一种太阳能电池偏移纠正方法
CN117388274B (zh) * 2023-10-24 2024-05-24 上海感图网络科技有限公司 多自由度相机检测载台
CN119804244B (zh) * 2024-11-20 2025-11-21 苏州镁伽科技有限公司 晶圆测量方法、装置、电子设备和存储介质

Citations (4)

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US5864394A (en) 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
US6141038A (en) 1995-10-02 2000-10-31 Kla Instruments Corporation Alignment correction prior to image sampling in inspection systems
US20090058437A1 (en) 2006-03-24 2009-03-05 Toshifumi Honda Method and apparatus for reviewing defects by detecting images having voltage contrast
US20110280469A1 (en) 2010-05-17 2011-11-17 Jeong Ho Lee Run-Time Correction Of Defect Locations During Defect Review

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US3851951A (en) * 1974-01-16 1974-12-03 Isomet Corp High resolution laser beam recorder with self-focusing acousto-optic scanner
US4926489A (en) * 1983-03-11 1990-05-15 Kla Instruments Corporation Reticle inspection system
US4805123B1 (en) * 1986-07-14 1998-10-13 Kla Instr Corp Automatic photomask and reticle inspection method and apparatus including improved defect detector and alignment sub-systems
US5825482A (en) * 1995-09-29 1998-10-20 Kla-Tencor Corporation Surface inspection system with misregistration error correction and adaptive illumination
US6236454B1 (en) * 1997-12-15 2001-05-22 Applied Materials, Inc. Multiple beam scanner for an inspection system
ATE535834T1 (de) 2001-05-03 2011-12-15 Kla Tencor Tech Corp Systeme und verfahren zum scannen einer probe mit einem lichtstrahl
US6755051B2 (en) 2002-10-07 2004-06-29 Delta Galil Industries, Ltd. Knitted garments and methods of fabrication thereof
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JP2009071136A (ja) 2007-09-14 2009-04-02 Hitachi High-Technologies Corp データ管理装置、検査システムおよび欠陥レビュー装置
CN101840025B (zh) * 2010-05-05 2011-11-09 北京大学 一种线性光子晶体器件
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
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US5864394A (en) 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
US6141038A (en) 1995-10-02 2000-10-31 Kla Instruments Corporation Alignment correction prior to image sampling in inspection systems
US20080304734A1 (en) 1995-10-02 2008-12-11 Kla Instruments Corporation Alignment correction prio to image sampling in inspection systems
US20090058437A1 (en) 2006-03-24 2009-03-05 Toshifumi Honda Method and apparatus for reviewing defects by detecting images having voltage contrast
US20110280469A1 (en) 2010-05-17 2011-11-17 Jeong Ho Lee Run-Time Correction Of Defect Locations During Defect Review

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EP3286780A4 (en) 2018-09-26
EP3286780B1 (en) 2024-07-31
US20160313256A1 (en) 2016-10-27
TW201704736A (zh) 2017-02-01
KR20170137181A (ko) 2017-12-12
JP2018516367A (ja) 2018-06-21
US9864173B2 (en) 2018-01-09
CN107466366B (zh) 2019-09-10
TWI676022B (zh) 2019-11-01
CN107466366A (zh) 2017-12-12
IL254832A0 (en) 2017-12-31
WO2016172184A1 (en) 2016-10-27
IL254832B (en) 2021-04-29
EP3286780A1 (en) 2018-02-28
JP6550470B2 (ja) 2019-07-24

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